Data Sheet LC040D Rev.1.4

Product Family Data Sheet
Rev. 1.4 2016.06.01
High Voltage LED Series
Chip on Board
LC040D
High efficacy COB LED package
well-suited for use in spotlight applications
Features & Benefits
• Chip on Board (COB) solution makes it easy to design in
• Simple assembly reduces manufacturing cost
• Low thermal resistance
• InGaN/GaN MQW LED with long time reliability
Applications
• Spotlight / Downlight
• LED Retrofit Bulbs
• Outdoor Illumination
1#
2
Table of Contents
1.
Characteristics
-----------------------
3
2.
Product Code Information
-----------------------
5
3.
Typical Characteristics Graphs
-----------------------
9
4.
Outline Drawing & Dimension
-----------------------
12
5.
Reliability Test Items & Conditions
-----------------------
13
6.
Label Structure
-----------------------
14
7.
Packing Structure
-----------------------
15
8.
Precautions in Handling & Use
-----------------------
17
3
1. Characteristics
a) Absolute Maximum Rating
Item
Symbol
Rating
Unit
Condition
Ambient / Operating Temperature
Ta
-40 ~ +105
ºC
-
Storage Temperature
Tstg
-40 ~ +120
ºC
-
LED Junction Temperature
TJ
140
ºC
-
Case Temperature
Tc
105
ºC
Forward Current
IF
1900
mA
-
Power Dissipation
PD
103.5
W
-
ESD (HBM)
-
±2
kV
-
ESD (MM)
-
±0.5
kV
-
b) Electro-optical Characteristics
(IF = 1080 mA, TJ = 85 ºC)
Item
Unit
Rank
Min.
Typ.
Max.
Forward Voltage (VF)
V
YZ
31.8
34.6
37.5
5
80
-
-
Color Rendering Index (Ra)
7
90
Thermal Resistance (junction to chip point)
ºC/W
-
0.8
-
Beam Angle
º
-
115
-
Nominal Power
W
40.5
Notes:
1) The COB is tested in pulsed condition at rated test current (10 ms pulse width) and rated temperature (TJ = TC = Ta = 85 °C)
2) Samsung maintains measurement tolerance of:
forward voltage = ±5 %, CRI = ±1
3) Refer to the derating curve, ‘3. Typical Characteristics Graph’ designed within the range.
4
c) Luminous Flux Characteristics
CRI (Ra)
Min.
(IF = 1080 mA)
Nominal
CCT (K)
Flux
Rank
Flux
Bin
K0
Flux @ TJ = 85 °C (lm)
Min.
Typ.
Max.
M7
4746
4996
-
D1
D1
4996
5246
-
K2
M9
4994
5257
-
D1
D1
5257
5520
-
K3
N1
5147
5418
-
D1
D1
5418
5689
-
K3
N2
5258
5535
-
D1
D1
5535
5812
-
K4
N2
5283
5561
-
D1
D1
5561
5839
-
K4
N3
5309
5588
-
D1
D1
5588
5868
-
K3
N2
5251
5528
-
D1
D1
5528
5804
-
Flux
Rank
Flux
Bin
J6
2700
3000
3500
80
4000
5000
5700
6500
CRI (Ra)
Min.
Nominal
CCT (K)
Flux @ TJ = 85 °C (lm)
Min.
Typ.
Max.
M0
4068
4283
-
D1
D1
4283
4497
-
J7
M2
4298
4525
-
D1
D1
4525
4751
-
J8
M4
4408
4640
-
D1
D1
4640
4872
-
J8
M5
4505
4742
-
D1
D1
4742
4979
-
2700
3000
90
3500
4000
Notes:
1)
The COB is tested in pulsed operating condition at rated test current (10 ms pulse width) and rated temperature
(TJ = TC = 85 °C).
