Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTD420
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
„
FEATURES
* RDS(ON) = 28mΩ @VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
„
SYMBOL
2.Drain
*Pb-free plating product number: UTD420L
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UTD420-TN3-R
UTD420L-TN3-R
UTD420-TN3-T
UTD420L-TN3-T
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
1 of 6
QW-R502-188.A
UTD420
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
10
A
Pulsed Drain Current
IDM
30
A
Avalanche Current
IAR
15
A
Repetitive Avalanche Energy (L=0.1mH)
EAR
36
mJ
Power Dissipation (TC=25°C)
PD
60
W
Junction Temperature
TJ
+175
℃
Strong Temperature
TSTG
-55 ~ +175
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
SYMBOL
θJA
Junction-to-Ambient
„
MIN
TYP
40
MAX
50
UNIT
℃/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0 V, ID =250µA
VDS =24V, VGS =0 V
VDS =0 V, VGS = ±20V
30
VGS(TH)
ID(ON)
VDS =VGS, ID =250 µA
VDS =5V, VGS =4.5V
VGS =10V, ID =10A
VGS =4.5V, ID =7A
1
40
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =15 V, VGS =0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS =15V, VGS =10V, ID =10A
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VGS=10V,VDS=15V,RL=1.5Ω,
Turn-ON Rise Time
tR
RGEN =3Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1A,VGS=0V
Maximum Continuous Drain-Source
IS
Diode Forward Current
Body Diode Reverse Recovery Time
tRR
IF=10 A, dI/dt=100A/µs
Body Diode Reverse Recovery
QRR
IF=10 A, dI/dt=100A/µs
Charge
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle 0.5% max.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
UNIT
1
100
V
µA
nA
1.8
3
21
32.5
28
42
710
120
72
850
pF
pF
pF
14.4
2.6
2.7
5.6
2.4
15.6
2.2
18
nC
nC
nC
ns
ns
ns
ns
0.75
1
V
10
A
21
ns
13.4
4.4
V
A
mΩ
mΩ
nC
2 of 5
QW-R502-188.A
Normalized On-Resistance
Drain to Source OnResistance,RDS(ON) (mΩ)
Drain Current,ID (A)
Drain Current,ID (A)
„
Reverse Drain Current,IS (A)
Drain to Source OnResistance,RDS(ON) (mΩ)
UTD420
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
TYPICAL CHARACTERISTICS
QW-R502-188.A
3 of 5
UTD420
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance (pF)
Gate to Source Voltage,VGS (V)
„
Drain Current,ID (A)
RDS(ON)
Limited
1ms
100μs
10ms
1s
10s
1.0
TJ(Max)=150℃
TA=25℃
40
30
20
DC
1
10
Drain to Source Voltage,VDS (V)
TJ(Max)=150℃
TA=25℃
10
100
0
0.001 0.01
1
10
0.1
Pulse Width (s)
100
1000
Normalized Transient Thermal
Resistance,ZθJA
0.1
0.1
Single Pulse Power Rating Junctionto-Ambient (Note F)
50
10μs
0.1s
10.0
60
Power (W)
100.0
Maximum Forward Biased Safe
Operating Area (Note F)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-188.A
UTD420
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-188.A
Similar pages