Datasheet

AOT470/AOB470L
75V N-Channel MOSFET
General Description
Product Summary
The AOT470/AOB470L uses advanced trench technology
and design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
ID (at VGS=10V)
75V
100A
RDS(ON) (at VGS=10V)
< 10.5mΩ
VDS
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
Bottom View
Top View
D
D
Bottom View
D
D
D
G
G
D
S
G
D
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.3mH C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev2: Mar 2012
Steady-State
Steady-State
A
A
IAS, IAR
45
A
EAS, EAR
300
mJ
268
W
134
2.1
RθJA
RθJC
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W
1.3
TJ, TSTG
Symbol
t ≤ 10s
V
8
PDSM
Junction and Storage Temperature Range
±25
10
PD
TA=25°C
Units
V
200
IDSM
TA=70°C
Maximum
75
78
IDM
TA=25°C
Continuous Drain
Current
S
S
100
ID
TC=100°C
G
-55 to 175
Typ
10
45
0.45
°C
Max
12
60
0.56
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOT470/AOB470L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
IGSS
VGS(th)
ID(ON)
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
VDS=0V, VGS= ±25V
VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VGS=10V, ID=30A
TO263
VDS=5V, ID=30A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
µA
µA
1
2.7
4
V
200
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
V
5
2
VGS=10V, VDS=5V
TO220
Units
1
TJ=55°C
Gate Threshold Voltage
On state drain current
Max
75
VDS=75V, VGS=0V
VGS=10V, ID=30A
RDS(ON)
Typ
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
A
8.3
10.5
13.7
17
8
90
10.2
0.7
mΩ
mΩ
S
1
V
100
A
3760
4700
5640
pF
280
400
520
pF
110
180
250
pF
1.5
3
4.5
Ω
114
136
nC
33
40
nC
25
nC
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
VGS=10V, VDS=30V, ID=30A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
18
tD(on)
Turn-On DelayTime
21
ns
tr
Turn-On Rise Time
39
ns
tD(off)
Turn-Off DelayTime
70
ns
tf
trr
Turn-Off Fall Time
24
ns
IF=30A, dI/dt=100A/µs
37
53
70
Qrr
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
100
143
185
VGS=10V, VDS=30V, RL=1Ω,
RGEN=3Ω
Body Diode Reverse Recovery Time
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev2: Mar 2012
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Page 2 of 6
AOT470/AOB470L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
100
10V
VDS=5V
80
8V
150
6V
100
5.5V
60
ID(A)
ID (A)
200
40
125°C
25°C
50
20
-40°C
VGS=4.5V
0
0
0
2
4
6
8
10
3
4
4.5
5
5.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Normalized On-Resistance
12
11
RDS(ON) (mΩ
Ω)
6
2.2
13
VGS=10V
10
9
8
7
6
2
VGS=10V
ID=30A
1.8
1.6
17
5
2
10
1.4
1.2
1
0.8
0.6
0
60
80
100
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
20
40
-50
25
-25
0
25
50 75 100 125 150 175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
ID=30A
1.0E+01
20
40
1.0E+00
125°C
15
IS (A)
RDS(ON) (mΩ
Ω)
3.5
125°C
25°C
1.0E-01
10
1.0E-02
-40°C
5
25°C
1.0E-03
1.0E-04
0
4
12
16
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev2: Mar 2012
8
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT470/AOB470L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
VDS=30V
ID=30A
8
Capacitance (nF)
VGS (Volts)
6
6
4
Ciss
4
2
2
Coss
Crss
0
0
0
20
40
60
80
100
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
120
RDS(ON)
limited
DC
10µs
10µs
800
1ms
600
Power (W)
ID (Amps)
30
40
50
60
1000
100.0
10ms
1.0
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=175°C
TC=25°C
17
5
2
10
400
200
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001
0.01
0.1
1
10
0
Pulse Width (s)
18 Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Zθ JC Normalized Transient
Thermal Resistance
20
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
10.0
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.56°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev2: Mar 2012
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Page 4 of 6
AOT470/AOB470L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
100
TA=100°C
TA=150°C
TA=125°C
250
200
150
100
50
0
10
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
150
175
10000
120
TA=25°C
100
1000
80
Power (W)
Current rating ID(A)
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
60
17
5
2
10
100
40
10
20
1
0
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
175
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev2: Mar 2012
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Page 5 of 6
AOT470/AOB470L
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev2: Mar 2012
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6