Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT3401
Power MOSFET
P-CHANNEL ENHANCEMENT
MODE

DESCRIPTION
The UTC UT3401 is P-channel enhancement mode Power
MOSFET, designed with high density cell, with fast switching speed,
low on-resistance, excellent thermal and electrical capabilities and
operation with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
SYMBOL

3.Drain
2.Gate
1.Source

ORDERING INFORMATION
Ordering Number
Note:

UT3401G-AE3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
S: Source
MARKING
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QW-R502-109.F
UT3401

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 1)
ID
-4.2
A
Pulsed Drain Current (Note 2)
IDM
-30
A
Power Dissipation (Note 1)
PD
1.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction-to-Ambient

SYMBOL
θJA
MIN
TYP
65
MAX
90
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note 2)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
ID=-250μA, VGS=0V
VDS=-24V, VGS=0V
VDS=0V, VGS=±12V
-30
VGS(TH)
VDS=VGS, ID=-250μA
VGS=-10V, ID=-4.2A
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
-0.7
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS =0V, VDS =-15V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
tD(ON)
Turn-ON Rise Time
tR
VGS=-10V, VDS=-15V
RL=3.6Ω, RG =6Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge (Note 2)
QG
VGS=-4.5V, VDS=-15V, ID=-4A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
VDS=0V, IS=-1A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Reverse Recovery Time
tRR
IF=-4A, dI/dt=100A/μs
Reverse Recovery Charge
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300µs, duty cycle ≤2%
3. Surface mounted on 1 in2 copper pad of FR4 board
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
-1
42
53
80
MAX UNIT
-1
±100
V
µA
nA
-1.3
50
65
120
V
mΩ
mΩ
mΩ
954
115
77
pF
pF
pF
6.3
3.2
38.2
12
9.4
2
3
ns
ns
ns
ns
nC
nC
nC
-0.75
20.2
11.2
-1
V
-2.2
A
ns
nC
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QW-R502-109.F
UT3401
TYPICAL CHARACTERISTICS
Continuous Drain Current, ID (A)
Continuous Drain Current, ID (A)

Power MOSFET
On-Resistance vs.
Junction Temperature
On-Resistance vs.
Drain Current and Gate Voltage
120
1.8
100
1.6
ID=-3.5A, VGS=-10V
80
1.4
VGS = -2.5V
VGS = -4.5V
60
VGS=-2.5V
ID=-1A
1.2
40
1
VGS = 10V
20
0.00
0.8
2.00
4.00
6.00
8.00
10.00
Drain Current , ID (A)
UNISONIC TECHNOLOGIES CO., LTD
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0
25
50
75
100
125
150 175
Temperature (°C)
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QW-R502-109.F
UT3401
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Power (W)
Continuous Drain Current, -ID (A)
Capacitance (pF)
Gate-Source Voltage, -VGS (V)

Normalized Transient Thermal
Resistance, ZθJA
10
Normalized Maximum Transient Thermal
Impedance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01,
single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
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QW-R502-109.F
UT3401
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R502-109.F
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