Product Family Data Sheet Rev. 1.4 2016.06.01 High Voltage LED Series Chip on Board LC016D High efficacy COB LED package well-suited for use in spotlight applications Features & Benefits • Chip on Board (COB) solution makes it easy to design in • Simple assembly reduces manufacturing cost • Low thermal resistance • InGaN/GaN MQW LED with long time reliability Applications • Spotlight / Downlight • LED Retrofit Bulbs • Outdoor Illumination 1# 2 Table of Contents 1. Characteristics ----------------------- 3 2. Product Code Information ----------------------- 5 3. Typical Characteristics Graphs ----------------------- 9 4. Outline Drawing & Dimension ----------------------- 12 5. Reliability Test Items & Conditions ----------------------- 13 6. Label Structure ----------------------- 14 7. Packing Structure ----------------------- 15 8. Precautions in Handling & Use ----------------------- 17 3 1. Characteristics a) Absolute Maximum Rating Item Symbol Rating Unit Condition Ambient / Operating Temperature Ta -40 ~ +105 ºC - Storage Temperature Tstg -40 ~ +120 ºC - LED Junction Temperature TJ 140 ºC - Case Temperature Tc Forward Current IF 810 mA - Power Dissipation PD 43.1 W - ESD (HBM) - ±2 kV - ESD (MM) - ±0.5 kV - b) Electro-optical Characteristics (IF = 450 mA, TJ = 85 ºC) Item Unit Rank Min. Typ. Max. Forward Voltage (VF) V YZ 31.8 34.6 37.5 5 80 - - Color Rendering Index (Ra) 7 90 Thermal Resistance (junction to chip point) ºC/W - 1.1 - Beam Angle º - 115 - Nominal Power W 16.9 Notes: 1) The COB is tested in pulsed condition at rated test current (10 ms pulse width) and rated temperature (TJ = TC = Ta = 85 °C) 2) Samsung maintains measurement tolerance of: forward voltage = ±5 %, CRI = ±1 3) Refer to the derating curve, ‘3. Typical Characteristics Graph’ designed within the range. 4 c) Luminous Flux Characteristics CRI (Ra) Min. (IF = 450 mA) Nominal CCT (K) Flux Rank Flux Bin H9 Flux @ TJ = 85 °C (lm) Min. Typ. Max. H9 1962 2065 - D1 D1 2065 2169 - J0 J0 2073 2182 - D1 D1 2182 2291 - J1 J1 2150 2263 - D1 D1 2263 2376 - J1 J1 2189 2304 - D1 D1 2304 2419 - J2 J2 2208 2324 - D1 D1 2324 2440 - J2 J2 2208 2324 - D1 D1 2324 2440 - J1 J1 2189 2304 - D1 D1 2304 2419 - Flux Rank Flux Bin H6 2700 3000 3500 80 4000 5000 5700 6500 CRI (Ra) Min. Nominal CCT (K) Flux @ TJ = 85 °C (lm) Min. Typ. Max. H6 1683 1771 - D1 D1 1771 1860 - H7 H7 1783 1877 - D1 D1 1877 1970 - H8 H8 1836 1932 - D1 D1 1932 2029 - H8 H8 1872 1971 - D1 D1 1971 2069 - 2700 90 3000 3500 4000 Notes: 1) The COB is tested in pulsed operating condition at rated test current (10 ms pulse width) and rated temperature (TJ = TC = 85 °C). 