Datasheet

AOT430
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOT430 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOT430 is Pb-free (meets ROHS & Sony
259 specifications).
VDS (V) = 75V
ID = 80 A
(VGS = 10V)
RDS(ON) < 11.5mΩ (VGS = 10V)
UIS TESTED!
TO-220
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
C
C
Repetitive avalanche energy L=0.3mH
C
TC=25°C
Power Dissipation B
Junction and Storage Temperature Range
V
A
200
IAR
45
A
EAR
300
mJ
78
268
W
134
TJ, TSTG
Thermal Characteristics
Parameter
Alpha & Omega Semiconductor, Ltd.
±25
ID
IDM
PD
TC=100°C
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Units
V
80
TC=100°C
Pulsed Drain Current
Avalanche Current
G
Maximum
75
°C
-55 to 175
Steady-State
Symbol
RθJA
Steady-State
RθJC
Typ
Max
Units
45
0.45
60
0.56
°C/W
°C/W
AOT430
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Conditions
ID=250uA, VGS=0V
VDS=0V, VGS=±25V
Gate Threshold Voltage
VDS=VGS, ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
RDS(ON)
Static Drain-Source On-Resistance
gFS
VSD
VDS=5V, ID=80A
Transconductance
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current G
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
5
1
2
2.7
4
200
VGS=10V, ID=30A
TJ=125°C
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=30A
Units
V
1
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Max
75
TJ=55°C
Gate-Body leakage current
Crss
Typ
VDS=60V, VGS=0V
VGS(th)
IS
Min
µA
uA
V
A
9.8
11.5
16.0
19.0
90
0.7
mΩ
1
S
V
80
A
4700
pF
400
pF
180
pF
3
Ω
114
nC
33
nC
Qgd
Gate Drain Charge
18
nC
tD(on)
Turn-On DelayTime
21
ns
tr
Turn-On Rise Time
39
ns
tD(off)
Turn-Off DelayTime
70
ns
tf
Turn-Off Fall Time
24
ns
trr
Body Diode Reverse Recovery Time
IF=30A, dI/dt=100A/µs
53
Qrr
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
143
ns
nC
VGS=10V, VDS=30V, RL=1Ω,
RGEN=3Ω
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev2: Feb 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOT430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
100
10V
8V
200
VDS=5V
80
6V
150
ID(A)
ID (A)
60
5.5V
100
125°C
40
25°C
50
20
VGS=4.5V
-40°C
0
0
0
2
4
6
8
10
3
3.5
VDS (Volts)
Figure 1: On-Region Characteristics
4.5
5
5.5
6
VGS(Volts)
Figure 2: Transfer Characteristics
13
2
Normalized On-Resistance
12
11
RDS(ON) (mΩ)
4
10
VGS=10V
9
8
7
1.8
VGS=10V, 30A
1.6
1.4
1.2
1
0.8
6
0
20
40
60
80
0.6
100
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
30
ID=30A
1.0E+01
25
125°C
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ)
20
15
1.0E-01
25°C
1.0E-02
10
1.0E-03
25°C
-40°C
5
1.0E-04
0
0.0
4
8
12
16
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOT430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8
10
VDS=30V
ID=30A
Capacitance (nF)
VGS (Volts)
8
6
4
6
Ciss
4
2
2
Coss
Crss
0
0
40
80
120
0
0
15
30
45
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
60
1000
150
10µs
100
ID (Amps)
ID(A), Peak Avalanche Current
TJ(Max)=175°C, TC=25°C
1ms
DC
10
10ms
RDS(ON) limited
1
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
1000
125
100
TA=25°C
75
TA=150°C
50
25
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 10: Single Pulse Avalanche capability
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOT430
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
Power Dissipation (W)
100
Current rating ID(A)
80
60
40
20
250
200
150
100
50
0
0
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 12: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
175
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
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