Product Family Data Sheet Rev. 1.4 2016.06.01 High Voltage LED Series Chip on Board LC040D High efficacy COB LED package well-suited for use in spotlight applications Features & Benefits • Chip on Board (COB) solution makes it easy to design in • Simple assembly reduces manufacturing cost • Low thermal resistance • InGaN/GaN MQW LED with long time reliability Applications • Spotlight / Downlight • LED Retrofit Bulbs • Outdoor Illumination 1# 2 Table of Contents 1. Characteristics ----------------------- 3 2. Product Code Information ----------------------- 5 3. Typical Characteristics Graphs ----------------------- 9 4. Outline Drawing & Dimension ----------------------- 12 5. Reliability Test Items & Conditions ----------------------- 13 6. Label Structure ----------------------- 14 7. Packing Structure ----------------------- 15 8. Precautions in Handling & Use ----------------------- 17 3 1. Characteristics a) Absolute Maximum Rating Item Symbol Rating Unit Condition Ambient / Operating Temperature Ta -40 ~ +105 ºC - Storage Temperature Tstg -40 ~ +120 ºC - LED Junction Temperature TJ 140 ºC - Case Temperature Tc 105 ºC Forward Current IF 1900 mA - Power Dissipation PD 103.5 W - ESD (HBM) - ±2 kV - ESD (MM) - ±0.5 kV - b) Electro-optical Characteristics (IF = 1080 mA, TJ = 85 ºC) Item Unit Rank Min. Typ. Max. Forward Voltage (VF) V YZ 31.8 34.6 37.5 5 80 - - Color Rendering Index (Ra) 7 90 Thermal Resistance (junction to chip point) ºC/W - 0.8 - Beam Angle º - 115 - Nominal Power W 40.5 Notes: 1) The COB is tested in pulsed condition at rated test current (10 ms pulse width) and rated temperature (TJ = TC = Ta = 85 °C) 2) Samsung maintains measurement tolerance of: forward voltage = ±5 %, CRI = ±1 3) Refer to the derating curve, ‘3. Typical Characteristics Graph’ designed within the range. 4 c) Luminous Flux Characteristics CRI (Ra) Min. (IF = 1080 mA) Nominal CCT (K) Flux Rank Flux Bin K0 Flux @ TJ = 85 °C (lm) Min. Typ. Max. M7 4746 4996 - D1 D1 4996 5246 - K2 M9 4994 5257 - D1 D1 5257 5520 - K3 N1 5147 5418 - D1 D1 5418 5689 - K3 N2 5258 5535 - D1 D1 5535 5812 - K4 N2 5283 5561 - D1 D1 5561 5839 - K4 N3 5309 5588 - D1 D1 5588 5868 - K3 N2 5251 5528 - D1 D1 5528 5804 - Flux Rank Flux Bin J6 2700 3000 3500 80 4000 5000 5700 6500 CRI (Ra) Min. Nominal CCT (K) Flux @ TJ = 85 °C (lm) Min. Typ. Max. M0 4068 4283 - D1 D1 4283 4497 - J7 M2 4298 4525 - D1 D1 4525 4751 - J8 M4 4408 4640 - D1 D1 4640 4872 - J8 M5 4505 4742 - D1 D1 4742 4979 - 2700 3000 90 3500 4000 Notes: 1) The COB is tested in pulsed operating condition at rated test current (10 ms pulse width) and rated temperature (TJ = TC = 85 °C). 