Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTD351
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE

DESCRIPTION
As N-Channel Logic Level MOSFET, UTD351 has been
optimized for battery power management applications. And
it’s produced using UTC’s Trench process.


SYMBOL
ORDERING INFORMATION
Order Number
UTD351G-AE2-R
UTD351G-AE3-R
Note: Pin Assignment: G: Gate
D: Drain

Package
SOT-23-3
SOT-23
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
S: Source
MARKING
BCAG
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-154.C
UTD351

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
Continuous Drain Current (Note 3)
ID
1.4
A
Pulsed Drain Current
IDM
10
Power Dissipation
PD
0.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction-to-Ambient (Note 3)
Junction-to-Case

SYMBOL
θJA
θJC
MIN
TYP
250
75
MAX
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS (Note2)
Gate-Threshold Voltage
Static Drain–Source On–Resistance
SYMBOL
BVDSS
IDSS
IGSS
TEST CONDITIONS
VGS =0 V, ID =250 µA
VDS =24 V, VGS =0 V
VGS = ±20V, VDS = 0 V
MIN
RDS(ON)
VDS =VGS, ID =250 µA
VGS =10 V, ID =1.4 A
VGS =4.5 V, ID =1.2 A
1
±100
26
0.8
2.1
92
120
DYNAMIC PARAMETERS
145
Input Capacitance
CISS
Output Capacitance
COSS
35
VDS =15 V, VGS =0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
15
SWITCHING PARAMETERS (Note2)
Turn-ON Delay Time
tD(ON)
3
Turn-ON Rise Time
tR
8
VDD =15V, ID=1A, VGS =10V,
RGEN =6 Ω
Turn-OFF Delay Time
tD(OFF)
16
Turn-OFF Fall-Time
tF
2
1.3
Total Gate Charge
QG
Gate-Source Charge
QGS
0.5
VDS =15 V,VGS =4.5 V,ID =1.4 A
Gate-Drain Charge
QGD
0.5
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source
IS
Diode Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 0.42 A (Note 2)
0.8
Reverse Recovery Time
tRR
11
IF = 1.4 A, dIF/dt = 100 A/μs
Reverse Recovery Charge
QRR
4
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 250℃/W when mounted on min.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MAX UNIT
30
∆BVDSS/∆TJ ID=250μA, Referenced to 25°C
VGS(TH)
TYP
V
µA
nA
mV/℃
3
160
250
V
mΩ
pF
6
16
29
4
1.8
ns
nC
0.42
A
1.2
V
ns
nC
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On-Resistance,RDS(ON) (Ω)
Normalized Drain-Source OnResistance,RDS(ON)
Normalized Drain-Source OnResistance,RDS(ON)
Drain Current,ID (A)

Reverse Drain Current,IS (A)
Drain Current,ID (A)
UTD351
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
TYPICAL CHARACTERISTICS
QW-R502-154.C
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Normalized Effective Transient
Thermal Resistance,r(t)
Capacitance (pF)
Gate-Source Voltage,VGS (V)

Peak Transient Power,P(pk) (W)
Drain Current,ID (A)
UTD351
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
QW-R502-154.C
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UTD351
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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