INTERSIL HGTG27N120BN

HGTG27N120BN
Data Sheet
January 2000
72A, 1200V, NPT Series N-Channel IGBT
Features
The HGTG27N120BN is a Non-Punch Through (NPT) IGBT
design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.
• 72A, 1200V, TC = 25oC
File Number
4482.3
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49280.
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com
• Avalanche Rated
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
HGTG27N120BN
TO-247
E
BRAND
C
G
G27N120BN
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
HGTG27N120BN
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGTG27N120BN
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
1200
V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
72
34
216
±20
±30
150A at 1200V
500
4.0
135
-55 to 150
260
8
15
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by Max junction temperature.
2. ICE = 30A, L = 400µH, TJ = 125oC
3. VCE(PK) = 960V, TJ = 125oC, RG = 3Ω.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
1200
-
-
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
15
-
-
V
TC = 25oC
-
-
250
µA
TC = 125oC
-
300
-
µA
TC = 150oC
-
-
4
mA
TC = 25oC
-
2.45
2.7
V
TC = 150oC
-
3.8
4.2
V
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
ICES
VCE(SAT)
VCE = BVCES
IC = IC110 ,
VGE = 15V
IC = 250µA, VCE = VGE
6
6.6
-
V
Gate to Emitter Leakage Current
IGES
VGE = ±20V
-
-
±250
nA
Switching SOA
SSOA
TJ = 150oC, RG = 3Ω, VGE = 15V,
L = 200µH, VCE(PK) = 1200V
150
-
-
A
Gate to Emitter Plateau Voltage
VGEP
IC = IC110 , VCE = 0.5 BVCES
-
9.2
-
V
IC = IC110 ,
VCE = 0.5 BVCES
VGE = 15V
-
270
325
nC
VGE = 20V
-
350
420
nC
Gate to Emitter Threshold Voltage
On-State Gate Charge
VGE(TH)
QG(ON)
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
IGBT and Diode at TJ = 25oC,
ICE = IC110 ,
VCE = 0.8 BVCES ,
VGE = 15V,
RG = 3Ω,
L = 1mH,
Test Circuit (Figure 18)
-
24
30
ns
-
20
25
ns
-
195
240
ns
-
80
120
ns
-
2.2
-
mJ
Turn-On Energy (Note 5)
EON1
Turn-On Energy (Note 5)
EON2
-
2.7
3.3
mJ
Turn-Off Energy (Note 4)
EOFF
-
2.3
2.8
mJ
2
HGTG27N120BN
TC = 25oC, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
TEST CONDITIONS
MIN
IGBT and Diode at TJ = 150oC,
ICE = IC110 ,
VCE = 0.8 BVCES ,
VGE = 15V,
RG = 3Ω,
L = 1mH,
Test Circuit (Figure 18)
TYP
MAX
UNITS
-
22
28
ns
-
20
25
ns
-
220
280
ns
-
140
200
ns
-
2.7
-
mJ
mJ
Turn-On Energy (Note 5)
EON1
Turn-On Energy (Note 5)
EON2
-
5.1
6.5
Turn-Off Energy (Note 4)
EOFF
-
3.4
4.2
mJ
0.25
oC/W
Thermal Resistance Junction To Case
-
RθJC
-
NOTES:
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.
