Data Sheet LC016D Rev.1.4

Product Family Data Sheet
Rev. 1.4 2016.06.01
High Voltage LED Series
Chip on Board
LC016D
High efficacy COB LED package
well-suited for use in spotlight applications
Features & Benefits
• Chip on Board (COB) solution makes it easy to design in
• Simple assembly reduces manufacturing cost
• Low thermal resistance
• InGaN/GaN MQW LED with long time reliability
Applications
• Spotlight / Downlight
• LED Retrofit Bulbs
• Outdoor Illumination
1#
2
Table of Contents
1.
Characteristics
-----------------------
3
2.
Product Code Information
-----------------------
5
3.
Typical Characteristics Graphs
-----------------------
9
4.
Outline Drawing & Dimension
-----------------------
12
5.
Reliability Test Items & Conditions
-----------------------
13
6.
Label Structure
-----------------------
14
7.
Packing Structure
-----------------------
15
8.
Precautions in Handling & Use
-----------------------
17
3
1. Characteristics
a) Absolute Maximum Rating
Item
Symbol
Rating
Unit
Condition
Ambient / Operating Temperature
Ta
-40 ~ +105
ºC
-
Storage Temperature
Tstg
-40 ~ +120
ºC
-
LED Junction Temperature
TJ
140
ºC
-
Case Temperature
Tc
Forward Current
IF
810
mA
-
Power Dissipation
PD
43.1
W
-
ESD (HBM)
-
±2
kV
-
ESD (MM)
-
±0.5
kV
-
b) Electro-optical Characteristics
(IF = 450 mA, TJ = 85 ºC)
Item
Unit
Rank
Min.
Typ.
Max.
Forward Voltage (VF)
V
YZ
31.8
34.6
37.5
5
80
-
-
Color Rendering Index (Ra)
7
90
Thermal Resistance (junction to chip point)
ºC/W
-
1.1
-
Beam Angle
º
-
115
-
Nominal Power
W
16.9
Notes:
1) The COB is tested in pulsed condition at rated test current (10 ms pulse width) and rated temperature (TJ = TC = Ta = 85 °C)
2) Samsung maintains measurement tolerance of:
forward voltage = ±5 %, CRI = ±1
3) Refer to the derating curve, ‘3. Typical Characteristics Graph’ designed within the range.
4
c) Luminous Flux Characteristics
CRI (Ra)
Min.
(IF = 450 mA)
Nominal
CCT (K)
Flux
Rank
Flux
Bin
H9
Flux @ TJ = 85 °C (lm)
Min.
Typ.
Max.
H9
1962
2065
-
D1
D1
2065
2169
-
J0
J0
2073
2182
-
D1
D1
2182
2291
-
J1
J1
2150
2263
-
D1
D1
2263
2376
-
J1
J1
2189
2304
-
D1
D1
2304
2419
-
J2
J2
2208
2324
-
D1
D1
2324
2440
-
J2
J2
2208
2324
-
D1
D1
2324
2440
-
J1
J1
2189
2304
-
D1
D1
2304
2419
-
Flux
Rank
Flux
Bin
H6
2700
3000
3500
80
4000
5000
5700
6500
CRI (Ra)
Min.
Nominal
CCT (K)
Flux @ TJ = 85 °C (lm)
Min.
Typ.
Max.
H6
1683
1771
-
D1
D1
1771
1860
-
H7
H7
1783
1877
-
D1
D1
1877
1970
-
H8
H8
1836
1932
-
D1
D1
1932
2029
-
H8
H8
1872
1971
-
D1
D1
1971
2069
-
2700
90
3000
3500
4000
Notes:
1)
The COB is tested in pulsed operating condition at rated test current (10 ms pulse width) and rated temperature
(TJ = TC = 85 °C).
