Data Sheet LC080D Rev.0.9

Product Family Data Sheet
Rev. 0.9 2016.06.01
High Voltage LED Series
Chip on Board
LC080D
High efficacy COB LED package
well-suited for use in spotlight applications
Features & Benefits
• Chip on Board (COB) solution makes it easy to design in
• Simple assembly reduces manufacturing cost
• Low thermal resistance
• InGaN/GaN MQW LED with long time reliability
Applications
• Spotlight / Downlight
• LED Retrofit Bulbs
• Outdoor Illumination
1#
Table of Contents
1.
Characteristics
-----------------------
3
2.
Product Code Information
-----------------------
5
3.
Typical Characteristics Graphs
-----------------------
9
4.
Outline Drawing & Dimension
-----------------------
12
5.
Reliability Test Items & Conditions
-----------------------
13
6.
Label Structure
-----------------------
14
7.
Packing Structure
-----------------------
15
8.
Precautions in Handling & Use
-----------------------
17
1. Characteristics
a) Absolute Maximum Rating
Item
Symbol
Rating
Unit
Condition
Ambient / Operating Temperature
Ta
-40 ~ +105
ºC
-
Storage Temperature
Tstg
-40 ~ +120
ºC
-
LED Junction Temperature
TJ
140
ºC
-
Case Temperature
Tc
105
ºC
Forward Current
IF
2960
mA
-
Power Dissipation
PD
232.6
W
-
ESD (HBM)
-
±2
kV
-
ESD (MM)
-
±0.5
kV
-
b) Electro-optical Characteristics
(IF = 1620 mA, Ta = 85 ºC)
Item
Unit
Rank
Min.
Typ.
Max.
Forward Voltage (VF)
V
1Z
47.8
50.3
56.2
Color Rendering Index (Ra)
-
5
80
-
-
Thermal Resistance (junction to chip point)
ºC/W
-
0.5
-
Beam Angle
º
-
115
-
Nominal Power
W
84.2
Notes:
1) The COB is tested in pulsed condition at rated test current (10 ms pulse width) and rated temperature (TJ = TC = Ta = 85 °C)
2) Samsung maintains measurement tolerance of:
forward voltage = ±5 %, CRI = ±1
3) Refer to the derating curve, ‘3. Typical Characteristics Graph’ designed within the range.
c) Luminous Flux Characteristics
CRI (Ra)
Min.
80
(IF = 1620 mA)
Nominal
CCT (K)
Flux
Rank
2700
Flux @ Tc = 85 °C (lm)
Min.
Typ.
Max.
T1
10109
10642
11174
3000
T6
10669
11230
11792
3500
T9
10997
11576
12155
4000
U2
11229
11820
12411
5000
U2
11292
11886
12480
5700
V0
12011
12643
13275
6500
V5
12580
13242
13904
Notes:
1)
The COB is tested in pulsed operating condition at rated test current (10 ms pulse width) and rated temperature
(TJ = TC = 85 °C).
2) Samsung maintains measurement tolerance of: Luminous flux = ±7 %, CRI = ±1
2. Product Code Information
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
S
P
H
W
H
A
H
D
N
M
2
5
1
Z
W
3
R
7
Digit
PKG Information
Code
Samsung Package High Power
SPH
Color
WH
Product Version
A
Form Factor
HD
9
Lens Type
N
No lens
10
Internal Code
M
LC080D
11
Chip Type
2
12
CRI & Sorting Temperature
5
Forward Voltage (V)
1Z
47.8~56.2
W
2700K
V
3000K
U
3500K
T
4000K
1 2
3
4 5
6
7 8
13
14
15
CCT (K)
16
17
Specification
White
COB
Min. 80
(85℃)
R
5000K
Q
5700K
P
6500K
2
MacAdam 2-step
3
MacAdam 3-step
MacAdam Step
18
Luminous Flux
R7
Min. 8700
S1
Min. 9100
S4
Min. 9400
S6
Min. 9600
T1
Min. 10100
T6
Min. 10600
T9
Min. 10900
U2
Min. 11200
V0
Min. 12200
V5
Min. 12500
a) Binning Structure
CRI (Ra)
Min.
