Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT6401
Power MOSFET
5A, 30V P-CHANNEL
ENHANCEMENT MODE
3

DESCRIPTION
2
SOT-23
The UTC UT6401 is P-channel enhancement mode Power
MOSFET, designed with high density cell, with fast switching
speed, low on-resistance, excellent thermal and electrical
capabilities, operation with low gate charge.
This device is suitable for use as a load switch or in PWM
applications.

6
5
4
1
2
3
SOT-26
ORDERING INFORMATION
Ordering Number
Note:

(SC-59)
SYMBOL

1
UT6401G-AE3-R
UT6401G-AG6-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23
SOT-26
1
S
D
Pin Assignment
2
3
4
5
G
D
D
G
S
D
6
D
Packing
Tape Reel
Tape Reel
S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-151.D
UT6401

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 2)
RATINGS
UNIT
-30
V
±12
-5
A
-20
SOT-23
1.38
Power Dissipation
PD
W
SOT-26
2
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
ID
IDM
THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)

SYMBOL
SOT-23
SOT-26
MIN
TYP
θJA
MAX
90
110
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance (Note 2)
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=-250uA
VDS=-24V, VGS=0V
VDS=0V, VGS=±12V
-30
VGS(TH)
ID(ON)
VDS=VGS, ID=-250uA
VDS=-5V, VGS=-4.5V
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
-0.7
-25
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=-15V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
Turn-ON Rise Time
tR
VDS=-15V, VGS=-10V,
RG=6Ω, RL=3Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
Total Gate Charge (Note 2)
QG
VDS=-15V, VGS=-4.5V,
Gate-Source Charge
QGS
ID=-5A
Gate-Drain Charge
QGD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
IS=-1A, VGS=0V
Maximum Continuous Drain-Source Diode
IS
Forward Current
MAXIMUN Body-Diode Pulsed Current
ISM
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤0.5%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNITS
-1
±100
-1
-1.3
42
53
81
49
64
119
V
uA
nA
V
A
mΩ
mΩ
mΩ
943
108
73
pF
pF
pF
6
3
40
11
9.5
2.1
2.9
ns
ns
ns
ns
nC
nC
nC
-0.75
-1
V
-5
A
-20
A
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QW-R502-151.D
UT6401
TYPICAL CHARACTERISTICS
Capacitance (pF)
On-Resistance, RDS(ON) (mΩ)
Drain Current, -ID (A)
Drain-Current, -ID (A)

Power MOSFET
On-Resistance vs. Gate-Source Voltage
1.0E+01
170
ID=-2A
130
110
90
125℃
70
50
30
1
0
Body-Diode Characteristics
1.0E+00
150
Source Current, -IS (A)
On-Resistance, RDS(ON) (mΩ)
190
25℃
1.0E-01
125℃
1.0E-02
1.0E-03
1.0E-04
25℃
1.0E-05
0
2
4
6
8
Gate-Source Voltage, -VGS (V)
10
UNISONIC TECHNOLOGIES CO., LTD
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1.0E-06
0.0
1.0
0.2
0.4
0.6
0.8
Source-Drain Voltage, -VSD (V)
1.2
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QW-R502-151.D
UT6401
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)

Gate-Charge Characteristics
40
VDS=-15V
ID=-5A
4
TJ(Max)=150℃
TA=25℃
30
Power (W)
Gate-Source Voltage, -VGS (V)
5
Single Pulse Power Rating Junction-toAmbient
3
2
20
10
1
0
2
4
6
8
10
Gate Charge, -QG (nC)
12
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Drain-Current, -ID (A)
Normalized Transient Thermal
Resistance,ZθJA
0
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QW-R502-151.D
UT6401
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
-0.8
Drain Current vs. Source to Drain Voltage
-12
Drain-Source On-State Resistance
Characteristics
-10
-0.6
Drain Current, ID (A)

-0.4
-0.2
-8
VGS=-10V
ID=-5A
-6
-4
VGS=-2.5V
ID=-1A
-2
0
0
-1
0
-0.1
-0.2
-0.4
-0.3
Drain to Source Voltage, VDS (V)
Drain Current, IDSS (µA)
-0.4
-0.6
-0.2
-0.8
Source to Drain Voltage,VSD (V)
Drain Current, ID (µA)
0
VGS=-4.5V
ID=-4A
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-151.D
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