UNISONIC TECHNOLOGIES CO., LTD UT3N01Z Power MOSFET N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS DESCRIPTION The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device’s general purpose is for switching device applications. FEATURES * RDS(ON) < 2.0Ω @ VGS=4V, ID=80mA RDS(ON) < 3.0Ω @ VGS=2.5V, ID=40mA RDS(ON) < 12.8Ω @ VGS=1.5V, ID=10mA * Ultra low gate charge ( typical 5 nC ) * Low reverse transfer capacitance ( CRSS = typical 7.5 pF ) * Fast switching capability * Enhanced ESD capability SYMBOL ORDERING INFORMATION Ordering Number Note: UT3N01ZG-AE2-R UT3N01ZG-AL3-R UT3N01ZG-AN3-R UT3N01ZG-AL6-R Pin Assignment: G: Gate D: Drain Package SOT-23-3 SOT-323 SOT-523 SOT-363 S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 S S S S1 Pin Assignment 2 3 4 5 G D G D G D G1 D2 S2 G2 6 D1 Packing Tape Reel Tape Reel Tape Reel Tape Reel 1 of 6 QW-R502-285.I UT3N01Z Power MOSFET MARKING SOT-23-3 / SOT-323 / SOT-523 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SOT-363 2 of 6 QW-R502-285.I UT3N01Z Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 30 V ±10 V DC 0.15 A Drain Current ID Pulse(Note 2) 0.6 A SOT-23-3 330 SOT-323 200 Power Dissipation PD mW SOT-523 150 SOT-363 200 Operating Temperature TOPR -40 ~ +85 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width≤10μs, Duty cycle≤1% SYMBOL VDSS VGSS ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Cutoff Threshold Voltage Static Drain-Source On-Resistance SYMBOL BVDSS IDSS IGSS VGS(OFF) RDS(ON) TEST CONDITIONS VGS=0V, ID=1mA VDS=30V,VGS=0V VGS=±8V, VDS=0V 30 VDS=10V, ID=100µA VGS=4V, ID=80mA VGS=2.5V, ID=40mA VGS=1.5V, ID=10mA 0.4 DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=10V, VGS=0 V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG Gate Source Charge QGS VDS=10V, VGS=10V, ID=150mA Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR See specified Test Circuit Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=150mA, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 1.3 1.7 5.8 MAX UNIT 1 ±10 V µA µA 1.3 2.0 3.0 12.8 V Ω Ω Ω 18 11 7.5 pF pF pF 5 0.46 0.56 31 19 55 22 8 35 23 60 28 nC nC nC ns ns ns ns 0.87 1.2 V 3 of 6 QW-R502-285.I UT3N01Z Power MOSFET SWITCHING TIME TEST CIRCUIT VOUT D RL=187.5Ω ID=80mA VIN G VDD=15V 4V 0V Pulse Width= 10μs Duty cycle≤1% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw D.U.T. RG=50Ω S 4 of 6 QW-R502-285.I UT3N01Z TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 100 0 80 0 60 0 300 Drain Current vs. Gate Threshold Voltage 250 Drain Current, ID (µA) Drain Current, ID (µA) 120 0 40 0 20 0 200 150 100 50 0 0 0 0 30 40 50 60 10 20 Drain-Source Breakdown Voltage, BVDSS(V) 100 0.2 0.4 0.6 0.8 1.0 1.2 Gate Threshold Voltage, VTH (V) Drain-Source On-State Resistance Characteristics 160 Drain Current vs. Source to Drain Voltage 80 Drain Current, ID (mA) Drain Current, ID (mA) 140 VGS=4V ID=80mA 60 40 VGS=2.5V ID=40mA 20 S VGS=2.7V Single Pulse SOT-23 s C D 1 10 0.01 0.5 1s 0.02 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) 1ms IT M LI 0.1 0.05 40 Power vs. Single Pulse Time 4 s 0m RD N) 60 5 10 0.2 (O 80 0 Drain Current vs. Drain to Source Voltage 0.5 100 0 5 10 15 25 35 Drain to Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power (W) 1 120 20 VGS=1.5V ID=10mA 0 200 50 100 150 0 Drain to Source Voltage, VDS (mV) Drain Current, ID (A) Power MOSFET 3 2 1 0 0.001 0.01 0.1 1 10 100 300 Single Pulse Time (sec) 5 of 6 QW-R502-285.I UT3N01Z Power MOSFET TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-285.I