Reliability Report

AOS Semiconductor
Product Reliability Report
AOTF10N50FD,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
1
This AOS product reliability report summarizes the qualification result for AOTF10N50FD.
Accelerated environmental tests are performed on a specific sample size, and then followed by
electrical test at end point. Review of final electrical test result confirms that AOTF10N50FD
passes AOS quality and reliability requirements. The released product will be categorized by the
process family and be monitored on a quarterly basis for continuously improving the product
quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that
is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can
be adopted quickly into new and existing offline power supply designs.
Details refer to the datasheet.
II. Die / Package Information:
AOTF10N50FD
Standard sub-micron
500V, 10A N-Channel MOSFET with Fast Recovery Diode
Package Type
TO220F
Lead Frame
Bare Cu
Die Attach
Soft solder
Bonding
Al wire
Mold Material
Epoxy resin with silica filler
Moisture Level
Up to Level 1 *
Note * based on info provided by assembler and mold compound supplier
Process
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III. Result of Reliability Stress for AOTF10N50FD
Test Item
Test Condition
Time
Point
Lot
Attribution
Total
Sample
size
MSL
Precondition
168hr 85°c
/85%RH +3 cycle
reflow@260°c
Temp = 150°c ,
Vgs=100% of
Vgsmax
-
12 lots
2112pcs
0
JESD22A113
168hrs
500 hrs
1000 hrs
2 lots
3 lots
3 lots
616pcs
0
JESD22A108
HTRB
Temp = 150°c ,
Vds=80% of
Vdsmax
168hrs
500 hrs
1000 hrs
(Note A*)
2 lots
3 lots
3 lots
77 pcs / lot
616pcs
0
JESD22A108
HAST
130 , 85%RH,
33.3 psi, Vgs =
100% of Vgs max
96 hrs
(Note A*)
9 lots
77 pcs / lot
495pcs
0
JESD22A110
Pressure Pot
121°c , 29.7psi,
RH=100%
96 hrs
(Note A*)
9 lots
55 pcs / lot
693pcs
0
JESD22A102
(Note A*)
77 pcs / lot
0
JESD22A104
HTGB
Temperature
Cycle
-65°c to 150°c ,
air to air,
250 / 500
cycles
12 lots
(Note A*)
Number
of
Failures
924pcs
Reference
Standard
77 pcs / lot
Note A: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 5
MTTF = 23972 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOTF10N50FD). Failure Rate Determination is based on
JEDEC Standard JESD 85. FIT means one failure per billion hours.
2
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)]
9
= 1.83 x 10 / [2x (4x77x168 +6x77x500 +6x77x1000) x258] = 5
9
8
MTTF = 10 / FIT =2.10 x 10 hrs = 23972 years
Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
Af
258
87
32
13
5.64
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
130 deg C
150 deg C
2.59
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