2) Samsung maintains measurement tolerance of: Luminous flux = ±7 %, CRI = ±1 5 2. Product Code Information 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S P H W H A H D N E 2 5 Y Z W 3 H 9 Digit PKG Information Code Samsung Package High Power SPH Color WH Product Version A Form Factor HD 9 Lens Type N No lens 10 Internal Code E LC016D 11 Chip Type 2 12 CRI & Sorting Temperature 1 2 3 4 5 6 7 8 13 14 15 CCT (K) 16 17 Forward Voltage (V) Specification Warm White COB 5 Min. 80 (85℃) 7 Min. 90 (85℃) YZ 31.8~37.5 W 2700K V 3000K U 3500K T 4000K R 5000K Q 5700K P 6500K 2 MacAdam 2-step 3 MacAdam 3-step MacAdam Step 18 Luminous Flux (Lm) H6 Min. 1600 H7 Min. 1700 H8 Min. 1800 H9 Min. 1900 J0 Min. 2000 J1 J2 D1 Min. 2100 Min. 2200 Add rank 6 a) Binning Structure CRI (Ra) Min. (IF = 450 mA, TJ = 85 ºC) Nominal CCT (K) Color Rank Chrom. Bin SPHWHAHDNE25YZW2H9 W2 W2 SPHWHAHDNE25YZW3H9 W3 W3 SPHWHAHDNE25YZW2D1 W2 W2 SPHWHAHDNE25YZW3D1 W3 W3 SPHWHAHDNE25YZV2J0 V2 V2 SPHWHAHDNE25YZV3J0 V3 V3 SPHWHAHDNE25YZV2D1 V2 V2 SPHWHAHDNE25YZV3D1 V3 V3 SPHWHAHDNE25YZU2J1 U2 U2 SPHWHAHDNE25YZU3J1 U3 U3 SPHWHAHDNE25YZU2D1 U2 U2 SPHWHAHDNE25YZU3D1 U3 U3 SPHWHAHDNE25YZT2J1 T2 T2 SPHWHAHDNE25YZT3J1 T3 T3 SPHWHAHDNE25YZT2D1 T2 T2 SPHWHAHDNE25YZT3D1 T3 T3 R3 R3 Product Code Flux Rank Flux Range (Φv, lm) H9 1962 ~ D1 2065 ~ J0 2073 ~ D1 2182 ~ J1 2150 ~ D1 2263 ~ J1 2189 ~ D1 2324 ~ J2 2208 ~ D1 2324 ~ J2 2208 ~ D1 2324 ~ J1 2189 ~ D1 2304 ~ YZ 2700 80 VF Rank 3000 YZ 3500 YZ 4000 YZ SPHWHAHDNE25YZR3J2 5000 YZ SPHWHAHDNE25YZR3D1 SPHWHAHDNE25YZQ3J2 5700 YZ Q3 Q3 SPHWHAHDNE25YZQ3D1 SPHWHAHDNE25YZP3J1 6500 YZ SPHWHAHDNE25YZP3DD1 P3 P3 7 CRI (Ra) Min. Nominal CCT (K) Color Rank Chrom. Bin SPHWHAHDNE27YZW2H6 W2 W2 SPHWHAHDNE27YZW3H6 W3 W3 SPHWHAHDNE27YZW2D1 W2 W2 SPHWHAHDNE27YZW3D1 W3 W3 SPHWHAHDNE27YZV2H7 V2 V2 SPHWHAHDNE27YZV3H7 V3 V3 SPHWHAHDNE27YZV2D1 V2 V2 SPHWHAHDNE27YZV3D1 V3 V3 SPHWHAHDNE27YZU2H8 U2 U2 SPHWHAHDNE27YZU3H8 U3 U3 SPHWHAHDNE27YZU2D1 U2 U2 SPHWHAHDNE27YZU3D1 U3 U3 SPHWHAHDNE27YZT2H8 T2 T2 SPHWHAHDNE27YZT3H8 T3 T3 SPHWHAHDNE27YZT2D1 T2 T2 SPHWHAHDNE27YZT3D1 T3 T3 Product Code 2700 VF Rank Flux Rank Flux Range (Φv, lm) H6 1683 ~ D1 1771 ~ H7 1783 ~ D1 1877 ~ H8 1836 ~ D1 1932 ~ H8 1872 ~ D1 1971 ~ YZ 90 3000 YZ 3500 YZ 4000 YZ 8 b) Chromaticity Region & Coordinates (IF = 450 mA, TJ = 85 ºC) θ CIE x,y MacAdam Ellipse (W2, W3) MacAdam Ellipse (V2, V3) Step CIE x CIE y θ a b Step CIE x CIE y θ a b 2-step 0.4578 0.4101 53.70 0.0054 0.0028 2-step 0.4338 0.403 53.22 0.0056 0.0027 3-step 0.4578 0.4101 53.70 0.0081 0.0042 3-step 0.4338 0.4030 53.22 0.0083 0.0041 Step CIE x CIE y θ a b Step CIE x CIE y θ a b 2-step 0.4073 0.3917 54.00 0.0062 0.0028 2-step 0.3818 0.3797 53.72 0.0063 0.0027 3-step 0.4073 0.3917 54.00 0.0093 0.0041 3-step 0.3818 0.3797 53.72 0.0094 0.0040 MacAdam Ellipse (U2, U3) MacAdam Ellipse (T2, T3) MacAdam Ellipse (R3) MacAdam Ellipse (Q3) Step CIE x CIE y θ a b Step CIE x CIE y θ a b 3-step 0.3447 0.3553 59.62 0.0082 0.0035 3-step 0.3287 0.3417 59.0950 0.0075 0.0032 MacAdam Ellipse (P3) Step CIE x CIE y θ a b 3-step 0.3123 0.3282 58.5700 