Datasheet

AOTF10N90
900V, 10A N-Channel MOSFET
General Description
Product Summary
The AOTF10N90 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss
along with guaranteed avalanche capability this part can
be adopted quickly into new and existing offline power
supply designs.
VDS
ID (at VGS=10V)
[email protected]
10A
RDS(ON) (at VGS=10V)
< 0.98Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOTF10N90L
Top View
D
TO-220F
G
G
D
S
S
AOTF10N90
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
ID
AOTF10N90
900
Units
V
±30
V
10*
7*
A
Pulsed Drain Current C
IDM
38
Avalanche Current C
IAR
3.7
A
Repetitive avalanche energy C
EAR
205
mJ
410
5
50
mJ
V/ns
W
0.4
-55 to 150
W/ oC
°C
300
°C
AOTF10N90
65
2.5
Units
°C/W
°C/W
Single pulsed avalanche energy G
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
PD
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
TL
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev0: Oct 2012
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Page 1 of 5
AOTF10N90
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
900
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
V
0.9
V/ oC
VDS=900V, VGS=0V
1
VDS=720V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
ISM
±100
µA
4
4.5
nΑ
V
VGS=10V, ID=5A
0.82
0.98
Ω
VDS=40V, ID=5A
17
IS=1A,VGS=0V
0.7
1
V
Maximum Body-Diode Continuous Current
10
A
Maximum Body-Diode Pulsed Current
38
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
1000
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
3.4
S
2100
2630
3160
pF
VGS=0V, VDS=25V, f=1MHz
130
190
250
pF
10
18
26
pF
VGS=0V, VDS=0V, f=1MHz
1.5
3.4
5.2
Ω
45
60
75
nC
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=720V, ID=10A
Qgs
Gate Source Charge
13
nC
Qgd
tD(on)
Gate Drain Charge
27
nC
Turn-On DelayTime
64
tr
Turn-On Rise Time
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=10A,dI/dt=100A/µs,VDS=100V
460
575
700
Qrr
Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V
7.0
9.9
12.0
Body Diode Reverse Recovery Time
VGS=10V, VDS=450V, ID=10A,
RG=25Ω
105
ns
155
ns
84
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.7A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Oct 2012
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Page 2 of 5
AOTF10N90
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
100
-55°C
VDS=40V
20
10V
6.5V
10
15
125°C
ID(A)
ID (A)
6V
10
1
VGS=5.5V
25°C
5
0
0
5
10
15
20
25
0.1
30
2
4
VDS (Volts)
Fig 1: On-Region Characteristics
2.0
8
10
Normalized On-Resistance
3
1.6
RDS(ON) (Ω)
6
VGS(Volts)
Figure 2: Transfer Characteristics
1.2
VGS=10V
0.8
0.4
5
10
15
20
VGS=10V
ID=5A
2
1.5
1
0.5
0
-100
0.0
0
2.5
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1E+02
1E+0040
125°C
IS (A)
BVDSS (Normalized)
1E+01
1.1
1
1E-01
25°C
1E-02
1E-03
0.9
1E-04
0.8
-100
1E-05
-50
0
50
100
150
200
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
Rev0: Oct 2012
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AOTF10N90
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=720V
ID=10A
12
Ciss
Capacitance (pF)
VGS (Volts)
1000
9
6
Coss
100
Crss
10
3
1
0
0
15
30
45
60
75
0.1
90
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
100
12
10µs
RDS(ON)
limited
10
10
100µs
8
ID (Amps)
Current rating ID(A)
1
6
1ms
1
10ms
DC
4
0.1s
0.1
2
1s
TJ(Max)=150°C
TC=25°C
0
0
25
50
75
100
125
150
0.01
1
TCASE (°C)
Figure 9: Current De-rating (Note B)
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF10N90 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
T
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF10N90 (Note F)
Rev0: Oct 2012
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Page 4 of 5
AOTF10N90
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev0: Oct 2012
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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