Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT3N01Z
Power MOSFET
N-CHANNEL SILICON MOSFET
GENERAL-PURPOSE
SWITCHING DEVICE
APPLICATIONS

DESCRIPTION
The UT3N01Z uses UTC advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device’s general purpose is for switching device
applications.

FEATURES
* RDS(ON) < 2.0Ω @ VGS=4V, ID=80mA
RDS(ON) < 3.0Ω @ VGS=2.5V, ID=40mA
RDS(ON) < 12.8Ω @ VGS=1.5V, ID=10mA
* Ultra low gate charge ( typical 5 nC )
* Low reverse transfer capacitance ( CRSS = typical 7.5 pF )
* Fast switching capability
* Enhanced ESD capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:
UT3N01ZG-AE2-R
UT3N01ZG-AL3-R
UT3N01ZG-AN3-R
UT3N01ZG-AL6-R
Pin Assignment: G: Gate D: Drain
Package
SOT-23-3
SOT-323
SOT-523
SOT-363
S: Source
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1
S
S
S
S1
Pin Assignment
2
3
4
5
G
D
G
D
G
D
G1 D2 S2 G2
6
D1
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
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UT3N01Z

Power MOSFET
MARKING
SOT-23-3 / SOT-323 / SOT-523
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SOT-363
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UT3N01Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
30
V
±10
V
DC
0.15
A
Drain Current
ID
Pulse(Note 2)
0.6
A
SOT-23-3
330
SOT-323
200
Power Dissipation
PD
mW
SOT-523
150
SOT-363
200
Operating Temperature
TOPR
-40 ~ +85
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≤10μs, Duty cycle≤1%

SYMBOL
VDSS
VGSS
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Cutoff Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
BVDSS
IDSS
IGSS
VGS(OFF)
RDS(ON)
TEST CONDITIONS
VGS=0V, ID=1mA
VDS=30V,VGS=0V
VGS=±8V, VDS=0V
30
VDS=10V, ID=100µA
VGS=4V, ID=80mA
VGS=2.5V, ID=40mA
VGS=1.5V, ID=10mA
0.4
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=10V, VGS=0 V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
Gate Source Charge
QGS
VDS=10V, VGS=10V, ID=150mA
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
See specified Test Circuit
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=150mA, VGS=0V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
1.3
1.7
5.8
MAX UNIT
1
±10
V
µA
µA
1.3
2.0
3.0
12.8
V
Ω
Ω
Ω
18
11
7.5
pF
pF
pF
5
0.46
0.56
31
19
55
22
8
35
23
60
28
nC
nC
nC
ns
ns
ns
ns
0.87
1.2
V
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Power MOSFET
SWITCHING TIME TEST CIRCUIT
VOUT
D
RL=187.5Ω
ID=80mA
VIN
G
VDD=15V
4V
0V
Pulse Width= 10μs
Duty cycle≤1%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
D.U.T.
RG=50Ω
S
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TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
100
0
80
0
60
0
300
Drain Current vs.
Gate Threshold Voltage
250
Drain Current, ID (µA)
Drain Current, ID (µA)
120
0
40
0
20
0
200
150
100
50
0
0
0
0
30
40 50
60
10
20
Drain-Source Breakdown Voltage,
BVDSS(V)
100
0.2
0.4
0.6
0.8
1.0
1.2
Gate Threshold Voltage, VTH (V)
Drain-Source On-State
Resistance Characteristics
160
Drain Current vs.
Source to Drain Voltage
80
Drain Current, ID (mA)
Drain Current, ID (mA)
140
VGS=4V
ID=80mA
60
40
VGS=2.5V
ID=40mA
20
S
VGS=2.7V
Single Pulse
SOT-23
s
C
D
1
10
0.01
0.5
1s
0.02
0.2
0.4
0.6
0.8 1.0
Source to Drain Voltage, VSD (V)
1ms
IT
M
LI
0.1
0.05
40
Power vs. Single Pulse Time
4
s
0m
RD
N)
60
5
10
0.2
(O
80
0
Drain Current vs. Drain to Source
Voltage
0.5
100
0
5
10 15 25 35
Drain to Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power (W)
1
120
20
VGS=1.5V
ID=10mA
0
200
50
100
150
0
Drain to Source Voltage, VDS (mV)
Drain Current, ID (A)

Power MOSFET
3
2
1
0
0.001 0.01
0.1
1
10
100 300
Single Pulse Time (sec)
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UT3N01Z

Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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