Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT4411
Power MOSFET
P-CHANNEL
ENHANCEMENT MODE

DESCRIPTION
The UT4411 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.

FEATURES
* RDS(ON) < 32mΩ @ VGS = -10 V, ID = -8 A
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified

SYMBOL
Drain
Gate
Source

ORDERING INFORMATION
Ordering Number
Note:

UT4411G-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
1
S
2
S
Pin Assignment
3 4 5 6
S G D D
7
D
8
D
Packing
Tape Reel
MARKING
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QW-R502-191.D
UT4411

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
-8
A
Pulsed Drain Current
IDM
-40
A
Power Dissipation
PD
3
W
Junction Temperature
TJ
+150
°C
Strong Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
SYMBOL
θJA
Junction-to-Ambient

MIN
TYP
54
MAX
75
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0 V, ID =-250 µA
VDS =-24 V, VGS =0 V
VDS =0 V, VGS = ±20 V
-30
VGS(TH)
ID(ON)
VDS =VGS, ID =-250 µA
VDS =-5V, VGS =-10 V
VGS =-10V, ID =-8A
VGS =-4.5V, ID =-5A
-1.2
-40
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =-15V, VGS =0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS =-15V, VGS =-10V,
Gate Source Charge
QGS
ID =-8A
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=-10V,VDS=-10V,
ID =-0.25A, RGEN =25Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
IS
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤0.5% max.
3. Surface mounted on 1 in 2 copper pad of FR4 board, t≤10s.
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
MAX UNIT
-1
±100
-2.4
26
50
32
55
1200 1400
170
122
18.4
2.7
4.9
38
47
300
130
23
-0.76
-1
-4.2
V
µA
nA
V
A
mΩ
pF
nC
ns
V
A
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UT4411
TYPICAL CHARACTERISTICS
On-Region Characteristics
30
-10V
-5V
-6V
25
VDS=-5V
-4.5V
25
20
-4V
15
-3.5V
10
5
15
10
125
25
0
0
1
2
3
4
Drain to Source Voltage, -VDS (V)
0
5
On-Resistance vs. Drain Current and
Gate Voltage
60
1
2
3
4
Gate to Source Voltage, -VGS (V)
ID=-7.5A
55
VGS=-4.5V
50
45
40
35
30
25
VGS=-10V
20
15
5
On-Resistance vs. Junction Temperature
1.60
Normalized On-Resistance
Drain to Source On-Resistance,
RDS(ON) (mΩ)
20
5
VGS=-3.0V
0
VGS=-10V
1.40
1.20
VGS=-4.5V
1.00
0.80
10
0
5
10
15
20
Drain Current, -ID (A)
25
0
On-Resistance vs. Gate-Source Voltage
80
1.0E+01
ID=-7.5A
70
Reverse Drain Current, -IS (A)
Drain to Source On-Resistance,
RDS(ON) (mΩ)
Transfer Characteristics
30
Drain Current, -ID (A)

Drain Current, -ID (A)
Power MOSFET
60
50
125
40
25
30
20
10
0
3
4
5
6
8
9
7
Gate to Source Voltage, -VGS (V)
10
UNISONIC TECHNOLOGIES CO., LTD
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25
75 100 125 150
50
Junction Temperature ( )
175
Body-Diode Characteristics
1.0E+00
125
1.0E-01
1.0E-02
1.0E-03
25
1.0E-04
1.0E-05
1.0E-06
0.0
1.0
0.4
0.6
0.2
0.8
Body Diode Forward Voltage, -VSD (V)
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UT4411
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance (pF)
Gate to Source Voltage, -VGS (V)

100.0
Maximum Forward Biased Safe Operating
Area (Note E)
RDS(ON)
Limited
10.0
100μs
10ms
0.1s
TJ(Max)=150℃
TA=25℃
10μs
30
1ms
20
1s
10s
1.0
40
Single Pulse Power Rating Junctionto-Ambient (Note E)
10
DC
1
10
100
Drain to Source Voltage,-VDS (V)
0
0.001 0.01
0.1
1
10
100
1000
Pulse Width (s)
Normalized Transient Thermal
Resistance,ZθJA
0.1
0.1
TJ(Max)=150℃
TA=25℃
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QW-R502-191.D
UT4411

Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R502-191.D
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