Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTD410
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
„
1
DESCRIPTION
SOT-223
The UTD410 can provide excellent RDS(ON) and low gate
charge by using advanced trench technology. This UTD410 is
suitable for using as a load switch or in PWM applications.
„
FEATURES
1
* VDS=30V, ID=8A
* RDS(ON) =48mΩ @VGS =10V
„
„
TO-252
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTD410L-TN3-R
UTD410G-TN3-R
UTD410L-TN3-T
UTD410G-TN3-T
UTD410L-AA3-R
UTD410G-AA3-R
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-252
TO-252
SOT-223
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tape Reel
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QW-R502-142.B
UTD410
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
Continuous Drain Current
ID
8
A
Pulsed Drain Current (Note1)
IDM
20
Repetitive Avalanche Energy (L=0.1mH Note1)
EAR
10
mJ
TO-252
2
Power Dissipation (TC=25°C)
PD
W
SOT-223
2.3
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction-to-Ambient (TC=25°C)
„
SYMBOL
TO-252
SOT-223
MIN
θJA
TYP
46
MAX
60
55
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
SYMBOL
Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0 V, ID =250µA
VDS =24V,VGS =0V
VDS =0 V, VGS = ±20V
30
VGS(TH)
VDS =VGS, ID =250µA
VGS=10V, ID =8A
VGS=4.5V, ID =2A
1
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =15 V, VGS =0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VGS=10V,VDD=15V, RL=1.8Ω,
RG=3Ω
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall-Time
tF
Total Gate Charge
QG
Gate-Source Charge
QGS
VGS=10V, VDS=15V, ID=8A
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=1A
Maximum Continuous Drain-Source
IS
Diode Forward Current
Reverse Recovery Time
tRR
IF=8A, dIF/dt=100A/μs
Reverse Recovery Charge
QRR
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
1
±100
1.8
48
75
3
65
105
V
µA
nA
V
mΩ
288
57
39
pF
pF
pF
3.7
3.7
15.6
2.6
6.72
0.76
1.78
ns
ns
ns
ns
nC
nC
nC
0.75
12.6
5.1
1
V
4.3
A
ns
nC
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QW-R502-142.B
UTD410
Power MOSFET
TYPICAL CHARACTERISTICS
Normalized On-Resistance
On-Resistance, RDS(ON) (mΩ)
Continuous Drain Current, ID (A)
Continuous Drain Current, ID (A)
„
On-Resistance vs. Gate-Source Voltage
Body-Diode Characteristics
Maximum Continuous Drain-Source Diode
Forward Current, IS (A)
On-Resistance, RDS(ON) (mΩ)
190
170
150
ID=8A
130
110
125℃
90
70
25℃
50
30
10
0
3
4
6
8
10
Gate-Source Voltage, VGS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
125℃
25℃
1.0E-04
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Source-Drain Voltage, VSD (V)
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UTD410
„
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance Characteristics
Gate-Charge Characteristics
1400
VDS=15V
ID=8A
8
1200
1000
Capacitance (pF)
Gate-Source Voltage, VGS (V)
10
6
4
CISS
800
600
CRSS
400
2
200
COSS
0
0
2
4
0
8
6
0
5
Total Gate Charge, Qg (nC)
10
15
20
25
30
Power (W)
Continuous Drain Current, ID (A)
Drain-Source Voltage, VDS (V)
Normalized Maximum Transient Thermal Impedance
Normalized Transient Thermal
Resistance, ZθJA
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
1
PD
0.1
TON
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
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www.unisonic.com.tw
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QW-R502-142.B
UTD410
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-142.B
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