2) Samsung maintains measurement tolerance of: Luminous flux = ±7 %, CRI = ±1
5
2. Product Code Information
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
S
P
H
W
H
A
H
D
N
K
2
5
Y
Z
W
3
M
7
Digit
PKG Information
Code
Samsung Package High Power
SPH
Color
WH
Product Version
A
Form Factor
HD
9
Lens Type
N
No lens
10
Internal Code
K
LC040D
11
Chip Type
2
12
CRI & Sorting Temperature
1 2
3
4 5
6
7 8
13
14
15
CCT (K)
16
17
Forward Voltage (V)
Specification
Warm White
COB
5
Min. 80
(85℃)
7
Min. 90
(85℃)
YZ
31.8~37.5
W
2700K
V
3000K
U
3500K
T
4000K
R
5000K
Q
5700K
P
6500K
2
MacAdam 2-step
3
MacAdam 3-step
MacAdam Step
18
Luminous Flux
M0
Min. 4000
M2
Min. 4200
M4
Min. 4400
M5
Min. 4500
M7
Min. 4700
M9
Min. 4900
N1
Min. 5100
N2
N3
D1
Min. 5200
Min. 5300
Add rank
6
a) Binning Structure
CRI (Ra)
Min.
(IF = 1080 mA, TJ = 85 ºC)
Nominal
CCT (K)
Color
Rank
Chrom.
Bin
SPHWHAHDNK25YZW2M7
W2
W2
SPHWHAHDNK25YZW3M7
W3
W3
SPHWHAHDNK25YZW2D1
W2
W2
SPHWHAHDNK25YZW3D1
W3
W3
SPHWHAHDNK25YZV2M9
V2
V2
SPHWHAHDNK25YZV3M9
V3
V3
SPHWHAHDNK25YZV2D1
V2
V2
SPHWHAHDNK25YZV3D1
V3
V3
SPHWHAHDNK25YZU2N1
U2
U2
SPHWHAHDNK25YZU3N1
U3
U3
SPHWHAHDNK25YZU2D1
U2
U2
SPHWHAHDNK25YZU3D1
U3
U3
SPHWHAHDNK25YZT2N2
T2
T2
SPHWHAHDNK25YZT3N2
T3
T3
SPHWHAHDNK25YZT2D1
T2
T2
SPHWHAHDNK25YZT3D1
T3
T3
R3
R3
Product Code
Flux
Rank
Flux Range
(Φv, lm)
M7
4746 ~
D1
4996 ~
M9
4994 ~
D1
5257 ~
N1
5147 ~
D1
5418 ~
N2
5258 ~
D1
5535 ~
N2
5283 ~
D1
5561 ~
N3
5309 ~
D1
5588 ~
N2
5251 ~
D1
5528 ~
YZ
2700
80
VF
Rank
3000
YZ
3500
YZ
4000
YZ
SPHWHAHDNK25YZR3N2
5000
YZ
SPHWHAHDNK25YZR3D1
SPHWHAHDNK25YZQ3N3
5700
YZ
Q3
Q3
SPHWHAHDNK25YZQ3D1
SPHWHAHDNK25YZP3N2
6500
YZ
SPHWHAHDNK25YZP3D1
P3
P3
7
CRI (Ra)
Min.
Nominal
CCT (K)
Color
Rank
Chrom.
