Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT2327
Power MOSFET
P-CHANNEL ENHANCEMENT
MODE

DESCRIPTION
The UTC UT2327 is P-channel enhancement mode Power
MOSFET, designed in serried ranks. with fast switching speed, low
on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
SYMBOL


ORDERING INFORMATION
Ordering Number
Note:

UT2327G-AE3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
S: Source
MARKING
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QW-R502-108.C
UT2327

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATING
UNIT
- 20
V
± 12
V
TA=25°C
-2.6
A
Continuous Drain Current (Note 3)
ID
TA=70°C
-2.1
A
Pulsed Drain Current (Note 1, 2)
IDM
-10
A
Total Power Dissipation (TA=25°C)
PD
1.38
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)

SYMBOL
VDS
VGS
SYMBOL
θJA
RATING
90
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
TJ=25°C
Drain-Source Leakage Current
IDSS
TJ=70°C
Gate-Source Leakage Current
IGSS
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Drain-Source On-State Resistance (Note 2)
RDS(ON)
TEST CONDITIONS
MIN
VGS=0V, ID=-250uA
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V
VGS=±12V
Reference to 25℃, ID=-1mA
-20
VDS=VGS, ID=-250uA
VGS=-5V, ID=-2.8A
VGS=-2.8V, ID=-2.0A
VDS=-5V, ID=-2.8A
-0.5
TYP
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-1
-10
±100
V
uA
uA
nA
V/°C
130
190
V
mΩ
mΩ
S
-0.1
Forward Transconductance
gFS
4.4
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
295
Output Capacitance
COSS
VGS=0V, VDS=-6V, f=1.0MHz
170
Reverse Transfer Capacitance
CRSS
65
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
5.2
Turn-ON Rise Time
tR
9.7
VDS=-15V, VGS=-10V,
ID=-1A, RG=6Ω, RD=15Ω
Turn-OFF Delay Time
tD(OFF)
19
Turn-OFF Fall Time
tF
29
Total Gate Charge (Note 2)
QG
5.2
Gate-Source Charge
QGS
1.36
VDS=-6V, VGS=-5V, ID=-2.8A
Gate-Drain Charge
QGD
0.6
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
TJ=25℃, IS=-1.6A, VGS=0V
Drain-Source Diode Forward Voltage(Note2)
VSD
Maximum Continuous Drain-Source Diode
IS
VD=VG=0V, VS=-1.2V
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current (Note 1)
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min.
UNISONIC TECHNOLOGIES CO., LTD
MAX UNIT
pF
pF
pF
10
ns
ns
ns
ns
nC
nC
nC
-1.2
V
-1
A
-10
A
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UT2327
Drain Current, ID (A)
TYPICAL CHARACTERISTICS
Drain Current, ID (A)

Power MOSFET
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
800
1.8
Normalized RDS(ON)
ID = -2A
TA =25℃
600
RDS(ON) (Ω)
1.6
400
200
ID = -2.8A
VGS = -5V
1.4
1.2
1
0.8
0
0
2
4
6
8
0.6
-50
10
100
Junction Temperature, Tj (℃)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
1.5
Gate Threshold Voltage, VGS(TH) (V)
Continuous Source Current, IS (A)
50
Gate-to-Source Voltage, VGS (V)
10
1
TJ=150℃
TJ =25℃
0
0
0.1
0
0.3
0.5
0.7
0.9
1.1
1.3
Source-to-Drain Voltage, VSD (V)
UNISONIC TECHNOLOGIES CO., LTD
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150
1.0
0.5
0.0
-50
0
50
100
150
Junction Temperature, TJ (℃)
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UT2327
TYPICAL CHARACTERISTICS(Cont.)
ID (A)
Normalized Thermal Response (θja)
C (pF)
Gate to Source Voltage, VGS (V)

Power MOSFET
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QW-R502-108.C
UT2327
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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