2) Samsung maintains measurement tolerance of: Luminous flux = ±7 %, CRI = ±1
5
2. Product Code Information
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
S
P
H
W
H
A
H
D
N
E
2
5
Y
Z
W
3
H
9
Digit
PKG Information
Code
Samsung Package High Power
SPH
Color
WH
Product Version
A
Form Factor
HD
9
Lens Type
N
No lens
10
Internal Code
E
LC016D
11
Chip Type
2
12
CRI & Sorting Temperature
1 2
3
4 5
6
7 8
13
14
15
CCT (K)
16
17
Forward Voltage (V)
Specification
Warm White
COB
5
Min. 80
(85℃)
7
Min. 90
(85℃)
YZ
31.8~37.5
W
2700K
V
3000K
U
3500K
T
4000K
R
5000K
Q
5700K
P
6500K
2
MacAdam 2-step
3
MacAdam 3-step
MacAdam Step
18
Luminous Flux (Lm)
H6
Min. 1600
H7
Min. 1700
H8
Min. 1800
H9
Min. 1900
J0
Min. 2000
J1
J2
D1
Min. 2100
Min. 2200
Add rank
6
a) Binning Structure
CRI (Ra)
Min.
(IF = 450 mA, TJ = 85 ºC)
Nominal
CCT (K)
Color
Rank
Chrom.
Bin
SPHWHAHDNE25YZW2H9
W2
W2
SPHWHAHDNE25YZW3H9
W3
W3
SPHWHAHDNE25YZW2D1
W2
W2
SPHWHAHDNE25YZW3D1
W3
W3
SPHWHAHDNE25YZV2J0
V2
V2
SPHWHAHDNE25YZV3J0
V3
V3
SPHWHAHDNE25YZV2D1
V2
V2
SPHWHAHDNE25YZV3D1
V3
V3
SPHWHAHDNE25YZU2J1
U2
U2
SPHWHAHDNE25YZU3J1
U3
U3
SPHWHAHDNE25YZU2D1
U2
U2
SPHWHAHDNE25YZU3D1
U3
U3
SPHWHAHDNE25YZT2J1
T2
T2
SPHWHAHDNE25YZT3J1
T3
T3
SPHWHAHDNE25YZT2D1
T2
T2
SPHWHAHDNE25YZT3D1
T3
T3
R3
R3
Product Code
Flux
Rank
Flux Range
(Φv, lm)
H9
1962 ~
D1
2065 ~
J0
2073 ~
D1
2182 ~
J1
2150 ~
D1
2263 ~
J1
2189 ~
D1
2324 ~
J2
2208 ~
D1
2324 ~
J2
2208 ~
D1
2324 ~
J1
2189 ~
D1
2304 ~
YZ
2700
80
VF
Rank
3000
YZ
3500
YZ
4000
YZ
SPHWHAHDNE25YZR3J2
5000
YZ
SPHWHAHDNE25YZR3D1
SPHWHAHDNE25YZQ3J2
5700
YZ
Q3
Q3
SPHWHAHDNE25YZQ3D1
SPHWHAHDNE25YZP3J1
6500
YZ
SPHWHAHDNE25YZP3DD1
P3
P3
7
CRI (Ra)
Min.
Nominal
CCT (K)
Color
Rank
Chrom.