Bin
SPHWHAHDNK27YZW2M0
W2
W2
SPHWHAHDNK27YZW3M0
W3
W3
SPHWHAHDNK27YZW2D1
W2
W2
SPHWHAHDNK27YZW3D1
W3
W3
SPHWHAHDNK27YZV2M2
V2
V2
SPHWHAHDNK27YZV3M2
V3
V3
SPHWHAHDNK27YZV2D1
V2
V2
SPHWHAHDNK27YZV3D1
V3
V3
SPHWHAHDNK27YZU2M4
U2
U2
SPHWHAHDNK27YZU3M4
U3
U3
SPHWHAHDNK27YZU2D1
U2
U2
SPHWHAHDNK27YZU3D1
U3
U3
SPHWHAHDNK27YZT2M5
T2
T2
SPHWHAHDNK27YZT3M5
T3
T3
SPHWHAHDNK27YZT2D1
T2
T2
SPHWHAHDNK27YZT3D1
T3
T3
Product Code
2700
VF
Rank
Flux
Rank
Flux Range
(Φv, lm)
M0
4068 ~
D1
4283 ~
M2
4298 ~
D1
4525 ~
M4
4408 ~
D1
4640 ~
M5
4505 ~
D1
4742 ~
YZ
3000
YZ
90
3500
YZ
4000
YZ
8
b) Chromaticity Region & Coordinates
(IF = 1080 mA, TJ = 85 ºC)
θ
CIE x,y
MacAdam Ellipse (W2, W3)
MacAdam Ellipse (V2, V3)
Step
CIE x
CIE y
θ
a
b
Step
CIE x
CIE y
θ
a
b
2-step
0.4578
0.4101
53.70
0.0054
0.0028
2-step
0.4338
0.403
53.22
0.0056
0.0027
3-step
0.4578
0.4101
53.70
0.0081
0.0042
3-step
0.4338
0.4030
53.22
0.0083
0.0041
Step
CIE x
CIE y
θ
a
b
Step
CIE x
CIE y
θ
a
b
2-step
0.4073
0.3917
54.00
0.0062
0.0028
2-step
0.3818
0.3797
53.72
0.0063
0.0027
3-step
0.4073
0.3917
54.00
0.0093
0.0041
3-step
0.3818
0.3797
53.72
0.0094
0.0040
MacAdam Ellipse (U2, U3)
MacAdam Ellipse (T2, T3)
MacAdam Ellipse (R3)
MacAdam Ellipse (Q3)
Step
CIE x
CIE y
θ
a
b
Step
CIE x
CIE y
θ
a
b
3-step
0.3447
0.3553
59.62
0.0082
0.0035
3-step
0.3287
0.3417
59.0950
0.0075
0.0032
MacAdam Ellipse (P3)
Step
CIE x
CIE y
θ
a
b
3-step
0.3123
0.3282
58.5700
0.0067
0.0029
Note:
Samsung maintains measurement tolerance of:
Cx, Cy = ±0.005
9
3. Typical Characteristics Graphs
a) Spectrum Distribution
(IF = 1080 mA, TJ = 85 ºC)
CCT: 2700 K (80 CRI)
CCT: 3000 K (80 CRI)
Relative Intensity vs. Wavelength
100
80
60
40
20
0
400
500
600
700
800
Relative Emission Intensity(%)
Relative Emission Intensity(%)
Relative Intensity vs. Wavelength
100
80
60
40
20
0
400
500
Wavelength
CCT: 3500 K (80 CRI)
60
40
20
0
500
600
700
800
Relative Emission Intensity(%)
Relative Emission Intensity(%)
80
100
80
60
40
20
0
400
500
Wavelength
600
700
800
Wavelength
CCT: 5000 K (80 CRI)
CCT: 5700 K (80 CRI)
Relative Intensity vs. Wavelength
100
80
60
40
20
0
500
600
Wavelength
700
800
Relative Emission Intensity(%)
Relative Intensity vs. Wavelength
Relative Emission Intensity(%)
800
Relative Intensity vs. Wavelength
100
400
700
CCT: 4000 K (80 CRI)
Relative Intensity vs. Wavelength
400
600
Wavelength(nm)
100
80
60
40
20
0
400
500
600
Wavelength
700
800
10
CCT: 6500 K (80 CRI)
Relative Emission Intensity(%)
Relative Intensity vs. Wavelength
100
80
60
40
20
0
400
500
600
700
800
Wavelength
b) Forward Current Characteristics
(TJ = 85 ºC)
Forward Voltage vs. Forward Current
40