(IF = 1620 mA, TC = 85 ºC)
Nominal
CCT (K)
Product Code
VF
Rank
SPHWHAHDNM251ZW2T1
2700
SPHWHAHDNM251ZV3T6
10109 ~ 11174
T6
10669 ~ 11792
T9
10997 ~ 12155
U2
11229 ~ 12411
V3
SPHWHAHDNM251ZU2T9
U2
1Z
SPHWHAHDNM251ZU3T9
U3
SPHWHAHDNM251ZT2U2
4000
T1
V2
1Z
3500
Flux Range
(Φv, lm)
W3
SPHWHAHDNM251ZV2T6
3000
Flux
Rank
W2
1Z
SPHWHAHDNM251ZW3T1
80
Chrom.
Bin
T2
1Z
SPHWHAHDNM251ZT3U2
T3
5000
SPHWHAHDNM251ZR3U2
1Z
R3
U2
11292 ~ 12480
5700
SPHWHAHDNM251ZQ3V0
1Z
Q3
V0
12011 ~ 13275
6500
SPHWHAHDNM251ZP3V5
1Z
P3
V5
12580 ~ 13904
b) Chromaticity Region & Coordinates
(IF = 1620 mA, TJ = 85 ºC)
θ
CIE x,y
MacAdam Ellipse (W2, W3)
MacAdam Ellipse (V2, V3)
Step
CIE x
CIE y
θ
a
b
Step
CIE x
CIE y
θ
a
b
2-step
0.4578
0.4101
53.70
0.0054
0.0028
2-step
0.4338
0.403
53.22
0.0056
0.0027
3-step
0.4578
0.4101
53.70
0.0081
0.0042
3-step
0.4338
0.4030
53.22
0.0083
0.0041
Step
CIE x
CIE y
θ
a
b
Step
CIE x
CIE y
θ
a
b
2-step
0.4073
0.3917
54.00
0.0062
0.0028
2-step
0.3818
0.3797
53.72
0.0063
0.0027
3-step
0.4073
0.3917
54.00
0.0093
0.0041
3-step
0.3818
0.3797
53.72
0.0094
0.0040
MacAdam Ellipse (U2, U3)
MacAdam Ellipse (T2, T3)
MacAdam Ellipse (R3)
MacAdam Ellipse (Q3)
Step
CIE x
CIE y
θ
a
b
Step
CIE x
CIE y
θ
a
b
3-step
0.3447
0.3553
59.62
0.0082
0.0035
3-step
0.3287
0.3417
59.0950
0.0075
0.0032
MacAdam Ellipse (P3)
Step
CIE x
CIE y
θ
a
b
3-step
0.3123
0.3282
58.5700
0.0067
0.0029
Note:
Samsung maintains measurement tolerance of:
Cx, Cy = ±0.005
3. Typical Characteristics Graphs
a) Spectrum Distribution
(IF = 1620 mA, TJ = 85 ºC)
CCT: 2700 K (80 CRI)
CCT: 3000 K (80 CRI)
Relative Intensity vs. Wavelength
100
80
60
40
20
0
400
500
600
700
800
Relative Emission Intensity(%)
Relative Emission Intensity(%)
Relative Intensity vs. Wavelength
100
80
60
40
20
0
400
500
Wavelength
CCT: 3500 K (80 CRI)
60
40
20
0
500
600
700
800
Relative Emission Intensity(%)
Relative Emission Intensity(%)
80
100
80
60
40
20
0
400
500
Wavelength
600
700
800
Wavelength
CCT: 5000 K (80 CRI)
CCT: 5700 K (80 CRI)
Relative Intensity vs. Wavelength
100
80
60
40
20
0
500
600
Wavelength
700
800
Relative Emission Intensity(%)
Relative Intensity vs. Wavelength
Relative Emission Intensity(%)
800
Relative Intensity vs. Wavelength
100
400
700
CCT: 4000 K (80 CRI)
Relative Intensity vs. Wavelength
400
600
Wavelength(nm)
100
80
60
40
20
0
400
500
600
Wavelength
700
800
CCT: 6500 K (80 CRI)
Relative Emission Intensity(%)
Relative Intensity vs. Wavelength
100
80
60
40
20
0
400
500
600
700
800
Wavelength
(TJ = 25 ºC)
b) Forward Current Characteristics