Bin
SPHWHAHDNE27YZW2H6
W2
W2
SPHWHAHDNE27YZW3H6
W3
W3
SPHWHAHDNE27YZW2D1
W2
W2
SPHWHAHDNE27YZW3D1
W3
W3
SPHWHAHDNE27YZV2H7
V2
V2
SPHWHAHDNE27YZV3H7
V3
V3
SPHWHAHDNE27YZV2D1
V2
V2
SPHWHAHDNE27YZV3D1
V3
V3
SPHWHAHDNE27YZU2H8
U2
U2
SPHWHAHDNE27YZU3H8
U3
U3
SPHWHAHDNE27YZU2D1
U2
U2
SPHWHAHDNE27YZU3D1
U3
U3
SPHWHAHDNE27YZT2H8
T2
T2
SPHWHAHDNE27YZT3H8
T3
T3
SPHWHAHDNE27YZT2D1
T2
T2
SPHWHAHDNE27YZT3D1
T3
T3
Product Code
2700
VF
Rank
Flux
Rank
Flux Range
(Φv, lm)
H6
1683 ~
D1
1771 ~
H7
1783 ~
D1
1877 ~
H8
1836 ~
D1
1932 ~
H8
1872 ~
D1
1971 ~
YZ
90
3000
YZ
3500
YZ
4000
YZ
8
b) Chromaticity Region & Coordinates
(IF = 450 mA, TJ = 85 ºC)
θ
CIE x,y
MacAdam Ellipse (W2, W3)
MacAdam Ellipse (V2, V3)
Step
CIE x
CIE y
θ
a
b
Step
CIE x
CIE y
θ
a
b
2-step
0.4578
0.4101
53.70
0.0054
0.0028
2-step
0.4338
0.403
53.22
0.0056
0.0027
3-step
0.4578
0.4101
53.70
0.0081
0.0042
3-step
0.4338
0.4030
53.22
0.0083
0.0041
Step
CIE x
CIE y
θ
a
b
Step
CIE x
CIE y
θ
a
b
2-step
0.4073
0.3917
54.00
0.0062
0.0028
2-step
0.3818
0.3797
53.72
0.0063
0.0027
3-step
0.4073
0.3917
54.00
0.0093
0.0041
3-step
0.3818
0.3797
53.72
0.0094
0.0040
MacAdam Ellipse (U2, U3)
MacAdam Ellipse (T2, T3)
MacAdam Ellipse (R3)
MacAdam Ellipse (Q3)
Step
CIE x
CIE y
θ
a
b
Step
CIE x
CIE y
θ
a
b
3-step
0.3447
0.3553
59.62
0.0082
0.0035
3-step
0.3287
0.3417
59.0950
0.0075
0.0032
MacAdam Ellipse (P3)
Step
CIE x
CIE y
θ
a
b
3-step
0.3123
0.3282
58.5700
0.0067
0.0029
Note:
Samsung maintains measurement tolerance of:
Cx, Cy = ±0.005
9
3. Typical Characteristics Graphs
a) Spectrum Distribution
(IF = 450 mA, TJ = 85 ºC)
CCT: 2700 K (80 CRI)
CCT: 3000 K (80 CRI)
Relative Intensity vs. Wavelength
100
80
60
40
20
0
400
500
600
700
800
Relative Emission Intensity(%)
Relative Emission Intensity(%)
Relative Intensity vs. Wavelength
100
80
60
40
20
0
400
500
Wavelength
CCT: 3500 K (80 CRI)
60
40
20
0
500
600
700
800
Relative Emission Intensity(%)
Relative Emission Intensity(%)
80
100
80
60
40
20
0
400
500
Wavelength
600
700
800
Wavelength
CCT: 5000 K (80 CRI)
CCT: 5700 K (80 CRI)
Relative Intensity vs. Wavelength
100
80
60
40
20
0
500
600
Wavelength
700
800
Relative Emission Intensity(%)
Relative Intensity vs. Wavelength
Relative Emission Intensity(%)
800
Relative Intensity vs. Wavelength
100
400
700
CCT: 4000 K (80 CRI)
Relative Intensity vs. Wavelength
400
600
Wavelength(nm)
100
80
60
40
20
0
400
500
600
Wavelength
700
800
10
CCT: 6500 K (80 CRI)
Relative Emission Intensity(%)
Relative Intensity vs. Wavelength
100
80
60
40
20
0
400
500
600
700
800
Wavelength
b) Forward Current Characteristics
(TJ = 85 ºC)
Forward Voltage vs. Forward Current
400
45
Forward Voltage(%)
Relative Luminous Flux(%)
Relative luminous Flux vs. Forward Current
300
200
100
0
40
35
30
0
0.5
1
0
0.5
Forward Current(A)
1
Forward Current(A)
C) Temperature Characteristics (IF = 450mA)
Forward Voltage vs. Temperature
105
36.5
Forward Voltage(V)
Relative Luminous Flux(%)
Relative Luminous Flux vs. Temperature
100
95
90
85
36.0
35.5
35.0
34.5
34.0
33.5
33.0
80
20
40
60
Tc(℃)
80
100
20
40
60
Tc(℃)
80
100
11
d) Color Shift Characteristics (TJ = 85 ºC,
