Datasheet

AOT466L/AOB466L
60V N-Channel MOSFET
General Description
Product Summary
The AOT466L & AOB466L combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON).This device is ideal for
boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
60V
180A
RDS(ON) (at VGS=10V)
< 3.9mΩ
100% UIS Tested
100% Rg Tested
TO-263
TO220
Top View
Bottom View
D2PAK
Top View
D
D
Bottom View
D
D
D
G
G
D
S
S
D
S
G
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
Maximum
60
±25
TA=25°C
V
140
IDM
A
540
15
IDSM
TA=70°C
Units
V
180
ID
TC=100°C
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
G
A
12
Avalanche Current C
IAS, IAR
80
A
Avalanche energy L=0.3mH C
EAS, EAR
960
mJ
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev0: Otc 2010
1.9
Steady-State
Steady-State
RθJA
RθJC
W
1.2
TJ, TSTG
Symbol
t ≤ 10s
W
167
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
333
PD
TC=100°C
-55 to 175
Typ
12
54
0.35
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°C
Max
15
65
0.45
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOT466L/AOB466L
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Conditions
Min
ID=250µA, VGS=0V
VDS=60V, VGS=0V
Zero Gate Voltage Drain Current
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
3.6
VGS=10V, VDS=5V
540
100
VGS=10V, ID=20A
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
Units
V
1
TJ=55°C
TO220
VGS=10V, ID=20A
TO263
VDS=5V, ID=20A
Max
60
VGS(th)
ID(ON)
IS
Typ
4.3
5
µA
nA
V
A
3.2
3.9
5.2
6.3
2.9
60
3.6
mΩ
S
0.67
mΩ
1
V
180
A
4485
5607
6730
pF
VGS=0V, VDS=30V, f=1MHz
750
1076
1400
pF
280
485
680
pF
VGS=0V, VDS=0V, f=1MHz
0.35
0.75
1.2
Ω
VGS=10V, VDS=30V, ID=20A
85
108
130
nC
24
30
36
nC
27
46
65
nC
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
31
ns
29
ns
41
ns
13
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
20
35
50
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
190
273
355
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Otc 2010
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Page 2 of 6
AOT466L/AOB466L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
80
VDS=5V
80
7V
6V
60
ID(A)
ID (A)
60
40
40
5.5V
20
125°C
20
25°C
VGS=5V
0
0
0
1
2
3
4
2
5
6
Normalized On-Resistance
VGS=10V
4
3
2
1
0
5
6
7
2.0
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
1.0
0.8
0
20
40
60
80
100
0
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
1.0E+02
7
ID=20A
1.0E+01
6
40
125°C
1.0E+00
5
125°C
IS (A)
RDS(ON) (mΩ)
4
2.2
5
RDS(ON) (mΩ)
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1.0E-01
25°C
4
1.0E-02
3
25°C
1.0E-03
2
1.0E-04
6
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: Otc 2010
7
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT466L/AOB466L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
9000
7000
Capacitance (pF)
VGS (Volts)
8000
VDS=30V
ID=20A
8
6
4
Ciss
6000
5000
4000
3000
Coss
Crss
2000
2
1000
0
0
0
20
40
60
80
100
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
120
1000.0
100µs
1ms
DC
10ms
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
Power (W)
ID (Amps)
4000
10µs 10µs
RDS(ON)
limited
10.0
ZθJC Normalized Transient
Thermal Resistance
60
TJ(Max)=175°C
TC=25°C
17
5
2
10
3000
2000
1000
1
10
VDS (Volts)
100
1000
0
1E-05 0.0001 0.001
0.01
0.1
1
0
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating 18
Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
1
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
5000
100.0
10
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.45°C/W
0.1
PD
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
Ton
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: Otc 2010
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Page 4 of 6
AOT466L/AOB466L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
350
300
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
TA=125°C
250
200
150
100
50
10
0
1
10
100
1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
1000
200
TA=25°C
160
Power (W)
Current rating ID(A)
0
120
80
100
17
5
2
10
10
40
0
0
25
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
1
50
175
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.01
1
100
10000
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=65°C/W
0.1
PD
0.01
Single Pulse
0.001
0.01
0.1
Ton
1
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: Otc 2010
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Page 5 of 6
AOT466L/AOB466L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev0: Otc 2010
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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Page 6 of 6