Forward Voltage vs. Forward Current
200
55
Forward Voltage
Relative Luminous Flux(%)
Relative luminous Flux vs. Forward Current
150
100
50
0
50
45
40
0
1
2
3
4
0
1
Forward Current(A)
2
3
4
Forward Current(A)
C) Temperature Characteristics (IF = 1620mA)
Forward Voltage vs. Temperature
52.0
100
Forward Voltage(V)
Relative Luminous Flux(%)
Relative Luminous Flux vs. Temperature
105
95
90
85
80
51.5
51.0
50.5
50.0
49.5
20
40
60
Tc(℃)
80
100
20
40
60
Tc(℃)
80
100
d) Color Shift Characteristics
(TJ = 25 ºC,
IF = 1620mA,
CRI80+)
△CIEx,△CIEy vs. Temperature
△CIEx,△CIEy vs. Forward Current
△CIE x,△ CIE y
△CIE x,△ CIE y
0
-0.01
-0.03
△CIE x
△ CIE y
-0.03
△CIE x
-0.04
-0.05
0
1
2
3
4
e) Beam Angle Characteristics
(IF = 1620 mA, TJ = 85 ºC)
1.2
1
0.8
0.6
0.4
0.2
0
-100 -80 -60 -40 -20 0
20 40 60 80 100
Angle(°)
f) Derating Characteristics
Derating Curve
4000
3000
2000
1000
0
0
20
40
60
Tc [ ℃ ]
80
20
40
60
Tc(℃)
Forward Current(A)
Relative Luminous Intensity
-0.02
△ CIE y
-0.05
If [ mA ]
-0.01
100
120
80
100
4. Outline Drawing & Dimension
Tc
1. Unit:
mm
2. Tolerance: ± 0.3 mm
Note:
Item
Dimension
Tolerance
Unit
Length
28.0
±0.15
mm
Width
28.0
±0.15
mm
Height
1.50
±0.20
mm
Light Emitting Surface (LES) Diameter
22.0
±0.15
mm
Denoted product information above is only an example
( LC080D, CRI80+, 3000K )
5. Reliability Test Items & Conditions
a) Test Items
Test Item
Test Condition
Test Hour / Cycle
High Temperature
Humidity Life Test
60 ºC, 90 % RH,, DC Derating, IF
1000 h
High Temperature
Life Test
85 ºC, DC Derating, IF
1000 h
Low Temperature
Life Test
-40 ºC, DC , IF = 1944 mA
1000 h
Pulsed Operating Life Test
55 ℃, Pulse width 100 ㎲, duty cycle 3 %
1000 h
High Temperature
Storage
120 ºC
1000 h
Low Temperature
Storage
-40 ºC
1000 h
Temperature Humidity
Storage
60 ºC, 90% RH
1000h
Thermal Cycle
-45 ºC / 15 min ↔ 125 ºC / 15 min
temperature change in 5 min
500 cycles
Temperature Cycle
On/Off Test
-40 ºC / 85 ºC each 20 min, 30 min transfer
power on/off each 5 min, DC Derating, IF = max
100 cycles
R1: 10 MΩ
R2: 1.5 kΩ
C: 100 pF
V: ±2 kV
ESD (HBM)
5 times
R1: 10 MΩ
R2: 0 kΩ
C: 200 pF
ESD (MM)
5 times
V: ±0.2 kV
Vibration Test
20 ~ 80 Hz (displacement: 0.06 inch, max. 20 g)
80 ~ 2 kHz (max. 20 g)
min. frequency ↔ max. frequency 4 min transfer
4 times
Mechanical Shock Test
1500 g, 0.5 ms
each of the 6 surfaces (3 axis x 2 sides)
5 times
Sulfur Resistance
25 °C,
75%, H2S 15 ppm
504h
b) Criteria for Judging the Damage
Item
Symbol
Test Condition
(Tc = 25 ºC)
Forward Voltage
VF
Luminous Flux
Φv
Limit
Min.
Max.
