Datasheet

AOT8N80/AOTF8N80
800V, 7.4A N-Channel MOSFET
General Description
Product Summary
The AOT8N80 & AOTF8N80 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new and
existing offline power supply designs.
VDS
ID (at VGS=10V)
[email protected]
7.4A
RDS(ON) (at VGS=10V)
< 1.63Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT8N80L & AOTF8N80L
Top View
TO-220
D
TO-220F
G
G
D
AOT8N80
S
G
AOTF8N80
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
S
AOT8N80
VGS
TC=25°C
TC=100°C
AOTF8N80
800
±30
7.4
ID
Units
V
V
7.4*
4.6
4.6*
A
Pulsed Drain Current C
IDM
26
Avalanche Current C
IAR
3.8
A
Repetitive avalanche energy C
EAR
217
mJ
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B
Derate above 25oC
EAS
dv/dt
433
5
mJ
V/ns
W
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
PD
50
0.4
TJ, TSTG
TL
Symbol
RθJA
RθCS
-55 to 150
W/ oC
°C
300
°C
AOT8N80
65
AOTF8N80
65
Units
°C/W
0.5
0.51
-2.5
°C/W
°C/W
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev0: Jun 2012
245
2.0
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Page 1 of 6
AOT8N80/AOTF8N80
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
800
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C
900
V
ID=250µA, VGS=0V
0.86
V/ oC
VDS=800V, VGS=0V
1
VDS=640V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
ISM
3.9
4.5
nΑ
V
VGS=10V, ID=4A
1.35
1.63
Ω
VDS=40V, ID=4A
9
1
V
Maximum Body-Diode Continuous Current
7.4
A
Maximum Body-Diode Pulsed Current
26
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
3.3
S
0.72
1100
1375
1650
pF
VGS=0V, VDS=25V, f=1MHz
70
101
132
pF
6
11
16
pF
VGS=0V, VDS=0V, f=1MHz
1.7
3.5
5.3
Ω
26
32
nC
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
±100
µA
20
VGS=10V, VDS=640V, ID=8A
7.3
nC
Qgd
Gate Drain Charge
9.1
nC
tD(on)
Turn-On DelayTime
35
ns
tr
Turn-On Rise Time
51
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=8A,dI/dt=100A/µs,VDS=100V
380
484
585
Qrr
Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V
4.5
6
7.5
Body Diode Reverse Recovery Time
VGS=10V, VDS=400V, ID=8A,
RG=25Ω
69
ns
41
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.8A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Jun 2012
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Page 2 of 6
AOT8N80/AOTF8N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
100
10V
VDS=40V
12
6.5V
-55°C
10
125°C
ID(A)
ID (A)
9
6V
6
5.5V
1
3
25°C
VGS=5V
0
0
5
10
15
20
25
0.1
30
2
4
VDS (Volts)
Fig 1: On-Region Characteristics
3.0
8
10
Normalized On-Resistance
3
2.5
RDS(ON) (Ω)
6
VGS(Volts)
Figure 2: Transfer Characteristics
2.0
VGS=10V
1.5
1.0
2
4
6
8
10
VGS=10V
2
1.5
1
0.5
0
-100
0.5
0
2.5
12
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1E+02
1E+0040
125°C
IS (A)
BVDSS (Normalized)
1E+01
1.1
1
1E-01
25°C
1E-02
1E-03
0.9
1E-04
0.8
-100
1E-05
-50
0
50
100
150
200
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
Rev0: Jun 2012
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT8N80/AOTF8N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=640V
ID=8A
12
Ciss
Capacitance (pF)
VGS (Volts)
1000
9
6
Coss
100
Crss
10
3
1
0
0
8
16
24
32
0.1
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100
10µs
RDS(ON)
limited
100µs
1
1ms
DC
10ms
10µs
RDS(ON)
limited
10
ID (Amps)
10
ID (Amps)
1
100µs
1
1ms
10ms
DC
0.1
0.1s
1s
0.1
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.01
0.01
1
10
100
1000
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT8N80 (Note F)
1
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF8N80 (Note F)
10
Current rating ID(A)
8
6
4
2
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev0: Jun 2012
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Page 4 of 6
AOT8N80/AOTF8N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.51°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT8N80 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF8N80 (Note F)
Rev0: Jun 2012
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Page 5 of 6
AOT8N80/AOTF8N80
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev0: Jun 2012
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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