△CIE x,△CIE y
IF = 450mA,
CRI80+)
vs. Forward Current
△CIEx,△CIEy vs. Temperature
0
△CIE x,△ CIE y
△CIE x,△ CIE y
0
-0.01
-0.02
-0.03
△CIE x
-0.04
△ CIE y
0.30
0.60
0.90
1.20
-0.03
ΔCIE x
-0.04
ΔCIE y
e) Beam Angle Characteristics
(IF = 450 mA, TJ = 85 ºC)
1.2
1
0.8
0.6
0.4
0.2
0
-100 -80 -60 -40 -20 0
20 40 60 80 100
Angle(°)
f) Derating Characteristics
Derating Curve
1000
800
600
400
200
0
0
20
40
60
Tc [ ℃ ]
80
20
40
60
Tc(℃)
Forward Current(A)
Relative Luminous Intensity
-0.02
-0.05
-0.05
0.00
If [ mA ]
-0.01
100
120
80
100
12
4. Outline Drawing & Dimension
Tc
1. Unit:
mm
2. Tolerance: ± 0.3 mm
Note:
Item
Dimension
Tolerance
Unit
Length
19.0
±0.15
mm
Width
19.0
±0.15
mm
Height
1.50
±0.30
mm
Light Emitting Surface (LES) Diameter
14.5
±0.15
mm
Denoted product information above is only an example
( LC016D, CRI80+, 3000K )
13
5. Reliability Test Items & Conditions
a) Test Items
Test Item
Test Condition
Test Hour / Cycle
High Temperature
Humidity Life Test
60 ºC, 90 % RH,, DC Derating, IF
1000 h
High Temperature
Life Test
85 ºC, DC Derating, IF
1000 h
Low Temperature
Life Test
-40 ºC, DC , IF = 810 mA
1000 h
Pulsed Operating Life Test
55 ℃, Pulse width 100 ㎲, duty cycle 3 %
1000 h
High Temperature
Storage
120 ºC
1000 h
Low Temperature
Storage
-40 ºC
1000 h
Temperature Humidity
Storage
60 ºC, 90% RH
1000h
Temperature Cycle
On/Off Test
-40 ºC / 85 ºC each 20 min, 30 min transfer
power on/off each 5 min, DC Derating, IF = max
100 cycles
R1: 10 MΩ
R2: 1.5 kΩ
C: 100 pF
V: ±2 kV
ESD (HBM)
5 times
R1: 10 MΩ
R2: 0 kΩ
C: 200 pF
ESD (MM)
5 times
V: ±0.2 kV
Vibration Test
20 ~ 80 Hz (displacement: 0.06 inch, max. 20 g)
80 ~ 2 kHz (max. 20 g)
min. frequency ↔ max. frequency 4 min transfer
4 times
Mechanical Shock Test
1500 g, 0.5 ms
each of the 6 surfaces (3 axis x 2 sides)
5 times
Sulfur Resistance
25 °C,
75%, H2S 15 ppm
504h
b) Criteria for Judging the Damage
Item
Symbol
Test Condition
(Tc = 25 ºC)
Forward Voltage
VF
Luminous Flux
Φv
6. Label Structure
Limit
Min.
Max.
IF = 450 mA
L.S.L. * 0.9
U.S.L. * 1.1
IF = 450 mA
L.S.L * 0.7
U.S.L * 1.3
14
a) Label Structure
ⓐⓑⓒⓓⓔⓕ
YZW3H9
Bin Code
SPHWHAHDNE25YZW3H9 YZW3H9 01
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
Product Code
G4AZC4001 / 1001 / xxxx pcs
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
Lot Number
Note:
Denoted bin code and product code above is only an example (see description on page 5)
Bin Code:
ⓐⓑ:
Forward Voltage bin
ⓒⓓ:
Chromaticity bin
ⓔⓕ:
Luminous Flux bin
(refer to page 11)
(refer to page 9-10)
(refer to page 6)
b) Lot Number
The lot number is composed of the following characters:
YZW3H9
SPHWHAHDNE25YZW3H9 YZW3H9 01
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
①②③④⑤⑥⑦⑧⑨/1ⓐⓑⓒ/ xxxx pcs
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
①
③④⑤⑥⑦⑧⑨ / 1ⓐⓑⓒ / xxxx pcs
①
②
③
④
⑤
⑥⑦⑧⑨
ⓐⓑⓒ
:
Production site
(S: Giheung, Korea,
:
4
:
Product state
:
Year
:
Month
:
Day (1~9, A, B~V)
:
Product serial number (001 ~ 999)
G: Tianjin, China)
(LED)
(A: Normal, B: Bulk, C: First Production, R: Reproduction, S: Sample)
(Z: 2015, A: 2016, B: 2017…)
(1~9, A, B, C)
15
6.
