UNISONIC TECHNOLOGIES CO., LTD UT4800 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SYMBOL Drain Gate Source ORDERING INFORMATION Ordering Number Note: UT4800G-S08-R Pin Assignment: G: Gate Package D: Drain SOP-8 S: Source 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R105-001.C UT4800 Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R105-001.C UT4800 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 1) ID 6.5 A Pulsed Drain Current (Note 1) IDM 40 A Power Dissipation PD 1.3 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Ambient SYMBOL θJA MIN TYP 70 MAX 95 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER STATIC PARAMETERS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate-Threshold Voltage Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =250 µA VDS =24 V, VGS =0 V VDS =0 V, VGS = ±20V 30 VGS(TH) VDS =VGS, ID =250 µA VGS =10 V, ID =9A VGS =4.5 V, ID =7A 0.8 RDS(ON) SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V,VDS=15V, RL=15Ω, RGEN=6Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDS =15V, VGS =5.0V, Gate-Source Charge QGS ID =9A Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V, IS=2.3A Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=2.3A, dI/dt=100A/μs Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. Pulse Test: Pulse width ≤ 300μs, Duty cycle 2% max. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 ±100 V µA nA 1.8 18.5 30 V mΩ mΩ 7 12 32 14 8.7 1.5 3.5 15 20 50 25 13 ns ns ns ns nC nC nC 0.75 1.2 2.3 60 V A ns 15.5 23 30 3 of 7 QW-R105-001.C UT4800 Drain Current,ID (A) TYPICAL CHARACTERISTICS Drain Current,ID (A) Power MOSFET On-Resistance,RDS(ON) (mΩ) 0.040 Normalized On-Resistance,RDS(ON) (Ω) On-Resistance vs. Drain Current and Gate Voltage 0.032 VGS=4.5V 0.024 VGS=10V 0.016 0.008 0.000 5 10 15 20 Drain Current,ID (A) 25 30 1.6 On-Resistance vs. Junction Temperature VGS=10V ID=9A 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 Junction Temperature (℃) Source Current, IS (A) On-Resistance, RDS(ON) (mΩ) 0 1.8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R105-001.C UT4800 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Gate-Charge Characteristics VDS=15V ID=9A 5 Capacitance Characteristics 1200 1000 Capacitance (pF) Gate to Source Voltage,VGS (V) 6 4 3 2 CISS 800 600 400 COSS 200 1 CRSS 0 0 2 4 6 8 Gate Charge,QG (nC) 10 0 8 12 16 4 Drain to Source Voltage,VDS (V) 20 Power (W) Variance,VGS(TH) (V) 0 100 Safe Operating Area,Junction-to-Foot Drain Current, ID (A) RDS(ON) Limited 10 1ms 10ms 1 100ms 0.1 TC=25℃ Single Pulse 0.01 0.1 1 10 Drain to Source Voltage, VDS (V) 1s 10s DC 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R105-001.C UT4800 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Normalized Thermal Transient Impedance,Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 t1 0.1 t2 0.05 1.Duty Cycle,D=t1/t2 2.Per Unit Base=RthJA=70℃/W 3.TJM-TA=PDMZthJA(t) 4.Surface Mounted 0.02 Single Pulse 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Capacitance (pF) Reverse Drain Current Is(A) Normalized Effective Transient Thermal Impedance 0.01 10-4 PDM UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R105-001.C UT4800 TYPICAL CHARACTERISTICS(Cont.) Normalized Gate-Source Threshold Voltage Vgs(th) (V) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R105-001.C