AOT428 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT428 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT428 is Pb-free (meets ROHS & Sony 259 specifications). AOT428L is a Green Product ordering option. AOT428 and AOT428L are electrically identical. VDS (V) = 75V ID = 80A (VGS = 10V) RDS(ON) < 11 mΩ (VGS = 10V) TO-220 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G C C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Junction and Storage Temperature Range V A 300 IAR 60 A EAR 180 mJ 57 115 W 58 TJ, TSTG Thermal Characteristics Parameter Alpha & Omega Semiconductor, Ltd. ±30 ID IDM PD TC=100°C Maximum Junction-to-Ambient A Maximum Junction-to-Case B Units V 80 TC=100°C Pulsed Drain Current Avalanche Current Maximum 75 °C -55 to 175 Steady-State Symbol RθJA Steady-State RθJC Typ Max Units 60 0.7 75 1.3 °C/W °C/W AOT428 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions ID=250uA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=VGS, ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V 0.02 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge 5 2 TJ=125°C VDS=5V, ID=30A DYNAMIC PARAMETERS Ciss Input Capacitance Coss 1 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=30A Units µA 100 nA 3.4 4.5 V 9.1 11 15.5 20 200 VGS=10V, ID=30A RDS(ON) Max V TJ=55°C IGSS Crss Typ 75 VDS=60V, VGS=0V VGS(th) IS Min A 100 0.7 mΩ S 1 V 55 A 3790 4900 pF 321 420 pF 222 290 pF 1.25 1.5 Ω 65 85 nC 23 30 nC Qgd Gate Drain Charge 23.5 31 nC tD(on) Turn-On DelayTime 20 26 ns tr Turn-On Rise Time 48 63 ns tD(off) Turn-Off DelayTime 30 40 ns tf Turn-Off Fall Time 10 13 ns trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/µs 43 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 88 56 114 ns nC VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. 11 Rev 0: Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOT428 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 80 20V VDS=5V 250 125°C ID(A) ID (A) 60 10V 200 150 8V 100 VGS=10V, ID=30A 50 20 VGS=6V 7V 40 25°C 0 0 1 2 3 4 0 5 2 VDS (Volts) Fig 1: On-Region Characteristics 4 5 6 7 8 VGS(Volts) Figure 2: Transfer Characteristics 12 Normalized On-Resistance 2.4 11 RDS(ON) (mΩ) 3 10 VGS=10V 9 8 2.2 VGS=10V ID=30A 2 1.8 20 48 30 10 1.6 1.4 1.2 26 63 40 13 1 7 0 20 40 60 80 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 20 ID=30A 1.0E+01 125°C 125°C 1.0E+00 IS (A) RDS(ON) (mΩ) 16 12 1.0E-01 25°C 1.0E-02 8 1.0E-03 25°C 1.0E-04 4 6 8 10 12 14 16 18 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOT428 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 14 VDS=30V ID=30A 5 Ciss VGS (Volts) 10 8 6 VGS=10V, ID=30A 4 Capacitance (nF) 12 4 3 2 Coss 0 0 0 10 20 30 40 50 60 70 80 90 100 0 15 30 45 60 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000 TJ(Max)=150°C, TA=25°C 1ms 10ms 100m 1 10s 100 0.0001 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=1.3°C/W 20 48 30 10 500 300 1s DC TJ(Max)=175°C TA=25°C 700 Power (W) ID (Amps) 100µs 10 75 900 10µs RDS(ON) limited 100 ZθJC Normalized Transient Thermal Resistance Crss 1 2 0.001 0.01 26 63 40 13 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOT428 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 80 tA = 60 L ⋅ ID BV − VDD 40 VGS=10V, ID=30A TA=25°C 20 0 0.00001 0.001 90 60 30 80 60 40 20 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) 100 Current rating ID(A) 120 0 0.0001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 0 Power Dissipation (W) ID(A), Peak Avalanche Current 100 175 175