0.0067 0.0029 Note: Samsung maintains measurement tolerance of: Cx, Cy = ±0.005 9 3. Typical Characteristics Graphs a) Spectrum Distribution (IF = 450 mA, TJ = 85 ºC) CCT: 2700 K (80 CRI) CCT: 3000 K (80 CRI) Relative Intensity vs. Wavelength 100 80 60 40 20 0 400 500 600 700 800 Relative Emission Intensity(%) Relative Emission Intensity(%) Relative Intensity vs. Wavelength 100 80 60 40 20 0 400 500 Wavelength CCT: 3500 K (80 CRI) 60 40 20 0 500 600 700 800 Relative Emission Intensity(%) Relative Emission Intensity(%) 80 100 80 60 40 20 0 400 500 Wavelength 600 700 800 Wavelength CCT: 5000 K (80 CRI) CCT: 5700 K (80 CRI) Relative Intensity vs. Wavelength 100 80 60 40 20 0 500 600 Wavelength 700 800 Relative Emission Intensity(%) Relative Intensity vs. Wavelength Relative Emission Intensity(%) 800 Relative Intensity vs. Wavelength 100 400 700 CCT: 4000 K (80 CRI) Relative Intensity vs. Wavelength 400 600 Wavelength(nm) 100 80 60 40 20 0 400 500 600 Wavelength 700 800 10 CCT: 6500 K (80 CRI) Relative Emission Intensity(%) Relative Intensity vs. Wavelength 100 80 60 40 20 0 400 500 600 700 800 Wavelength b) Forward Current Characteristics (TJ = 85 ºC) Forward Voltage vs. Forward Current 400 45 Forward Voltage(%) Relative Luminous Flux(%) Relative luminous Flux vs. Forward Current 300 200 100 0 40 35 30 0 0.5 1 0 0.5 Forward Current(A) 1 Forward Current(A) C) Temperature Characteristics (IF = 450mA) Forward Voltage vs. Temperature 105 36.5 Forward Voltage(V) Relative Luminous Flux(%) Relative Luminous Flux vs. Temperature 100 95 90 85 36.0 35.5 35.0 34.5 34.0 33.5 33.0 80 20 40 60 Tc(℃) 80 100 20 40 60 Tc(℃) 80 100 11 d) Color Shift Characteristics (TJ = 85 ºC, △CIE x,△CIE y IF = 450mA, CRI80+) vs. Forward Current △CIEx,△CIEy vs. Temperature 0 △CIE x,△ CIE y △CIE x,△ CIE y 0 -0.01 -0.02 -0.03 △CIE x -0.04 △ CIE y 0.30 0.60 0.90 1.20 -0.03 ΔCIE x -0.04 ΔCIE y e) Beam Angle Characteristics (IF = 450 mA, TJ = 85 ºC) 1.2 1 0.8 0.6 0.4 0.2 0 -100 -80 -60 -40 -20 0 20 40 60 80 100 Angle(°) f) Derating Characteristics Derating Curve 1000 800 600 400 200 0 0 20 40 60 Tc [ ℃ ] 80 20 40 60 Tc(℃) Forward Current(A) Relative Luminous Intensity -0.02 -0.05 -0.05 0.00 If [ mA ] -0.01 100 120 80 100 12 4. Outline Drawing & Dimension Tc 1. Unit: mm 2. Tolerance: ± 0.3 mm Note: Item Dimension Tolerance Unit Length 19.0 ±0.15 mm Width 19.0 ±0.15 mm Height 1.50 ±0.30 mm Light Emitting Surface (LES) Diameter 14.5 ±0.15 mm Denoted product information above is only an example ( LC016D, CRI80+, 3000K ) 13 5. Reliability Test Items & Conditions a) Test Items Test Item Test Condition Test Hour / Cycle High Temperature Humidity Life Test 60 ºC, 90 % RH,, DC Derating, IF 1000 h High Temperature Life Test 85 ºC, DC Derating, IF 1000 h Low Temperature Life Test -40 ºC, DC , IF = 810 mA 1000 h Pulsed Operating Life Test 55 ℃, Pulse width 100 ㎲, duty