IF = 1620 mA
L.S.L. * 0.9
U.S.L. * 1.1
IF = 1620 mA
L.S.L * 0.7
U.S.L * 1.3
6. Label Structure
a) Label Structure
ⓐⓑⓒⓓⓔⓕ
1ZW3T1
SPHWHAHDNM251ZW3T1 1ZW3T1
Bin Code
01
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
Product Code
G4AZC4001 / 1001 / xxxx pcs
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
Lot Number
Note:
Denoted bin code and product code above is only an example (see description on page 5)
Bin Code:
ⓐⓑ:
Forward Voltage bin
ⓒⓓ:
Chromaticity bin
ⓔⓕ:
Luminous Flux bin
(refer to page 11)
(refer to page 9-10)
(refer to page 6)
b) Lot Number
The lot number is composed of the following characters:
1ZW3T1
SPHWHAHDNM251ZW3T1 1ZW3T1
01
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
①②③④⑤⑥⑦⑧⑨/1ⓐⓑⓒ/ xxxx pcs
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
①
③④⑤⑥⑦⑧⑨ / 1ⓐⓑⓒ / xxxx pcs
①
②
③
④
⑤
⑥⑦⑧⑨
ⓐⓑⓒ
:
Production site
(S: Giheung, Korea,
:
4
:
Product state
:
Year
:
Month
:
Day (1~9, A, B~V)
:
Product serial number (001 ~ 999)
G: Tianjin, China)
(LED)
(A: Normal, B: Bulk, C: First Production, R: Reproduction, S: Sample)
(Z: 2015, A: 2016, B: 2017…)
(1~9, A, B, C)
6.
Packing Structure
Packing material
Tray
Aluminum Bag
Inner Box
Outer Box
Max. quantity
in pcs of COB
16
32(2 trays)
128
1280
Length
160
210
230
476
Dimension(mm)
Width
180
241
84
445
a) Packing Structure
Label
Label
Height
10
260
272
Tolerance
1.0
10
2
5
b) Tray
① Cover
c) Aluminum Vinyl Packing Bag
② Body
8.
Precautions in Handling & Use
1)
This device should not be used in any type of fluid such as water, oil, organic solvent, etc. When cleaning is required, IPA is
recommended as the cleaning agent. Some solvent-based cleaning agent may damage the silicone resins used in the
device.
2)
LEDs must be stored in a clean environment. If the LEDs are to be stored for three months or more after being shipped
from Samsung, they should be packed with a nitrogen-filled container (shelf life of sealed bags is 12 months at temperature
0~40 ºC, 0~90 % RH).
3)
After storage bag is opened, device subjected to soldering, solder reflow, or other high temperature processes must be:
a. Mounted within 672 hours (28 days) at an assembly line with a condition of no more than 30 ºC / 60 % RH, or
b. Stored at <10 % RH
4)
Repack unused products with anti-moisture packing, fold to close any opening and then store in a dry place.
5)
Devices require baking before mounting, if humidity card reading is >60 % at 23 ± 5 ºC.
6)
Devices must be baked for 1 hour at 60 ± 5 ºC, if baking is required.
7)
The LEDs are sensitive to the static electricity and surge current. It is recommended to use a wrist band or anti-electrostatic
glove when handling the LEDs. If voltage exceeding the absolute maximum rating is applied to LEDs, it may cause damage
or even destruction to LED devices. Damaged LEDs may show some unusual characteristics such as increase in leakage
current, lowered turn-on voltage, or abnormal lighting of LEDs at low current.
8)
VOCs (Volatile Organic Compounds) can be generated from adhesives, flux, hardener or organic additives used in
luminaires (fixtures). Transparent LED silicone encapsulant is permeable to those chemicals and they may lead to a
discoloration of encapsulant when they exposed to heat or light. This phenomenon can cause a significant loss of light
emitted (output) from the luminaires. In order to prevent these problems, we recommend users to know the physical
properties of materials used in luminaires and they must be carefully selected.
9)
The resin area is very sensitive, please do not handle, press, touch, rub, clean, or pick by with tweezers on it. Instead,
please pick at the handling area as indicated below.
Legal and additional information.
About Samsung Electronics Co., Ltd.
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www.samsung.com and our official blog at global.samsungtomorrow.com.
Copyright © 2015 Samsung Electronics Co., Ltd. All rights reserved.
Samsung is a registered trademark of Samsung Electronics Co., Ltd.
Specifications and designs are subject to change without notice. Non-metric
weights and measurements are approximate. All data were deemed correct
at time of creation. Samsung is not liable for errors or omissions. All brand,
product, service names and logos are trademarks and/or registered trademarks
of their respective owners and are hereby recognized and acknowledged.
Samsung Electronics Co., Ltd.
95, Samsung 2-ro
Giheung-gu
Yongin-si, Gyeonggi-do, 446-711
KOREA
www.samsungled.com
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