Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTM3023
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE

FEATURES
* RDS(ON) < 20mΩ @ VGS =10 V, IDS =20 A
RDS(ON) < 28mΩ @ VGS =5 V, IDS =10 A
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTM3023L-TN3-T
UTM3023G-TN3-T
UTM3023L-TN3-R
UTM3023G-TN3-R
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
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QW-R502-178.B
UTM3023

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
Maximum Continuous Drain Current
ID
30
A
Maximum Pulsed Drain Current
IDM
70
Maximum Power Dissipation
PD
62.5
W
Maximum Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance(Note 2)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0 V, IDS =250µA
VDS =24 V, VGS =0 V
VDS =0 V, VGS = ±20V
30
VGS(TH)
VDS =VGS, IDS =250 µA
VGS =10 V, IDS =20 A
VGS =5 V, IDS =10 A
1
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =15 V, VGS =0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
Turn-ON Rise Time
tR
IDS=2 A,VDD=15 V,RG=6 Ω,
Turn-OFF Delay Time
tD(OFF) VGEN =10V
Turn-OFF Fall Time
tF
Total Gate Charge (Note 2)
QG
VDS =15V, VGS =5V, IDS =10A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
ISD=15A,VGS=0V
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%
3. Surface Mounted on FR4 Board, t ≤ 10 sec.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
1
±100
1.5
15
22
2
20
28
1200
220
100
V
µA
nA
V
mΩ
pF
11
17
37
20
15
5.8
3.8
18
26
54
30
20
0.7
1.3
ns
nC
V
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
Power MOSFET
TYPICAL CHARACTERISTICS
Output Characteristics
30
Transfer Characteristics
40
VGS=5,6,7,8,9,10V
VDS=10V
Drain Current,IDS (A)
Drain Current,IDS (A)
25
20
4V
15
10
5
20
TJ=25℃
TJ=125℃
10
TJ=-55℃
VGS=3V
0
1.0
0
1.2
2
4
6
8
Drain-to-Source Voltage,VDS (V)
10
Threshold Voltage vs. Junction
Temperature
0.8
0.6
4.0
On-Resistance vs. Drain Current
IDS=250μA
1.0
3.0
3.5
2.0
2.5
Gate-to-Source Voltage,VGS (V)
1.5
0.040
On-Resistance,RDS(ON) (Ω)
0
Threshold Voltage,VGS(th) (V)
30
0.035
VGS=5V
0.030
0.025
0.020
VGS=10V
0.015
0.010
0.005
0.4
0.000
25 50 75 100 125 150
0
Junction Temperature,TJ (℃)
0
5
10
20
15
Drain Current,IDS (A)
25
30
On-Resistance,RDS(ON) (Ω)
On-Resistance,RDS(ON) (Ω)
-50 -25
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTM3023
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance,C (pF)
Gate-to-Source Voltage,VGS (V)

Source-Drain Diode Forward Voltage
Single Pulse Power
3000
100
2500
2000
10
1500
1
TJ=125℃
TJ=-55℃
1000
TJ=25℃
500
0.1
1.4
0
10-5
10-4
10-3
10-2 10-1
Time (sec)
100
101
Normalized Effective Transient
Thermal Impedance
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Source to Drain Voltage,VSD (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-178.B
UTM3023
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-178.B
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