AOT8N80/AOTF8N80 800V, 7.4A N-Channel MOSFET General Description Product Summary The AOT8N80 & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 900V@150℃ 7.4A RDS(ON) (at VGS=10V) < 1.63Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT8N80L & AOTF8N80L Top View TO-220 D TO-220F G G D AOT8N80 S G AOTF8N80 D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current S AOT8N80 VGS TC=25°C TC=100°C AOTF8N80 800 ±30 7.4 ID Units V V 7.4* 4.6 4.6* A Pulsed Drain Current C IDM 26 Avalanche Current C IAR 3.8 A Repetitive avalanche energy C EAR 217 mJ Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS dv/dt 433 5 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D PD 50 0.4 TJ, TSTG TL Symbol RθJA RθCS -55 to 150 W/ oC °C 300 °C AOT8N80 65 AOTF8N80 65 Units °C/W 0.5 0.51 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev0: Jun 2012 245 2.0 www.aosmd.com Page 1 of 6 AOT8N80/AOTF8N80 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 800 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C 900 V ID=250µA, VGS=0V 0.86 V/ oC VDS=800V, VGS=0V 1 VDS=640V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.9 4.5 nΑ V VGS=10V, ID=4A 1.35 1.63 Ω VDS=40V, ID=4A 9 1 V Maximum Body-Diode Continuous Current 7.4 A Maximum Body-Diode Pulsed Current 26 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge 3.3 S 0.72 1100 1375 1650 pF VGS=0V, VDS=25V, f=1MHz 70 101 132 pF 6 11 16 pF VGS=0V, VDS=0V, f=1MHz 1.7 3.5 5.3 Ω 26 32 nC SWITCHING PARAMETERS Total Gate Charge Qg Qgs ±100 µA 20 VGS=10V, VDS=640V, ID=8A 7.3 nC Qgd Gate Drain Charge 9.1 nC tD(on) Turn-On DelayTime 35 ns tr Turn-On Rise Time 51 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=8A,dI/dt=100A/µs,VDS=100V 380 484 585 Qrr Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V 4.5 6 7.5 Body Diode Reverse Recovery Time VGS=10V, VDS=400V, ID=8A, RG=25Ω 69 ns 41 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=3.8A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Jun 2012 www.aosmd.com Page 2 of 6 AOT8N80/AOTF8N80 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 100 10V VDS=40V 12 6.5V -55°C 10 125°C ID(A) ID (A) 9 6V 6 5.5V 1 3 25°C VGS=5V 0 0 5 10 15 20 25 0.1 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 3.0 8 10 Normalized On-Resistance 3 2.5 RDS(ON) (Ω) 6 VGS(Volts) Figure 2: Transfer Characteristics 2.0 VGS=10V 1.5 1.0 2 4 6 8 10 VGS=10V 2 1.5 1 0.5 0 -100 0.5 0 2.5 12 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1E+02 1E+0040 125°C IS (A) BVDSS (Normalized) 1E+01 1.1 1 1E-01 25°C 1E-02 1E-03 0.9 1E-04 0.8 -100 1E-05 -50 0 50 100 150 200 TJ (°C) Figure 5: Break Down vs. Junction Temperature Rev0: Jun 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT8N80/AOTF8N80 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=640V ID=8A 12 Ciss Capacitance (pF) VGS (Volts) 1000 9 6 Coss 100 Crss 10 3 1 0 0 8 16 24 32 0.1 40 Qg (nC) Figure 7: Gate-Charge Characteristics 10 100 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 10µs RDS(ON) limited 100µs 1 1ms DC 10ms 10µs RDS(ON) limited 10 ID (Amps) 10 ID (Amps) 1 100µs 1 1ms 10ms DC 0.1 0.1s 1s 0.1 TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT8N80 (Note F) 1 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF8N80 (Note F) 10 Current rating ID(A) 8 6 4 2 0 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) Rev0: Jun 2012 www.aosmd.com Page 4 of 6 AOT8N80/AOTF8N80 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.51°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 Ton T 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT8N80 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 Ton T 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF8N80 (Note F) Rev0: Jun 2012 www.aosmd.com Page 5 of 6 AOT8N80/AOTF8N80 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev0: Jun 2012 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6