300
Forward Voltage(%)
Relative Luminous Flux(%)
Relative luminous Flux vs. Forward Current
250
200
150
100
50
38
36
34
32
30
0
0
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Forward Current(A)
Forward Current(A)
C) Temperature Characteristics (IF = 1080mA)
Forward Voltage vs. Temperature
105
36.5
100
Forward Voltage(V)
Relative Luminous Flux(%)
Relative Luminous Flux vs. Temperature
95
90
85
80
36.0
35.5
35.0
34.5
34.0
33.5
33.0
20
40
60
Tc(℃)
80
100
20
40
60
Tc(℃)
80
100
11
d) Color Shift Characteristics
△CIE x,△CIE y
(TJ = 25 ºC,
IF = 1080mA,
CRI80+)
vs. Forward Current
△CIEx,△CIEy vs. Temperature
0
△CIE x,△ CIE y
△CIE x,△ CIE y
0
-0.01
-0.02
-0.03
△CIE x
-0.04
△ CIE y
-0.05
0.00 0.35 0.70 1.05 1.40 1.75 2.10 2.45 2.80
Relative Luminous Intensity
(IF = 1080 mA, TJ = 85 ºC)
1.2
1
0.8
0.6
0.4
0.2
0
-100 -80 -60 -40 -20 0
20 40 60 80 100
Angle(°)
f) Derating Characteristics
Derating Curve
2500
If [ mA ]
2000
1500
1000
500
0
0
20
40
60
Tc [ ℃ ]
80
-0.02
-0.03
ΔCIE x
-0.04
ΔCIE y
-0.05
20
40
60
Tc(℃)
Forward Current(A)
e) Beam Angle Characteristics
-0.01
100
120
80
100
12
4. Outline Drawing & Dimension
Tc
1. Unit:
mm
2. Tolerance: ± 0.3 mm
Note:
Item
Dimension
Tolerance
Unit
Length
28.0
±0.15
mm
Width
28.0
±0.15
mm
Height
1.50
±0.20
mm
Light Emitting Surface (LES) Diameter
22.0
±0.15
mm
Denoted product information above is only an example
( LC040D, CRI80+, 3000K )
13
5. Reliability Test Items & Conditions
a) Test Items
Test Item
Test Condition
Test Hour / Cycle
High Temperature
Humidity Life Test
60 ºC, 90 % RH,, DC Derating, IF
1000 h
High Temperature
Life Test
85 ºC, DC Derating, IF
1000 h
Low Temperature
Life Test
-40 ºC, DC , IF = 1900 mA
1000 h
Pulsed Operating Life Test
55 ℃, Pulse width 100 ㎲, duty cycle 3 %
1000 h
High Temperature
Storage
120 ºC
1000 h
Low Temperature
Storage
-40 ºC
1000 h
Temperature Humidity
Storage
60 ºC, 90% RH
1000h
Thermal Cycle
-45 ºC / 15 min ↔ 125 ºC / 15 min
temperature change in 5 min
500 cycles
Temperature Cycle
On/Off Test
-40 ºC / 85 ºC each 20 min, 30 min transfer
power on/off each 5 min, DC Derating, IF = max
100 cycles
R1: 10 MΩ
R2: 1.5 kΩ
C: 100 pF
ESD (HBM)
V:
5 times
±2 kV
R1: 10 MΩ
R2: 0 kΩ
ESD (MM)
5 times
C: 200 pF
V: ±0.2 kV
Vibration Test
20 ~ 80 Hz (displacement: 0.06 inch, max. 20 g)
80 ~ 2 kHz (max. 20 g)
min. frequency ↔ max. frequency 4 min transfer
4 times
Mechanical Shock Test
1500 g, 0.5 ms
each of the 6 surfaces (3 axis x 2 sides)
5 times
Sulfur Resistance
25 °C,
75%, H2S 15 ppm
504h
b) Criteria for Judging the Damage
Item
Symbol
Test Condition
(Tc = 25 ºC)
Forward Voltage
VF
Luminous Flux
Φv
Limit
Min.
Max.
