Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT4422
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION

The UT4422 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES

* RDS(ON) < 15 mΩ @ VGS =10V, ID =11A
RDS(ON) < 24 mΩ @ VGS =4.5 V, ID =10 A
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UT4422G-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
1
S
2
S
Pin Assignment
3
4
5
6
S G D D
7
D
8
D
Packing
Tape Reel
MARKING
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UT4422

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (TA=25°C) (Note 1)
ID
11
A
Pulsed Drain Current
IDM
50
A
Power Dissipation (TC=25°C)
PD
3
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)

THERMAL DATA
PARAMETER
SYMBOL
θJA
θJC
Junction to Ambient
Junction to Case

RATINGS
59 ~ 75
16 ~ 24
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
TYP
MAX UNIT
0.003
1
100
1.8
3
12.6
19.6
15
24
V
A
mΩ
mΩ
800
140
80
1040
180
110
1250
220
140
pF
pF
pF
15
19.8
2.5
3.5
4.5
3.9
17.4
3.2
24
6.5
5.5
25
5
nC
nC
nC
ns
ns
ns
ns
0.75
1
V
4.3
A
17.5
21
ns
9.3
12
nC
BVDSS
IDSS
IGSS
VGS =0 V, ID =250 µA
VDS =24 V, VGS =0 V
VDS =0 V, VGS = ±20 V
30
VGS(TH)
ID(ON)
VDS =VGS, ID =250 µA
VDS =5V, VGS =4.5 V
VGS =10V, ID =11A
VGS =4.5V, ID =10A
1
40
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =15V, VGS =0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS =15V, VGS =10V, ID =11A
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VGS=10V,VDS=15V,RL=1.35Ω,
Turn-ON Rise Time
tR
RGEN =3Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A,VGS=0V
Maximum Body-Diode Continuous
IS
Current
Body Diode Reverse Recovery Time
tRR
IF=11 A, dI/dt=100A/μs
Body Diode Reverse Recovery
QRR
Charge
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MIN
V
µA
nA
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UT4422
Normalized On-Resistance
Drain to Source On-Resistance,
RDS(ON) (mΩ)
Drain Current,ID (A)
TYPICAL CHARACTERISTICS
Drain Current,ID (A)

Power MOSFET
On-Resistance vs. Gate-Source Voltage
1.0E+01
ID=10A
Reverse Drain Current,IS (A)
Drain to Source On-Resistance,
RDS(ON) (mΩ)
60
50
40
125°С
30
20
25°С
Pulse width ≤80μs,
duty cycle ≤0.5%.
10
2
6
8
4
Gate to Source Voltage,VGS (V)
10
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Body-Diode Characteristics
1.0E+00
1.0E-01
1.0E-02
125°С
25°С
1.0E-03
1.0E-04
1.0E-05
0.0
Pulse width ≤80μs,
duty cycle ≤0.5%.
1.0
0.4
0.6
0.2
0.8
Body Diode Forward Voltage,VSD (V)
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Gate-Charge Characteristics
10
Capacitance Characteristics
1500
VDS=15V
ID=11A
1250
8
CISS
1000
6
750
4
500
2
CRSS
0
0
0
4
8
12
16
Gate Charge,QG (nC)
0
20
Maximum Forward Biased Safe
Operating Area
100.0
RDS(ON)
Limited
100μs
1ms
10.0
0.1
0.1
30
Single Pulse Power Rating
Junction-to-Ambient
TJ(Max)=150°С
TA=25°С
40
10μs
30
20
10
DC
TJ(Max)=150°С
TA=25°С
5
10
15
20
25
Drain to Source Voltage,VDS (V)
50
10ms
0.1s
1s
10s
1.0
0
0.001 0.01
1
10
100
Drain to Source Voltage,VDS (V)
0.1
1
10
100
1000
Pulse Width (s)
Normalized Maximum Transient Thermal Impedance
10
Normalized Transient Thermal
Resistance,ZθJA
COSS
250
D=TON/T
TJ,PK=TA+PDM.ZθJA.θJA
θJA=40°С/W
In descending order
D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse
1
PDM
0.1
TO
N
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
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1
10
100
1000
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UT4422

Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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