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WBP3306
High Voltage Fast-Switching NPN Power Transistor
Features
■
■
■
Very high switching speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High
speed switching characteristics required such as
lighting system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Units
VCBO
Collect-Emitter Voltage
VBE=0
950
V
VCEO
Collector-Emitter Voltage
IB=0
400
V
VEBO
Emitter-Base Voltage
IC=0
12
V
IC
Collector Current
4
A
ICP
Collector pulse Current
8
A
PC
Total Dissipation at Tc=25℃
70
W
TJ
Operation Junction Temperature
150
℃
TSTG
Storage Temperature
-65~150
℃
Value
Units
(Note)
Thermal Characteristics
Symbol
Parameter
RӨJC
Thermal Resistance Junction to Case
1.8
℃/W
RӨJA
Thermal Resistance Junction to Ambient
62.5
℃/W
Rev.A03 Jun.2011
[email protected] Microelectronics Co., Ltd., All right reserved.
6
WBP330
BP3306
Electrical Characteristics (T =25℃ unless otherwise noted)
C
Symbol
Parameter
Test conditions
Value
Min
Typ
Max
Units
ICBO
Collector Cut-off Current
VCB=950V, Ie=0A
-
-
10
µA
ICEO
Collector Cut-off Current
VCE=400V, IB=0A
-
-
10
µA
BVCBO
Collector-Base Breakdown Voltage
Ic=0.5mA
950
-
-
V
BVCEO
Collector-Emitter Breakdown Voltage
Ic=5mA
400
-
-
V
BVEBO
Emitter-Base Breakdown Voltage
Ie=1mA
12
-
-
V
VCE(sat)1
Collector -Emitter Saturation Voltage
Ic=1A,Ib=0.2A
-
-
0.5
V
VCE(sat)2
Collector -Emitter Saturation Voltage
Ic=3.5A,Ib=1A
-
-
1.5
V
VBE(sat)1
Base -Emitter saturation Voltage
Ic=3.5A,Ib=1A
-
-
1.5
V
Vce=5V,Ic=0.1A
35
-
100
Vce=5V,Ic=0.5A
35
-
-
Vce=3V,Ic=0.8A
25
-
50
-
0.17
2
µs
-
-
6
µs
-
-
0.5
µs
hFE
DC Current Gain
tr
Rise Time
tSTG
Storage Time
tf
Fall Time
VCC=125V,IC=2A
IB1=-IB2=-0.4A
tP=300uS,VBE(OFF)=-5V
Note:
Pulsed duration=380µs,Duty cycle≤2%
2/6
Steady, keep you advance
6
WBP330
BP3306
Fig. 1 Static Characteristics
Fig. 2 DC Current Gain
Fig. 3 DC Current Gain
-Emitter Saturation Voltage
Fig. 5 Collector
Collector-Emitter
Fig. 4Power Derating
6Base
-Emitter Saturation Voltage
Fig.
Fig.6Base
6Base-Emitter
3/6
Steady, keep you advance
6
WBP330
BP3306
7 Reverse Bias SOA
Fig.
Fig.7
8 Safe Operation Area
Fig.
Fig.8
4/6
Steady, keep you advance
6
WBP330
BP3306
9 Inductive Load Switching & RBSOA Test Circuit
Fig.
Fig.9
10 Inductive Load Switching &RBSOA Test Circuit
Fig.
Fig.10
5/6
Steady, keep you advance
6
WBP330
BP3306
To220 Package Dimension
To-220
Unit:mm
6/6
Steady, keep you advance