Unless Otherwise Specified
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
80
VGE = 15V
70
60
50
40
30
20
10
0
25
50
75
100
125
200
TJ = 150oC, RG = 3Ω, VGE = 15V, L = 200µH
160
120
80
40
0
150
0
TC , CASE TEMPERATURE (oC)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX, OPERATING FREQUENCY (kHz)
TC
VGE
15V
12V
50
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.25oC/W, SEE NOTES
TC
VGE
110oC
110oC
15V
12V
1
5
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
3
600
800
1000
1200
1400
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TJ = 150oC, RG = 3Ω, L = 1mH, V CE = 960V
75oC
75oC
400
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
100
200
60
50
500
VCE = 960V, RG = 3Ω, TJ = 125oC
ISC
40
400
30
300
20
200
tSC
10
0
11
100
12
13
14
15
0
16
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
ISC, PEAK SHORT CIRCUIT CURRENT (A)
Typical Performance Curves
HGTG27N120BN
140
Unless Otherwise Specified (Continued)
DUTY CYCLE <0.5%, VGE = 12V
250µs PULSE TEST
120
100
TC = 150oC
TC = 25oC
TC = -55oC
80
60
40
20
0
0
2
4
6
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
DUTY CYCLE <0.5%, VGE = 15V
250µs PULSE TEST
160
120
TC = -55oC
TC = 150oC
80
40
0
0
2
4
6
8
10
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
15.0
6
EOFF, TURN-OFF ENERGY LOSS (mJ)
RG = 3Ω, L = 1mH, VCE = 960V
12.5
TJ = 150oC, VGE = 12V, VGE = 15V
10.0
7.5
5.0
2.5
TJ = 25oC, VGE = 12V, VGE = 15V
RG = 3Ω, L = 1mH, VCE = 960V
5
TJ = 150oC, VGE = 12V OR 15V
4
3
5
10
15
20
25
30
35
40
45
50
55
60
TJ = 25oC, VGE = 12V OR 15V
2
1
0
0
5
10
15
20
25
30
35
40
45
50
55
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
40
80
RG = 3Ω, L = 1mH, VCE = 960V
RG = 3Ω, L = 1mH, VCE = 960V
70
35
trI , RISE TIME (ns)
tdI , TURN-ON DELAY TIME (ns)
TC = 25oC
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
EON2 , TURN-ON ENERGY LOSS (mJ)
200
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
50
TJ = 25oC, TJ = 150oC, VGE = 12V
40
30
20
20
TJ = 25oC, TJ = 150oC, VGE = 15V
15
60
5
10
15
20
25
30
35
40
45
50
55
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
4
TJ = 25oC, TJ = 150oC, VGE = 15V
10
60
0
5
10
15
20
25
30
35
40
45
50
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
55
60
HGTG27N120BN
Typical Performance Curves
Unless Otherwise Specified (Continued)
250
RG = 3Ω, L = 1mH, VCE = 960V
RG = 3Ω, L = 1mH, VCE = 960V
350
200
VGE = 12V, VGE = 15V, TJ = 150oC
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
400
300
VGE = 12V, VGE = 15V, TJ = 25oC
250
200
150
150
TJ = 150oC, VGE = 12V OR 15V
100
TJ = 25oC, VGE = 12V OR 15V
50
5
10
15
20
25
30
35
40
45
50
55
0
60
5
16
DUTY CYCLE <0.5%, VCE = 20V
250µs PULSE TEST
300
250
200
150
TC = 25oC
100
TC = -55oC
TC = 150oC
50
0
7
8
9
10
12
13
11
VGE, GATE TO EMITTER VOLTAGE (V)
14
4
CRES
COES
10
15
20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
5
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
C, CAPACITANCE (nF)
6
5
35
40
45
50
55
60
VCE = 1200V
12
10
8
VCE = 800V
VCE = 400V
6
4
2
0
50
100
150
200
250
300
FIGURE 14. GATE CHARGE WAVEFORMS
CIES
0
30
QG , GATE CHARGE (nC)
FREQUENCY = 1MHz
0
25
14
0
15
10
2
20
IG(REF) = 2mA, RL = 22.2Ω, TC = 25oC
FIGURE 13. TRANSFER CHARACTERISTIC
8
15
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
350
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
40
DUTY CYCLE <0.5%, TC = 110oC
35 250µs PULSE TEST
30
25
VGE = 10V
VGE = 15V
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
HGTG27N120BN
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified (Continued)
100
0.5
0.2
10-1
0.1
0.05
t1
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
PD
t2
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRP30120
90%
10%
VGE
EON2
EOFF
L = 1mH
VCE
RG = 3Ω
90%
+
-
ICE
VDD = 960V
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
6
FIGURE 19. SWITCHING TEST WAVEFORMS
HGTG27N120BN
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2 ; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 19. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in
the calculation for EOFF; i.e., the collector current equals
zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
7
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.