2) Samsung maintains measurement tolerance of: Luminous flux = ±7 %, CRI = ±1 5 2. Product Code Information 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S P H W H A H D N K 2 5 Y Z W 3 M 7 Digit PKG Information Code Samsung Package High Power SPH Color WH Product Version A Form Factor HD 9 Lens Type N No lens 10 Internal Code K LC040D 11 Chip Type 2 12 CRI & Sorting Temperature 1 2 3 4 5 6 7 8 13 14 15 CCT (K) 16 17 Forward Voltage (V) Specification Warm White COB 5 Min. 80 (85℃) 7 Min. 90 (85℃) YZ 31.8~37.5 W 2700K V 3000K U 3500K T 4000K R 5000K Q 5700K P 6500K 2 MacAdam 2-step 3 MacAdam 3-step MacAdam Step 18 Luminous Flux M0 Min. 4000 M2 Min. 4200 M4 Min. 4400 M5 Min. 4500 M7 Min. 4700 M9 Min. 4900 N1 Min. 5100 N2 N3 D1 Min. 5200 Min. 5300 Add rank 6 a) Binning Structure CRI (Ra) Min. (IF = 1080 mA, TJ = 85 ºC) Nominal CCT (K) Color Rank Chrom. Bin SPHWHAHDNK25YZW2M7 W2 W2 SPHWHAHDNK25YZW3M7 W3 W3 SPHWHAHDNK25YZW2D1 W2 W2 SPHWHAHDNK25YZW3D1 W3 W3 SPHWHAHDNK25YZV2M9 V2 V2 SPHWHAHDNK25YZV3M9 V3 V3 SPHWHAHDNK25YZV2D1 V2 V2 SPHWHAHDNK25YZV3D1 V3 V3 SPHWHAHDNK25YZU2N1 U2 U2 SPHWHAHDNK25YZU3N1 U3 U3 SPHWHAHDNK25YZU2D1 U2 U2 SPHWHAHDNK25YZU3D1 U3 U3 SPHWHAHDNK25YZT2N2 T2 T2 SPHWHAHDNK25YZT3N2 T3 T3 SPHWHAHDNK25YZT2D1 T2 T2 SPHWHAHDNK25YZT3D1 T3 T3 R3 R3 Product Code Flux Rank Flux Range (Φv, lm) M7 4746 ~ D1 4996 ~ M9 4994 ~ D1 5257 ~ N1 5147 ~ D1 5418 ~ N2 5258 ~ D1 5535 ~ N2 5283 ~ D1 5561 ~ N3 5309 ~ D1 5588 ~ N2 5251 ~ D1 5528 ~ YZ 2700 80 VF Rank 3000 YZ 3500 YZ 4000 YZ SPHWHAHDNK25YZR3N2 5000 YZ SPHWHAHDNK25YZR3D1 SPHWHAHDNK25YZQ3N3 5700 YZ Q3 Q3 SPHWHAHDNK25YZQ3D1 SPHWHAHDNK25YZP3N2 6500 YZ SPHWHAHDNK25YZP3D1 P3 P3 7 CRI (Ra) Min. Nominal CCT (K) Color Rank Chrom. Bin SPHWHAHDNK27YZW2M0 W2 W2 SPHWHAHDNK27YZW3M0 W3 W3 SPHWHAHDNK27YZW2D1 W2 W2 SPHWHAHDNK27YZW3D1 W3 W3 SPHWHAHDNK27YZV2M2 V2 V2 SPHWHAHDNK27YZV3M2 V3 V3 SPHWHAHDNK27YZV2D1 V2 V2 SPHWHAHDNK27YZV3D1 V3 V3 SPHWHAHDNK27YZU2M4 U2 U2 SPHWHAHDNK27YZU3M4 U3 U3 SPHWHAHDNK27YZU2D1 U2 U2 SPHWHAHDNK27YZU3D1 U3 U3 SPHWHAHDNK27YZT2M5 T2 T2 SPHWHAHDNK27YZT3M5 T3 T3 SPHWHAHDNK27YZT2D1 T2 T2 SPHWHAHDNK27YZT3D1 T3 T3 Product Code 2700 VF Rank Flux Rank Flux Range (Φv, lm) M0 4068 ~ D1 4283 ~ M2 4298 ~ D1 4525 ~ M4 4408 ~ D1 4640 ~ M5 4505 ~ D1 4742 ~ YZ 3000 YZ 90 3500 YZ 4000 YZ 8 b) Chromaticity Region & Coordinates (IF = 1080 mA, TJ = 85 ºC) θ CIE x,y MacAdam Ellipse (W2, W3) MacAdam Ellipse (V2, V3) Step CIE x CIE y θ a b Step CIE x CIE y θ a b 2-step 0.4578 0.4101 53.70 0.0054 0.0028 2-step 0.4338 0.403 53.22 0.0056 0.0027 3-step 0.4578 0.4101 53.70 0.0081 0.0042 3-step 0.4338 0.4030 53.22 0.0083 0.0041 Step CIE x CIE y θ a b Step CIE x CIE y θ a b 2-step 0.4073 0.3917 54.00 0.0062 0.0028 2-step 0.3818 0.3797 53.72 0.0063 0.0027 3-step 0.4073 0.3917 54.00 0.0093 0.0041 3-step 0.3818 0.3797 53.72 0.0094 0.0040 MacAdam Ellipse (U2, U3) MacAdam Ellipse (T2, T3) MacAdam Ellipse (R3) MacAdam Ellipse (Q3) Step CIE x CIE y θ a b Step CIE x CIE y θ a b 3-step 0.3447 0.3553 59.62 0.0082 0.0035 3-step 0.3287 0.3417 59.0950 0.0075 0.0032 MacAdam Ellipse (P3) Step CIE x CIE y θ a b 3-step 0.3123 0.3282 58.5700 0.0067 0.0029 Note: Samsung maintains measurement