cycle 3 % 1000 h High Temperature Storage 120 ºC 1000 h Low Temperature Storage -40 ºC 1000 h Temperature Humidity Storage 60 ºC, 90% RH 1000h Temperature Cycle On/Off Test -40 ºC / 85 ºC each 20 min, 30 min transfer power on/off each 5 min, DC Derating, IF = max 100 cycles R1: 10 MΩ R2: 1.5 kΩ C: 100 pF V: ±2 kV ESD (HBM) 5 times R1: 10 MΩ R2: 0 kΩ C: 200 pF ESD (MM) 5 times V: ±0.2 kV Vibration Test 20 ~ 80 Hz (displacement: 0.06 inch, max. 20 g) 80 ~ 2 kHz (max. 20 g) min. frequency ↔ max. frequency 4 min transfer 4 times Mechanical Shock Test 1500 g, 0.5 ms each of the 6 surfaces (3 axis x 2 sides) 5 times Sulfur Resistance 25 °C, 75%, H2S 15 ppm 504h b) Criteria for Judging the Damage Item Symbol Test Condition (Tc = 25 ºC) Forward Voltage VF Luminous Flux Φv 6. Label Structure Limit Min. Max. IF = 450 mA L.S.L. * 0.9 U.S.L. * 1.1 IF = 450 mA L.S.L * 0.7 U.S.L * 1.3 14 a) Label Structure ⓐⓑⓒⓓⓔⓕ YZW3H9 Bin Code SPHWHAHDNE25YZW3H9 YZW3H9 01 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Product Code G4AZC4001 / 1001 / xxxx pcs IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Lot Number Note: Denoted bin code and product code above is only an example (see description on page 5) Bin Code: ⓐⓑ: Forward Voltage bin ⓒⓓ: Chromaticity bin ⓔⓕ: Luminous Flux bin (refer to page 11) (refer to page 9-10) (refer to page 6) b) Lot Number The lot number is composed of the following characters: YZW3H9 SPHWHAHDNE25YZW3H9 YZW3H9 01 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ①②③④⑤⑥⑦⑧⑨/1ⓐⓑⓒ/ xxxx pcs IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ① ③④⑤⑥⑦⑧⑨ / 1ⓐⓑⓒ / xxxx pcs ① ② ③ ④ ⑤ ⑥⑦⑧⑨ ⓐⓑⓒ : Production site (S: Giheung, Korea, : 4 : Product state : Year : Month : Day (1~9, A, B~V) : Product serial number (001 ~ 999) G: Tianjin, China) (LED) (A: Normal, B: Bulk, C: First Production, R: Reproduction, S: Sample) (Z: 2015, A: 2016, B: 2017…) (1~9, A, B, C) 15 6. Packing Structure Packing material Tray Aluminum Bag Inner Box Outer Box Max. quantity in pcs of COB 20 40(2 trays) 160 1600 Length 160 210 230 476 Dimension(mm) Width 180 241 84 445 a) Packing Structure Label Label Height 10 260 272 Tolerance 1.0 10 2 5 16 b) Tray ① Cover c) Aluminum Vinyl Packing Bag ② Body 17 8. Precautions in Handling & Use 1) This device should not be used in any type of fluid such as water, oil, organic solvent, etc. When cleaning is required, IPA is recommended as the cleaning agent. Some solvent-based cleaning agent may damage the silicone resins used in the device. 2) LEDs must be stored in a clean environment. If the LEDs are to be stored for three months or more after being shipped from Samsung, they should be packed with a nitrogen-filled container (shelf life of sealed bags is 12 months at temperature 0~40 ºC, 0~90 % RH). 