Datasheet

AOT428
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOT428 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard Product AOT428 is Pb-free (meets ROHS &
Sony 259 specifications). AOT428L is a Green
Product ordering option. AOT428 and AOT428L are
electrically identical.
VDS (V) = 75V
ID = 80A (VGS = 10V)
RDS(ON) < 11 mΩ (VGS = 10V)
TO-220
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
C
C
Repetitive avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation B
Junction and Storage Temperature Range
V
A
300
IAR
60
A
EAR
180
mJ
57
115
W
58
TJ, TSTG
Thermal Characteristics
Parameter
Alpha & Omega Semiconductor, Ltd.
±30
ID
IDM
PD
TC=100°C
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Units
V
80
TC=100°C
Pulsed Drain Current
Avalanche Current
Maximum
75
°C
-55 to 175
Steady-State
Symbol
RθJA
Steady-State
RθJC
Typ
Max
Units
60
0.7
75
1.3
°C/W
°C/W
AOT428
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
ID=250uA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±30V
Gate Threshold Voltage
VDS=VGS, ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
0.02
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
5
2
TJ=125°C
VDS=5V, ID=30A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
1
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=30A
Units
µA
100
nA
3.4
4.5
V
9.1
11
15.5
20
200
VGS=10V, ID=30A
RDS(ON)
Max
V
TJ=55°C
IGSS
Crss
Typ
75
VDS=60V, VGS=0V
VGS(th)
IS
Min
A
100
0.7
mΩ
S
1
V
55
A
3790
4900
pF
321
420
pF
222
290
pF
1.25
1.5
Ω
65
85
nC
23
30
nC
Qgd
Gate Drain Charge
23.5
31
nC
tD(on)
Turn-On DelayTime
20
26
ns
tr
Turn-On Rise Time
48
63
ns
tD(off)
Turn-Off DelayTime
30
40
ns
tf
Turn-Off Fall Time
10
13
ns
trr
Body Diode Reverse Recovery Time
IF=30A, dI/dt=100A/µs
43
Qrr
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
88
56
114
ns
nC
VGS=10V, VDS=30V, RL=1Ω,
RGEN=3Ω
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
11
Rev 0: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOT428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
80
20V
VDS=5V
250
125°C
ID(A)
ID (A)
60
10V
200
150
8V
100
VGS=10V, ID=30A
50
20
VGS=6V
7V
40
25°C
0
0
1
2
3
4
0
5
2
VDS (Volts)
Fig 1: On-Region Characteristics
4
5
6
7
8
VGS(Volts)
Figure 2: Transfer Characteristics
12
Normalized On-Resistance
2.4
11
RDS(ON) (mΩ)
3
10
VGS=10V
9
8
2.2
VGS=10V
ID=30A
2
1.8
20
48
30
10
1.6
1.4
1.2
26
63
40
13
1
7
0
20
40
60
80
0.8
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
20
ID=30A
1.0E+01
125°C
125°C
1.0E+00
IS (A)
RDS(ON) (mΩ)
16
12
1.0E-01
25°C
1.0E-02
8
1.0E-03
25°C
1.0E-04
4
6
8
10
12
14
16
18
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOT428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
14
VDS=30V
ID=30A
5
Ciss
VGS (Volts)
10
8
6
VGS=10V, ID=30A
4
Capacitance (nF)
12
4
3
2
Coss
0
0
0
10
20
30
40
50
60
70
80
90
100
0
15
30
45
60
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
TJ(Max)=150°C, TA=25°C
1ms
10ms
100m
1
10s
100
0.0001
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=1.3°C/W
20
48
30
10
500
300
1s
DC
TJ(Max)=175°C
TA=25°C
700
Power (W)
ID (Amps)
100µs
10
75
900
10µs
RDS(ON)
limited
100
ZθJC Normalized Transient
Thermal Resistance
Crss
1
2
0.001
0.01
26
63
40
13
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOT428
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
80
tA =
60
L ⋅ ID
BV − VDD
40
VGS=10V, ID=30A
TA=25°C
20
0
0.00001
0.001
90
60
30
80
60
40
20
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
Current rating ID(A)
120
0
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
Power Dissipation (W)
ID(A), Peak Avalanche Current
100
175
175