Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT3419
Power MOSFET
20V, 3.5A P-CHANNEL
ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR

DESCRIPTION
The UTC UT3419 is a P-channel enhancement MOSFET
providing designers with excellent RDS(ON), low gate charge. The
gate voltage is as low as 2.5V.
The UTC UT3419 can be applied in PWM applications or used
as a load switch.

FEATURES
* RDS(ON) < 75mΩ (VGS = -10V)
RDS(ON) < 95mΩ (VGS = -4.5V)
RDS(ON) < 145mΩ (VGS = -2.5V)

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UT3419G-AE2-R
UT3419G-AE3-R
Pin Assignment: S: Source
Package
G: Gate
SOT-23-3
SOT-23
D: Drain
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
MARKING
34VG
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QW-R502-391.F
UT3419

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
RATINGS
UNIT
-20
V
±12
V
TA =25°C
-3.5
A
Continuous Drain Current (Note 1)
ID
TA =70°C
-2.8
A
Pulsed Drain Current (Note 2)
IDM
-15
A
TA =25°C
1.4
W
PD
Total Power Dissipation (Note 1)
TA =70°C
0.9
W
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
t ≤ 10s
90
°C/W
Junction to Ambient (Note 1)
θJA
Steady-State
125
°C/W
2
Notes: 1. The value of θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any a given application depends on the user's specific board
design. The current rating is based on the t ≤ 10s thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
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QW-R502-391.F
UT3419

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Drain-Source On-State Resistance
SYMBOL
BVDSS
IDSS
IGSS
TEST CONDITIONS
VGS=0V, ID=-250µA
VDS=-16V,VGS=0V
VDS=0V ,VGS=±10V
VDS=0V ,VGS=±12V
VGS(TH) VDS= VGS, ID=-250µA
ID(ON) VGS=-4.5V, VDS=-5V
VGS=-10V,ID=-3.5A
RDS(ON) VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-1A
gFS
VDS=-5V, ID=-3.5A
MIN
TYP
MAX
UNIT
-0.5
±100
±100
V
µA
nA
nA
-20
-0.7
-15
-0.9
-1.4
59
76
111
6.8
75
95
145
V
A
mΩ
mΩ
mΩ
S
Forward Transconductance
DYNAMIC PARAMETERS
512
620
pF
Input Capacitance
CISS
VDS=-10V,VGS=0V,
Output Capacitance
COSS
77
pF
f =1MHz
Reverse Transfer Capacitance
CRSS
62
pF
Gate Resistance
RG
VGS =0V, VDS =0V, f =1MHz
9.2
13
Ω
SWITCHING PARAMETERS
Total Gate Charge
QG
5.5
6.6
nC
VDS=-10V,VGS=-4.5V,
Gate-Source Charge
QGS
0.8
nC
ID=-3.5A
Gate-Drain Charge
QGD
1.9
nC
Turn-ON Delay Time
tD(ON)
5
ns
Turn-ON Rise Time
tR
6.7
ns
VDS=-10V,VGS=-10V,
Turn-OFF Delay Time
tD(OFF) RL=2.8Ω, RGEN=3Ω
28
ns
Turn-OFF Fall Time
tF
13.5
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=-1A, VGS =0V
-0.65
-0.81
-0.95
V
Maximum Body-Diode Continuous
IS
-2
A
Current
Body Diode Reverse Recovery Time
trr
IF=-3.5A, dI/dt=100A/μs
9.8
12
ns
Body Diode Reverse Recovery Charge
QRR
IF=-3.5A, dI/dt=100A/μs
2.7
nC
Notes: 1. The θJA is the sum of the thermal impedance from junction to lead θJL and lead to ambient.
2. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The SOA curve provides a single pulse rating.
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UT3419
TYPICAL CHARACTERISTICS
Drain Current, -ID (A)
Drain Current, -ID (A)
Drain Current, -ID (µA)
Drain Current, -ID (µA)

Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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