Packing Structure
Packing material
Tray
Aluminum Bag
Inner Box
Outer Box
Max. quantity
in pcs of COB
20
40(2 trays)
160
1600
Length
160
210
230
476
Dimension(mm)
Width
180
241
84
445
a) Packing Structure
Label
Label
Height
10
260
272
Tolerance
1.0
10
2
5
16
b) Tray
① Cover
c) Aluminum Vinyl Packing Bag
② Body
17
8.
Precautions in Handling & Use
1)
This device should not be used in any type of fluid such as water, oil, organic solvent, etc. When cleaning is required, IPA
is recommended as the cleaning agent. Some solvent-based cleaning agent may damage the silicone resins used in the
device.
2)
LEDs must be stored in a clean environment. If the LEDs are to be stored for three months or more after being shipped
from Samsung, they should be packed with a nitrogen-filled container (shelf life of sealed bags is 12 months at
temperature 0~40 ºC, 0~90 % RH).
3)
After storage bag is opened, device subjected to soldering, solder reflow, or other high temperature processes must be:
a. Mounted within 672 hours (28 days) at an assembly line with a condition of no more than 30 ºC / 60 % RH, or
b. Stored at <10 % RH
4)
Repack unused products with anti-moisture packing, fold to close any opening and then store in a dry place.
5)
Devices require baking before mounting, if humidity card reading is >60 % at 23 ± 5 ºC.
6)
Devices must be baked for 1 hour at 60 ± 5 ºC, if baking is required.
7)
The LEDs are sensitive to the static electricity and surge current. It is recommended to use a wrist band or antielectrostatic glove when handling the LEDs. If voltage exceeding the absolute maximum rating is applied to LEDs, it may
cause damage or even destruction to LED devices. Damaged LEDs may show some unusual characteristics such as
increase in leakage current, lowered turn-on voltage, or abnormal lighting of LEDs at low current.
8)
VOCs (Volatile Organic Compounds) can be generated from adhesives, flux, hardener or organic additives used in
luminaires (fixtures). Transparent LED silicone encapsulant is permeable to those chemicals and they may lead to a
discoloration of encapsulant when they exposed to heat or light. This phenomenon can cause a significant loss of light
emitted (output) from the luminaires. In order to prevent these problems, we recommend users to know the physical
properties of materials used in luminaires and they must be carefully selected.
9)
The resin area is very sensitive, please do not handle, press, touch, rub, clean, or pick by with tweezers on it. Instead,
please pick at the handling area as indicated below.
Legal and additional information.
About Samsung Electronics Co., Ltd.
Samsung Electronics Co., Ltd. inspires the world and shapes the future
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www.samsung.com and our official blog at global.samsungtomorrow.com.
Copyright © 2015 Samsung Electronics Co., Ltd. All rights reserved.
Samsung is a registered trademark of Samsung Electronics Co., Ltd.
Specifications and designs are subject to change without notice. Non-metric
weights and measurements are approximate. All data were deemed correct
at time of creation. Samsung is not liable for errors or omissions. All brand,
product, service names and logos are trademarks and/or registered trademarks
of their respective owners and are hereby recognized and acknowledged.
Samsung Electronics Co., Ltd.
95, Samsung 2-ro
Giheung-gu
Yongin-si, Gyeonggi-do, 446-711
KOREA
www.samsungled.com
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