tolerance of: Cx, Cy = ±0.005 9 3. Typical Characteristics Graphs a) Spectrum Distribution (IF = 1080 mA, TJ = 85 ºC) CCT: 2700 K (80 CRI) CCT: 3000 K (80 CRI) Relative Intensity vs. Wavelength 100 80 60 40 20 0 400 500 600 700 800 Relative Emission Intensity(%) Relative Emission Intensity(%) Relative Intensity vs. Wavelength 100 80 60 40 20 0 400 500 Wavelength CCT: 3500 K (80 CRI) 60 40 20 0 500 600 700 800 Relative Emission Intensity(%) Relative Emission Intensity(%) 80 100 80 60 40 20 0 400 500 Wavelength 600 700 800 Wavelength CCT: 5000 K (80 CRI) CCT: 5700 K (80 CRI) Relative Intensity vs. Wavelength 100 80 60 40 20 0 500 600 Wavelength 700 800 Relative Emission Intensity(%) Relative Intensity vs. Wavelength Relative Emission Intensity(%) 800 Relative Intensity vs. Wavelength 100 400 700 CCT: 4000 K (80 CRI) Relative Intensity vs. Wavelength 400 600 Wavelength(nm) 100 80 60 40 20 0 400 500 600 Wavelength 700 800 10 CCT: 6500 K (80 CRI) Relative Emission Intensity(%) Relative Intensity vs. Wavelength 100 80 60 40 20 0 400 500 600 700 800 Wavelength b) Forward Current Characteristics (TJ = 85 ºC) Forward Voltage vs. Forward Current 40 300 Forward Voltage(%) Relative Luminous Flux(%) Relative luminous Flux vs. Forward Current 250 200 150 100 50 38 36 34 32 30 0 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 Forward Current(A) Forward Current(A) C) Temperature Characteristics (IF = 1080mA) Forward Voltage vs. Temperature 105 36.5 100 Forward Voltage(V) Relative Luminous Flux(%) Relative Luminous Flux vs. Temperature 95 90 85 80 36.0 35.5 35.0 34.5 34.0 33.5 33.0 20 40 60 Tc(℃) 80 100 20 40 60 Tc(℃) 80 100 11 d) Color Shift Characteristics △CIE x,△CIE y (TJ = 25 ºC, IF = 1080mA, CRI80+) vs. Forward Current △CIEx,△CIEy vs. Temperature 0 △CIE x,△ CIE y △CIE x,△ CIE y 0 -0.01 -0.02 -0.03 △CIE x -0.04 △ CIE y -0.05 0.00 0.35 0.70 1.05 1.40 1.75 2.10 2.45 2.80 Relative Luminous Intensity (IF = 1080 mA, TJ = 85 ºC) 1.2 1 0.8 0.6 0.4 0.2 0 -100 -80 -60 -40 -20 0 20 40 60 80 100 Angle(°) f) Derating Characteristics Derating Curve 2500 If [ mA ] 2000 1500 1000 500 0 0 20 40 60 Tc [ ℃ ] 80 -0.02 -0.03 ΔCIE x -0.04 ΔCIE y -0.05 20 40 60 Tc(℃) Forward Current(A) e) Beam Angle Characteristics -0.01 100 120 80 100 12 4. Outline Drawing & Dimension Tc 1. Unit: mm 2. Tolerance: ± 0.3 mm Note: Item Dimension Tolerance Unit Length 28.0 ±0.15 mm Width 28.0 ±0.15 mm Height 1.50 ±0.20 mm Light Emitting Surface (LES) Diameter 22.0 ±0.15 mm Denoted product information above is only an example ( LC040D, CRI80+, 3000K ) 13 5. Reliability Test Items & Conditions a) Test Items Test Item Test Condition Test Hour / Cycle High Temperature Humidity Life Test 60 ºC, 90 % RH,, DC Derating, IF 1000 h High Temperature Life Test 85 ºC, DC Derating, IF 1000 h Low Temperature Life Test -40 ºC, DC , IF = 1900 mA 1000 h Pulsed Operating Life Test 55 ℃, Pulse width 100 ㎲, duty cycle 3 % 1000 h High Temperature Storage 120 ºC 1000 h Low Temperature Storage -40 ºC 1000 h Temperature Humidity Storage 60 ºC, 90% RH 1000h Thermal Cycle -45 ºC / 15 min ↔ 125 ºC / 15 min temperature change in 5 min 500 cycles Temperature Cycle On/Off Test -40 ºC / 85 ºC each 20 min, 30 min transfer power on/off each 5 min, DC Derating, IF = max 100 cycles R1: 10 MΩ R2: 1.5 kΩ C: 100 pF ESD (HBM) V: 5 times ±2 kV R1: 10 MΩ R2: 0 kΩ ESD (MM) 5 times C: 200 pF V: ±0.2 kV Vibration Test 20 ~ 80 Hz (displacement: 0.06 inch, max. 20 g) 80 ~ 2 kHz (max. 20 g) min. frequency ↔ max. frequency 4 min transfer 4 times Mechanical Shock Test 1500 g, 0.5 ms each of the 6 surfaces (3 axis x 2 sides) 5 times Sulfur Resistance 25 °C, 75%, H2S 15 ppm 504h b) Criteria for Judging the Damage Item Symbol Test Condition (Tc = 25 ºC) Forward Voltage VF Luminous Flux Φv Limit Min. Max. IF = 1080 mA L.S.L. * 0.9 U.S.L. * 1.1 IF = 1080 mA L.S.L * 0.7 U.S.L * 1.3 14 6. Label Structure a) Label Structure ⓐⓑⓒⓓⓔⓕ YZW3M7 Bin Code SPHWHAHDNK25YZW3M7 YZW3M7 01 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Product Code G4AZC4001 / 1001 / xxxx pcs IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Lot Number Note: Denoted bin code and product code above is only an example (see description on page 5) Bin Code: ⓐⓑ: Forward Voltage bin ⓒⓓ: Chromaticity bin ⓔⓕ: Luminous Flux bin (refer to page 11) (refer to page 9-10) (refer to page 6) b) Lot Number The lot number is composed of the following characters: YZW3M7 SPHWHAHDNK25YZW3M7 YZW3M7 01 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ①②③④⑤⑥⑦⑧⑨/1ⓐⓑⓒ/ xxxx pcs IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ① ③④⑤⑥⑦⑧⑨ / 1ⓐⓑⓒ / xxxx pcs ① ② ③ ④ ⑤ ⑥⑦⑧⑨ ⓐⓑⓒ : Production site (S: Giheung, Korea, : 4 : Product state : Year : Month : Day (1~9, A, B~V) : Product serial number (001 ~ 999) G: Tianjin, China) (LED) (A: Normal, B: Bulk, C: First Production, R: Reproduction, S: Sample) (Z: 2015, A: 2016, B: 2017…) (1~9, A, B, C) 15 6. Packing Structure Packing material Tray Aluminum Bag Inner Box Outer Box a) Packing Structure Max. quantity in pcs of COB 16 32(2 trays) 128 1280 Length 160 210 230 476 Dimension(mm) Width 180 241 84 445 Height 10 260 272 Tolerance 1.0 10 2 5 16 Label Label b) Tray ① Cover ② Body 17 c) Aluminum Vinyl Packing Bag 8. Precautions in Handling & Use 18 1) This device should not be used in any type of fluid such as water, oil, organic solvent, etc. When cleaning is required, IPA is recommended as the cleaning agent. Some solvent-based cleaning agent may damage the silicone resins used in the device. 2) LEDs must be stored in a clean environment. If the LEDs are to be stored for three months or more after being shipped from Samsung, they should be packed with a nitrogen-filled container (shelf life of sealed bags is 12 months at temperature 0~40 ºC, 0~90 % RH). 