Datasheet

AOTF11N62
620V,11A N-Channel MOSFET
General Description
Product Summary
The AOTF11N62 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss
along with guaranteed avalanche capability this device
can be adopted quickly into new and existing offline power
supply designs.
VDS
ID (at VGS=10V)
[email protected]
11A
RDS(ON) (at VGS=10V)
< 0.65Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOTF11N62L
Top View
D
TO-220F
G
AOTF11N62
D
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
AOTF11N62
Parameter
Symbol
Drain-Source Voltage
VDS
620
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
TC=100°C
C
AOTF11N62L
±30
11*
ID
Units
V
V
11*
8*
8*
A
IDM
39
Avalanche Current C
IAR
4.8
A
Repetitive avalanche energy C
EAR
345
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
EAS
dv/dt
690
5
mJ
V/ns
W
PD
TJ, TSTG
Junction and Storage Temperature Range
Maximum lead temperature for soldering
TL
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev 1: July 2012
50
39
0.4
0.3
-55 to 150
W/ oC
°C
300
°C
AOTF11N62
65
2.5
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AOTF11N62L
65
3.2
Units
°C/W
°C/W
Page 1 of 6
AOTF11N62
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
620
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
ID=250µA, VGS=0V, TJ=150°C
720
V
ID=250µA, VGS=0V
0.67
V/ oC
VDS=620V, VGS=0V
1
VDS=500V, TJ=125°C
10
±100
3.3
µA
3.9
4.5
nΑ
V
0.65
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.5A
0.56
gFS
Forward Transconductance
VDS=40V, ID=5.5A
12
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
11
A
ISM
Maximum Body-Diode Pulsed Current
39
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
S
0.73
1320
1656
1990
pF
100
146
195
pF
6.5
11.2
16
pF
1.7
3.5
5.3
Ω
24
30.6
37
VGS=10V, VDS=480V, ID=11A
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=11A,dI/dt=100A/µs,VDS=100V
400
500
600
Qrr
Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V
4.7
5.9
7.1
nC
9.6
nC
Gate Drain Charge
9.6
nC
Turn-On DelayTime
39
ns
58
ns
Body Diode Reverse Recovery Time
VGS=10V, VDS=300V, ID=11A,
RG=25Ω
92
ns
42
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.8A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: July 2012
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Page 2 of 6
AOTF11N62
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
100
10V
-55°C
VDS=40V
6.5V
16
10
ID(A)
ID (A)
12
6V
8
125°C
1
4
25°C
VGS=5.5V
0
0.1
0
5
10
15
20
25
30
2
4
VDS (Volts)
Fig 1: On-Region Characteristics
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
1.4
Normalized On-Resistance
3
1.2
RDS(ON) (Ω)
6
1.0
0.8
VGS=10V
0.6
4
8
12
16
20
VGS=10V
ID=5.5A
2
1.5
1
0.5
0
-100
0.4
0
2.5
24
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.2
40
1.0E+00
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
0.9
1.0E-04
0.8
-100
1.0E-05
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev1: July 2012
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOTF11N62
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=480V
ID=11A
12
Ciss
Capacitance (pF)
VGS (Volts)
1000
9
6
Coss
100
10
3
Crss
1
0
0
10
20
30
40
0.1
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100
10µs
10ms
TJ(Max)=150°C
TC=25°C
0.1s
1s
DC
0.01
100µs
RDS(ON)
limited
10
ID (Amps)
ID (Amps)
1ms
1
0.1
10µs
100µs
RDS(ON)
limited
10
1ms
1
10ms
TJ(Max)=150°C
TC=25°C
0.1
0.1s
1s
DC
0.01
1
10
100
1000
1
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOTF11N62 (Note F)
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF11N62L (Note F)
12
Current rating ID(A)
10
8
6
4
2
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Rev1: July 2012
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Page 4 of 6
AOTF11N62
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOTF11N62 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF11N62L (Note F)
Rev1: July 2012
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Page 5 of 6
AOTF11N62
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev1: July 2012
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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Page 6 of 6