Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT3414
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE

DESCRIPTION
The UT3414 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate voltages
as low as 1.8V. This device is suitable for use as a load switch or in
PWM applications.

FEATURES
* RDS(ON) < 50mΩ @VGS = 4.5V
* RDS(ON) < 63mΩ @VGS = 2.5V
* RDS(ON) < 87mΩ @VGS = 1.8V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UT3414G-AE3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
S: Source
MARKING
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QW-R502-248.F
UT3414

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
ID
4.2
A
Pulsed Drain Current
IDM
15
A
Power Dissipation
PD
1.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)

THERMAL DATA
PARAMETER
Junction to Ambient

SYMBOL
θJA
MIN
TYP
100
MAX
125
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=250µA
VDS=16V, VGS=0V
VDS=0V, VGS=±8V
20
VGS(TH)
ID(ON)
VDS=VGS, ID=250µA
VDS=5V, VGS=4.5V
VGS=4.5V, ID=4.2A
VGS=2.5V, ID=3.7A
VGS=1.8V, ID=3.2A
0.4
15
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=10V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn ON Delay Time
tD(ON)
Turn ON Rise Time
tR
VDS=10V, VGS=5V, RL=2.7Ω
RG=6Ω
Turn OFF Delay Time
tD(OFF)
Turn OFF Fall-Time
tF
Total Gate Charge
QG
Gate Source Charge
QGS
VDS=10V, ID=4.2A, VGS=4.5V
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V, IS=1A
Maximum Body-Diode Continuous
IS
Current
Body Diode Reverse Recovery Time
tRR
IF=4A, dI/dt=100A/μs
Body Diode Reverse Recovery
QRR
IF=4A, dI/dt=100A/μs
Charge
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
UNIT
1
100
V
µA
nA
0.6
1
41
52
67
50
63
87
V
A
mΩ
436
66
44
pF
pF
pF
5.5
6.3
40
12.7
6.2
1.6
0.5
ns
ns
ns
ns
nC
nC
nC
0.76
1
V
2
A
12.3
ns
3.5
nC
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QW-R502-248.F
UT3414
Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Source to Drain Voltage
Switching Time Waveforms
1200
1000
VDS
800
90%
600
400
VGS
10%
tD(ON)
200
tD(OFF)
tTHL
tTLH
0
400
600
200
800
Source to Drain Voltage,VSD (mV)
Drain Current, ID (A)
0
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QW-R502-248.F
UT3414
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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QW-R502-248.F
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