Datasheet

AOT424
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOT424 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use as
a low side switch in CPU core power conversion.
Standard Product AOT424 is Pb-free (meets ROHS
& Sony 259 specifications).
VDS (V) = 30V
ID = 110A (VGS = 10V)
RDS(ON) < 4mΩ (VGS = 10V)
RDS(ON) < 5.5mΩ (VGS = 4.5V)
TO-220
D
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current B,G
G
TC=100°C
C
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation
B
Junction and Storage Temperature Range
Maximum Junction-to-Case
C
±20
V
ID
88
IDM
200
IAR
30
A
EAR
112
mJ
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
50
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
100
PD
TC=100°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
110
B
Pulsed Drain Current
Avalanche Current
Maximum
30
RθJA
RθJC
Typ
14.2
39
0.8
°C
Max
20
50
1.5
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
TJ=55°C
5
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
On state drain current
VGS=10V, VDS=5V
110
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
VGS=10V, ID=30A
Reverse Transfer Capacitance
Rg
Gate resistance
nA
3
V
A
3
4
6
VGS=4.5V, ID=30A
4.3
5.5
VDS=5V, ID=30A
106
IS=1A,VGS=0V
0.72
3700
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=30A
Gate Source Charge
mΩ
mΩ
S
1
V
85
A
4400
pF
700
pF
390
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
2
µA
100
4.7
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Units
V
1
ID(ON)
Coss
Max
30
VDS=24V, VGS=0V
IDSS
Crss
Typ
pF
0.54
0.7
Ω
59.6
72
nC
30.4
37
nC
9.5
nC
Qgd
Gate Drain Charge
19.8
nC
tD(on)
Turn-On DelayTime
12.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=30A, dI/dt=100A/µs
35.3
Qrr
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
30.7
VGS=10V, VDS=15V, RL=0.5Ω,
RGEN=3Ω
35.5
ns
40
ns
32.5
Body Diode Reverse Recovery Time
ns
42
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
2
F. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev4: July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
VDS=5V
50
50
4.0V
40
ID(A)
ID (A)
40
30
3.5V
125°C
30
25°C
20
20
10
10
VGS=3V
0
0
0
1
2
3
4
1.5
5
2
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
5
1.8
Normalized On-Resistance
VGS=4.5V
RDS(ON) (mΩ )
2.5
4
3
VGS=10V
2
VGS=10V
ID=30A
1.6
1.4
VGS=4.5V
ID=30A
1.2
1
0.8
0
10
20
30
40
50
60
0
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
10
1.0E+02
ID=30A
1.0E+01
125°C
8
125°C
6
IS (A)
RDS(ON) (mΩ )
1.0E+00
4
25°C
1.0E-01
25°C
1.0E-02
1.0E-03
2
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
VDS=15V
ID=30A
4000
Capacitance (pF)
VGS (Volts)
8
Ciss
6
4
3000
2000
Coss
2
1000
0
0
Crss
0
10
20
30
40
50
60
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
TJ(Max)=175°C
TC=25°C
900
10.0
1m
DC
1.0
10ms
0.1s
RDS(ON)
limited
0.1
700
600
500
400
300
200
100
TJ(Max)=175°C
TC=25°C
0.0
0.01
800
Power (W)
10µs
10µs
100µ
100.0
ID (Amps)
10
1000
1000.0
0.1
5
0
0.0001 0.001
1
VDS (Volts)
10
100
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse
1
PD
0.1
0.01
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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