3) After storage bag is opened, device subjected to soldering, solder reflow, or other high temperature processes must be: a. Mounted within 672 hours (28 days) at an assembly line with a condition of no more than 30 ºC / 60 % RH, or b. Stored at <10 % RH 4) Repack unused products with anti-moisture packing, fold to close any opening and then store in a dry place. 5) Devices require baking before mounting, if humidity card reading is >60 % at 23 ± 5 ºC. 6) Devices must be baked for 1 hour at 60 ± 5 ºC, if baking is required. 7) The LEDs are sensitive to the static electricity and surge current. It is recommended to use a wrist band or antielectrostatic glove when handling the LEDs. If voltage exceeding the absolute maximum rating is applied to LEDs, it may cause damage or even destruction to LED devices. Damaged LEDs may show some unusual characteristics such as increase in leakage current, lowered turn-on voltage, or abnormal lighting of LEDs at low current. 8) VOCs (Volatile Organic Compounds) can be generated from adhesives, flux, hardener or organic additives used in luminaires (fixtures). Transparent LED silicone encapsulant is permeable to those chemicals and they may lead to a discoloration of encapsulant when they exposed to heat or light. This phenomenon can cause a significant loss of light emitted (output) from the luminaires. In order to prevent these problems, we recommend users to know the physical properties of materials used in luminaires and they must be carefully selected. 9) The resin area is very sensitive, please do not handle, press, touch, rub, clean, or pick by with tweezers on it. Instead, please pick at the handling area as indicated below. Legal and additional information. About Samsung Electronics Co., Ltd. Samsung Electronics Co., Ltd. inspires the world and shapes the future with transformative ideas and technologies, redefining the worlds of TVs, smartphones, wearable devices, tablets, cameras, digital appliances, printers, medical equipment, network systems and semiconductors. We are also leading in the Internet of Things space through, among others, our Digital Health and Smart Home initiatives. We employ 307,000 people across 84 countries. To discover more, please visit our official website at www.samsung.com and our official blog at global.samsungtomorrow.com. Copyright © 2015 Samsung Electronics Co., Ltd. All rights reserved. Samsung is a registered trademark of Samsung Electronics Co., Ltd. Specifications and designs are subject to change without notice. Non-metric weights and measurements are approximate. All data were deemed correct at time of creation. Samsung is not liable for errors or omissions. All brand, product, service names and logos are trademarks and/or registered trademarks of their respective owners and are hereby recognized and acknowledged. Samsung Electronics Co., Ltd. 95, Samsung 2-ro Giheung-gu Yongin-si, Gyeonggi-do, 446-711 KOREA www.samsungled.com