Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT4800
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE

DESCRIPTION
The UT4800 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.

SYMBOL
Drain
Gate
Source

ORDERING INFORMATION
Ordering Number
Note:

UT4800G-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
1
S
2
S
Pin Assignment
3 4 5 6
S G D D
7
D
8
D
Packing
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R105-001.C
UT4800

Power MOSFET
PIN CONFIGURATION
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UT4800

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current (Note 1)
ID
6.5
A
Pulsed Drain Current (Note 1)
IDM
40
A
Power Dissipation
PD
1.3
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction-to-Ambient

SYMBOL
θJA
MIN
TYP
70
MAX
95
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0 V, ID =250 µA
VDS =24 V, VGS =0 V
VDS =0 V, VGS = ±20V
30
VGS(TH)
VDS =VGS, ID =250 µA
VGS =10 V, ID =9A
VGS =4.5 V, ID =7A
0.8
RDS(ON)
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=10V,VDS=15V, RL=15Ω,
RGEN=6Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDS =15V, VGS =5.0V,
Gate-Source Charge
QGS
ID =9A
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V, IS=2.3A
Maximum Body-Diode Continuous Current
IS
Body Diode Reverse Recovery Time
tRR
IF=2.3A, dI/dt=100A/μs
Notes: 1. Repetitive Rating : Pulse width limited by TJ
2. Pulse Test: Pulse width ≤ 300μs, Duty cycle 2% max.
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MIN
TYP
MAX
UNIT
1
±100
V
µA
nA
1.8
18.5
30
V
mΩ
mΩ
7
12
32
14
8.7
1.5
3.5
15
20
50
25
13
ns
ns
ns
ns
nC
nC
nC
0.75
1.2
2.3
60
V
A
ns
15.5
23
30
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Drain Current,ID (A)
TYPICAL CHARACTERISTICS
Drain Current,ID (A)

Power MOSFET
On-Resistance,RDS(ON) (mΩ)
0.040
Normalized On-Resistance,RDS(ON) (Ω)
On-Resistance vs. Drain Current and
Gate Voltage
0.032
VGS=4.5V
0.024
VGS=10V
0.016
0.008
0.000
5
10
15
20
Drain Current,ID (A)
25
30
1.6
On-Resistance vs. Junction Temperature
VGS=10V
ID=9A
1.4
1.2
1.0
0.8
0.6
-50 -25
0 25 50 75 100 125 150
Junction Temperature (℃)
Source Current, IS (A)
On-Resistance, RDS(ON) (mΩ)
0
1.8
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Gate-Charge Characteristics
VDS=15V
ID=9A
5
Capacitance Characteristics
1200
1000
Capacitance (pF)
Gate to Source Voltage,VGS (V)
6
4
3
2
CISS
800
600
400
COSS
200
1
CRSS
0
0
2
4
6
8
Gate Charge,QG (nC)
10
0
8
12
16
4
Drain to Source Voltage,VDS (V)
20
Power (W)
Variance,VGS(TH) (V)
0
100
Safe Operating Area,Junction-to-Foot
Drain Current, ID (A)
RDS(ON)
Limited
10
1ms
10ms
1
100ms
0.1
TC=25℃
Single Pulse
0.01
0.1
1
10
Drain to Source Voltage, VDS (V)
1s
10s
DC
100
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Normalized Thermal Transient Impedance,Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
D=0.5
0.2
0.1
t1
0.1
t2
0.05
1.Duty Cycle,D=t1/t2
2.Per Unit Base=RthJA=70℃/W
3.TJM-TA=PDMZthJA(t)
4.Surface Mounted
0.02
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (sec)
10
100
600
Capacitance (pF)
Reverse Drain Current Is(A)
Normalized Effective Transient
Thermal Impedance
0.01
10-4
PDM
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TYPICAL CHARACTERISTICS(Cont.)
Normalized Gate-Source Threshold
Voltage Vgs(th) (V)

Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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