IF = 1080 mA
L.S.L. * 0.9
U.S.L. * 1.1
IF = 1080 mA
L.S.L * 0.7
U.S.L * 1.3
14
6. Label Structure
a) Label Structure
ⓐⓑⓒⓓⓔⓕ
YZW3M7
Bin Code
SPHWHAHDNK25YZW3M7 YZW3M7 01
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
Product Code
G4AZC4001 / 1001 / xxxx pcs
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
Lot Number
Note:
Denoted bin code and product code above is only an example (see description on page 5)
Bin Code:
ⓐⓑ:
Forward Voltage bin
ⓒⓓ:
Chromaticity bin
ⓔⓕ:
Luminous Flux bin
(refer to page 11)
(refer to page 9-10)
(refer to page 6)
b) Lot Number
The lot number is composed of the following characters:
YZW3M7
SPHWHAHDNK25YZW3M7 YZW3M7 01
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
①②③④⑤⑥⑦⑧⑨/1ⓐⓑⓒ/ xxxx pcs
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
①
③④⑤⑥⑦⑧⑨ / 1ⓐⓑⓒ / xxxx pcs
①
②
③
④
⑤
⑥⑦⑧⑨
ⓐⓑⓒ
:
Production site
(S: Giheung, Korea,
:
4
:
Product state
:
Year
:
Month
:
Day (1~9, A, B~V)
:
Product serial number (001 ~ 999)
G: Tianjin, China)
(LED)
(A: Normal, B: Bulk, C: First Production, R: Reproduction, S: Sample)
(Z: 2015, A: 2016, B: 2017…)
(1~9, A, B, C)
15
6.
Packing Structure
Packing material
Tray
Aluminum Bag
Inner Box
Outer Box
a) Packing Structure
Max. quantity
in pcs of COB
16
32(2 trays)
128
1280
Length
160
210
230
476
Dimension(mm)
Width
180
241
84
445
Height
10
260
272
Tolerance
1.0
10
2
5
16
Label
Label
b) Tray
① Cover
② Body
17
c) Aluminum Vinyl Packing Bag
8.
Precautions in Handling & Use
18
1)
This device should not be used in any type of fluid such as water, oil, organic solvent, etc. When cleaning is required, IPA
is recommended as the cleaning agent. Some solvent-based cleaning agent may damage the silicone resins used in the
device.
2)
LEDs must be stored in a clean environment. If the LEDs are to be stored for three months or more after being shipped
from Samsung, they should be packed with a nitrogen-filled container (shelf life of sealed bags is 12 months at
temperature 0~40 ºC, 0~90 % RH).
3)
After storage bag is opened, device subjected to soldering, solder reflow, or other high temperature processes must be:
a. Mounted within 672 hours (28 days) at an assembly line with a condition of no more than 30 ºC / 60 % RH, or
b. Stored at <10 % RH
4)
Repack unused products with anti-moisture packing, fold to close any opening and then store in a dry place.
5)
Devices require baking before mounting, if humidity card reading is >60 % at 23 ± 5 ºC.
6)
Devices must be baked for 1 hour at 60 ± 5 ºC, if baking is required.
7)
The LEDs are sensitive to the static electricity and surge current. It is recommended to use a wrist band or antielectrostatic glove when handling the LEDs. If voltage exceeding the absolute maximum rating is applied to LEDs, it may
cause damage or even destruction to LED devices. Damaged LEDs may show some unusual characteristics such as
increase in leakage current, lowered turn-on voltage, or abnormal lighting of LEDs at low current.
8)
VOCs (Volatile Organic Compounds) can be generated from adhesives, flux, hardener or organic additives used in
luminaires (fixtures). Transparent LED silicone encapsulant is permeable to those chemicals and they may lead to a
discoloration of encapsulant when they exposed to heat or light. This phenomenon can cause a significant loss of light
emitted (output) from the luminaires. In order to prevent these problems, we recommend users to know the physical
properties of materials used in luminaires and they must be carefully selected.
9)
The resin area is very sensitive, please do not handle, press, touch, rub, clean, or pick by with tweezers on it. Instead,
please pick at the handling area as indicated below.
Legal and additional information.
About Samsung Electronics Co., Ltd.
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www.samsung.com and our official blog at global.samsungtomorrow.com.
Copyright © 2015 Samsung Electronics Co., Ltd. All rights reserved.
Samsung is a registered trademark of Samsung Electronics Co., Ltd.
Specifications and designs are subject to change without notice. Non-metric
weights and measurements are approximate. All data were deemed correct
at time of creation. Samsung is not liable for errors or omissions. All brand,
product, service names and logos are trademarks and/or registered trademarks
of their respective owners and are hereby recognized and acknowledged.
Samsung Electronics Co., Ltd.
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Giheung-gu
Yongin-si, Gyeonggi-do, 446-711
KOREA
www.samsungled.com
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