3) After storage bag is opened, device subjected to soldering, solder reflow, or other high temperature processes must be: a. Mounted within 672 hours (28 days) at an assembly line with a condition of no more than 30 ºC / 60 % RH, or b. Stored at <10 % RH 4) Repack unused products with anti-moisture packing, fold to close any opening and then store in a dry place. 5) Devices require baking before mounting, if humidity card reading is >60 % at 23 ± 5 ºC. 6) Devices must be baked for 1 hour at 60 ± 5 ºC, if baking is required. 7) The LEDs are sensitive to the static electricity and surge current. It is recommended to use a wrist band or antielectrostatic glove when handling the LEDs. If voltage exceeding the absolute maximum rating is applied to LEDs, it may cause damage or even destruction to LED devices. Damaged LEDs may show some unusual characteristics such as increase in leakage current, lowered turn-on voltage, or abnormal lighting of LEDs at low current. 8) VOCs (Volatile Organic Compounds) can be generated from adhesives, flux, hardener or organic additives used in luminaires (fixtures). Transparent LED silicone encapsulant is permeable to those chemicals and they may lead to a discoloration of encapsulant when they exposed to heat or light. This phenomenon can cause a significant loss of light emitted (output) from the luminaires. In order to prevent these problems, we recommend users to know the physical properties of materials used in luminaires and they must be carefully selected. 9) The resin area is very sensitive, please do not handle, press, touch, rub, clean, or pick by with tweezers on it. Instead, please pick at the handling area as indicated below. Legal and additional information. About Samsung Electronics Co., Ltd. Samsung Electronics Co., Ltd. inspires the world and shapes the future with transformative ideas and technologies, redefining the worlds of TVs, smartphones, wearable devices, tablets, cameras, digital appliances, printers, medical equipment, network systems and semiconductors. We are also leading in the Internet of Things space through, among others, our Digital Health and Smart Home initiatives. We employ 307,000 people across 84 countries. To discover more, please visit our official website at www.samsung.com and our official blog at global.samsungtomorrow.com. Copyright © 2015 Samsung Electronics Co., Ltd. All rights reserved. Samsung is a registered trademark of Samsung Electronics Co., Ltd. Specifications and designs are subject to change without notice. Non-metric weights and measurements are approximate. All data were deemed correct at time of creation. Samsung is not liable for errors or omissions. All brand, product, service names and logos are trademarks and/or registered trademarks of their respective owners and are hereby recognized and acknowledged. Samsung Electronics Co., Ltd. 95, Samsung 2-ro Giheung-gu Yongin-si, Gyeonggi-do, 446-711 KOREA www.samsungled.com