Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT3416
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR

DESCRIPTION
The UTC UT3416 is advanced n-channel enhancement
MOSFET which can provide the designer with the best combination
of excellent RDS (ON), low gate charge and low gate voltages as low
as 1.8V.When it is used as a load switch or in PWM application, the
UTC UT3416 can be considered as an ideal.

FEATURES
* VDS =20 V
* ID =6.5 A
* RDS(ON)<22 mΩ @ VGS=4.5V, ID =6.5A

SYMBOL

ORDERING INFORMATION

Ordering Number
Package
UT3416G-AE2-R
UT3416G-AE3-R
SOT-23-3
SOT-23
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
MARKING
34SG
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Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-325.E
UT3416

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current (Ta=25°C)
ID
6.5
A
Pulsed Drain Current (Note 2)
IDM
30
A
Power Dissipation (Ta=25°C)(Note 3)
PD
1.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. Surface mounted on 1in2 copper pad of FR4 board.

THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient (Note)
θJA
Note: Surface mounted on 1 in2 copper pad of FR4 board

MIN
TYP
85
MAX
125
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
VGS(TH)
ID(ON)
Static Drain-Source On-Resistance
RDS(ON)
TEST CONDITIONS
VGS =0V, ID =250µA
VGS =0V, VDS =16V
VGS =±4.5V, VDS =0V
VGS = ±8V, VDS =0V
20
VDS =VGS, ID =250µA
VGS =4.5V, VDS =5V
VGS=4.5V, ID =6.5A
VGS =2.5V, ID =5.5A
VGS =1.8V, ID =5A
0.4
30
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS =0V, VDS =10V, f =1MHz
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VGS =0V , VDS =0V, f =1MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS =5V, VDS =10V
RL =10Ω, RGEN =3Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDS =10V,VGS =4.5V,ID =6.5A
Gate Source Charge
QGS
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS =1A, VGS =0V
Maximum Body-Diode Continuous
IS
Current
Body Diode Reverse Recovery Time
tRR
IF =6.5A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge
QRR
Note: Surface mounted on 1 in2 copper pad of FR4 board.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
UNIT
1
±1
±10
V
µA
µA
µA
0.6
1
18
21
26
22
26
34
910
250
230
1.5
1100
270
250
pF
pF
pF
Ω
30
75
335
210
155
12
14
50
85
360
250
170
ns
ns
ns
ns
nC
nC
nC
0.76
1
V
2.5
A
17.7
6.7
V
A
mΩ
mΩ
mΩ
ns
nC
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QW-R502-325.E
UT3416

Power MOSFET
TYPICAL CHARACTERISTICS
Power Dissipatio vs. Ambient Temperature
ds
(o
n
)L
100us
R
Drain current, ID (A)
10
im
it
100
1ms
1
10ms
0.1
DC
0.01
TA=25ºC
0.1
1
10
100
Drain-Source Voltage, VDS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-325.E
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