Datasheet

AOTF10N50FD
500V, 10A N-Channel MOSFET with Fast Recovery Diode
General Description
Product Summary
The AOTF10N50FD has been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications. By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability this
part can be adopted quickly into new and existing offline
power supply designs.
VDS
ID (at VGS=10V)
[email protected]
10A
RDS(ON) (at VGS=10V)
< 0.75Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOTF10N50FDL
Top View
TO-220F
D
G
AOTF10N50FD
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
ID
AOTF10N50FD
500
Units
V
±30
V
10*
6*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
3.8
A
Repetitive avalanche energy C
EAR
216
mJ
433
5
50
mJ
V/ns
W
0.4
-55 to 150
W/ oC
°C
300
°C
AOT10N50FD
65
2.5
Units
°C/W
°C/W
Single pulsed avalanche energy G
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
PD
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
TL
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.1.0: July 2013
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33
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AOTF10N50FD
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=10mA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=10mA, VGS=0V, TJ=150°C
600
V
ID=10mA, VGS=0V
0.56
V/ oC
VDS=500V, VGS=0V
10
VDS=400V, TJ=125°C
100
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
±100
2.5
µA
3.1
4.2
nΑ
V
0.75
Ω
1.6
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5A
0.6
gFS
Forward Transconductance
VDS=40V, ID=5A
10
VSD
Diode Forward Voltage
IS=10A,VGS=0V
0.93
IS
Maximum Body-Diode Continuous Current
10
A
ISM
Maximum Body-Diode Pulsed Current
33
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
820
1030
1240
pF
75
112
150
pF
5
10
15
pF
1.7
3.4
5.2
Ω
26
35
nC
20
VGS=10V, VDS=400V, ID=10A
S
4.8
nC
Gate Drain Charge
9.5
nC
tD(on)
Turn-On DelayTime
24
ns
tr
Turn-On Rise Time
65
ns
69
ns
VGS=10V, VDS=250V, ID=10A,
RG=25Ω
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=10A,dI/dt=100A/µs,VDS=100V
116
190
Qrr
Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V
0.3
0.6
50
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.8A,
=2.3A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: July 2013
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AOTF10N50FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
25
-55°C
VDS=40V
20
10V
10
ID (A)
ID(A)
6.5V
15
6V
125°C
10
1
5.5V
25°C
5
VGS=5V
0.1
0
0
5
10
15
20
25
VDS (Volts)
Fig 1: On-Region Characteristics
2
30
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
2.0
Normalized On-Resistance
3
1.6
RDS(ON) (Ω)
4
1.2
VGS=10V
0.8
0.4
2.5
2
1.5
1
0.5
0.0
0
4
8
12
16
VGS=10V
ID=5A
0
-100
20
ID (A)
Figure 3: On-Resistance vs. Drain Current
and Gate Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1E+02
1E+00
125°C
1E-01
IS (A)
BVDSS (Normalized)
1E+01
1.1
1
1E-02
25°C
1E-03
0.9
1E-04
0.8
-100
1E-05
-50
0
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Rev.1.0: July 2013
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0.0
0.4
0.8
1.2
1.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOTF10N50FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
Capacitance (pF)
VGS (Volts)
Ciss
VDS=400V
ID=10A
12
9
6
1000
Coss
100
Crss
10
3
1
0
0
8
16
24
32
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
40
100
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
RDS(ON)
limited
10µs
100µs
1ms
1
10ms
0.1s
1s
DC
0.1
TJ(Max)=150°C
TC=25°C
Current rating ID(A)
12
10
ID (Amps)
1
10
8
6
4
2
0.01
0
1
10
100
1000
0
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOTF10N50FD (Note F)
25
50
75
100
125
TCASE (oC)
Figure 10: Current De-rating (Note B)
150
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
0.01
0.001
0.00001
Rev.1.0: July 2013
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF10N50FD (Note F)
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AOTF10N50FD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
VDS=100V
IF=10A
dI/dt=100A/µs
AOTF10N50FD
10
5
IF (A)
0
-5
-10
-15
-800
AOT9N50
-600
-400
-200
0
200
400
600
800
1000
1200
Trr (nS)
Figure 12: Diode Recovery Characteristics
Rev.1.0: July 2013
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Page 5 of 6
AOTF10N50FD
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.1.0: July 2013
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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