Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UP672
Power MOSFET
N-CHANNEL MOSFET ARRAY
FOR SWITCHING

DESCRIPTION
6
5 4
The UTC UP672 includes two MOSFET devices in a SOT-363
package. It achieves high-density mounting and saves mounting
costs.

1 2
3
SOT-363
FEATURES
* Automatic mounting supported

SYMBOL
(3)
D2
(6)
D1
(5)
G2
(2)
G1

S1
(1)
S2
(4)
N-Channel
N-Channel
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UP672L-AL6-R
UP672G-AL6-R
Note: Pin Assignment: G: Gate
D: Drain

Package
SOT-363
S: Source
1
S1
Pin Assignment
2
3
4
5
G1 D2 S2 G2
6
D1
Packing
Tape Reel
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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UP672

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
RATINGS
UNIT
VDSS
50
V
VGSS
±7.0
V
Continuous
ID
100
mA
Drain Current
Pulsed (Note 2)
IDM
200
mA
Total Power Dissipation
PD
200
mW
Channel Temperature
TCH
150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW ≤ 10ms, Duty Cycle ≤ 50%

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
IGSS
VGS(OFF)
RDS(ON)1
RDS(ON)2
|yFS|
MIN
ID=250µA, VGS=0V
VDS=50V, VGS=0V
VDS=0V ,VGS=7.0V
VDS=0V ,VGS=-7.0V
50
VDS=3.0V, ID=1.0µA
VGS=2.5V, ID=10mA
VGS=4.0V, ID=10mA
VDS=3.V, ID=10mA
0.7
TYP
1.0
3
2.3
20
MAX
UNIT
10
5.0
-5.0
V
µA
µA
µA
1.5
40
20
V
Ω
Ω
mS
CISS
COSS
CRSS
VDS=3.0V, VGS=0V, f=1.0MHz
27
17
11
pF
pF
pF
tD(ON)
tR
tD(OFF)
tF
VDD=3V,ID=20mA, VGS(ON)=3V,
RG=10Ω, RL=120Ω
30
18
42
12.5
ns
ns
ns
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
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QW-R502-504.B
UP672

Power MOSFET
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UP672
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
Drain Current, ID (µA)

14
Drain Current, ID (mA)
12
VGS=4V, ID=10mA
10
8
VGS=2.5V, ID=10mA
6
4
2
0
0
50
100
150
200 250
Drain to Source Voltage, VDS (mV)
Source to Drain Diode Current, ISD (mA)
Drain-Source On-State Resistance
Characteristics
Source to Drain Diode Current vs. Source
to Drain Voltage
140
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-504.B
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