Datasheet

AOT460
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOT460/L uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in UPS, high
current switching applications.
AOT460and AOT460L are electrically identical.
VDS (V) = 60V
ID = 85 A
(VGS = 10V)
RDS(ON) < 7.5mΩ (VGS = 10V)
100% UIS Tested!
-RoHS Compliant
-Halogen Free
TO220
Bottom View
Top View
D
D
G
G
G
S
D
S
S
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentG
Units
V
±20
V
85
TC=100°C
Pulsed Drain Current
Maximum
60
C
ID
66
IDM
340
A
C
IAR
80
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR
320
mJ
Avalanche Current
Power Dissipation
B
TC=100°C
Junction and Storage Temperature Range
268
PD
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Steady-State
Symbol
RθJA
Maximum Junction-to-Case B
Steady-State
RθJC
Alpha & Omega Semiconductor, Ltd.
W
134
°C
Typ
Max
Units
45
0.45
60
0.56
°C/W
°C/W
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AOT460
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
ID=250uA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
ID(ON)
On state drain current
Static Drain-Source On-Resistance
gFSForward Transconductance
VSD
Diode Forward Voltage
IS
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=10V, VDS=5V
TJ=125°C
Qgs
Gate Source Charge
100
nA
4
V
6.3
7.5
10.5
13
A
VDS=5V, ID=30A
90
IS=1A, VGS=0V
0.7
G
3800
VGS=0V, VDS=30V, f=1MHz
VGS=10V, VDS=30V, ID=30A
mΩ
1
S
V
85
A
4560
pF
430
pF
190
VGS=0V, VDS=0V, f=1MHz
µA
2.95
340
VGS=10V, ID=30A
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
50
2
Units
V
10
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Max
60
TJ=55°C
Maximum Body-Diode Continuous Current
Coss
Typ
VDS=60V, VGS=0V
IDSS
RDS(ON)
Min
pF
1.5
2.3
Ω
68
88
nC
33
nC
15
nC
Qgd
Gate Drain Charge
19
nC
tD(on)
Turn-On DelayTime
18
ns
tr
Turn-On Rise Time
35
ns
tD(off)
Turn-Off DelayTime
44
ns
tf
trr
Turn-Off Fall Time
23
ns
IF=30A, dI/dt=100A/µs
53
Qrr
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
98
Body Diode Reverse Recovery Time
VGS=10V, VDS=30V, RL=1Ω,
RGEN=3Ω
64
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev1: Jan. 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOT460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
100
VDS=5V
10V
8V
200
80
60
5V
ID(A)
ID (A)
150
100
40
125°C
25°C
4.5V
50
20
VGS=4V
-
0
0
0
1
2
3
4
5
2
VDS (Volts)
Figure 1: On-Region Characteristics
3
3.5
4
4.5
5
5.5
VGS(Volts)
Figure 2: Transfer Characteristics
2.2
Normalized On-Resistance
7.2
7
RDS(ON) (mΩ
Ω)
2.5
6.8
VGS=10V
6.6
6.4
6.2
6
2
1.8
1.6
VGS=10V, 30A
1.4
1.2
1
0.8
0.6
0
20
40
60
80
100
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
25
100
ID=30A
10
1
15
IS (A)
RDS(ON) (mΩ
Ω)
20
125°
10
125°C
0.1
25°C
0.01
-40°C
0.001
25°
5
-40°C
0
4
8
12
16
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOT460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
10
VDS=30V
ID=30A
Ciss
Capacitance (nF)
VGS (Volts)
8
6
4
4
2
Crss
2
0
Coss
0
0
20
40
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
80
0
15
30
45
VDS (Volts)
Figure 8: Capacitance Characteristics
60
10000
1000
100
500µs
RDS(ON)
limited
1ms
10
Power (W)
ID (A)
10µs
1000
5ms
DC
TJ(Max)=175°C
=175 C
TC=25°C
1
100
1
10
100
0.0001
VDS (V)
Figure 9: Maximun Forward Biased Safe Operating
Area (Note F)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Single Pulse
Ton
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOT460
300
100
250
80
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
150
100
60
40
20
50
0
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
0
25
50
75
100
125
150
TCASE (°C)
Figure 12: Current De-rating (Note B)
175
ID(A), Peak Avalanche Current
150
TA=25°C
125
100
75
TA=150°C
50
25
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 10: Single Pulse Avalanche capability
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AOT460
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
L
Vgs
Ig
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Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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