Brochure - LH351B for Industrial Light

Rev.1.0 Sep.2015
Legal and additional information.
About Samsung Electronics Co., Ltd.
Samsung Electronics Co., Ltd. inspires the world and shapes the future
LH351B for
Industrial
Light
with transformative ideas and technologies, redefining the worlds of TVs,
smartphones, wearable devices, tablets, cameras, digital appliances,
printers, medical equipment, network systems and semiconductors.
We are also leading in the Internet of Things space through, among others,
our Digital Health and Smart Home initiatives. We employ 307,000 people
across 83 countries. To discover more, please visit our official website at
www.samsung.com and our official blog at global.samsungtomorrow.com.
Copyright © 2015 Samsung Electronics Co., Ltd. All rights reserved.
Samsung is a registered trademark of Samsung Electronics Co., Ltd.
Specifications and designs are subject to change without notice. Non-metric
weights and measurements are approximate. All data were deemed correct
at time of creation. Samsung is not liable for errors or omissions. All brand,
product, service names and logos are trademarks and/or registered trademarks
of their respective owners and are hereby recognized and acknowledged.
Samsung Electronics Co., Ltd.
95, Samsung 2-ro
Giheung-gu
Yongin-si, Gyeonggi-do, 446-711
KOREA
www.samsungled.com
High performance
and energy-efficient
industrial light solution LH351B
Specification
CRI
Min.
• High efficacy industrial light solution
Luminous Flux (lm)
CCT (K)
(Delivering set efficacy over 100 lm/W @700 mA)
• Flip chip with phosphor film
90
• Max current: 1.5 A (Tj = 150℃)
• LM80 Certified @ 1 A, 105℃ (Ts) (L70>60,000 @1 A, 85℃)
Top Class Performance
3000
80
[ Luminous Flux vs Forward Current ]
3500
350mA
700mA
1000mA
1500mA
4000
Lumen gap
lm
LH351B
∆%
165
lm
∆%
297
lm
∆%
395
lm
∆%
5000
538
Competitor A
146
11.7
274
7.9
374
5.2
521
3.2
Competitor B
155
6.1
276
7.2
364
7.7
479
11.0
75
Competitor C
148
10.3
263
11.6
344
13.0
456
Lumen gap
560
600
Wave Length-A
Wave Length-B
400
Wave Length-C
200
580
470
460
700
490
Wave Length-A
Wave Length-B
Wave Length-C
480
470
460
0
200
400
Competitor A
600
800
1000
1200
1400
350mA
lm
∆%
550
553
700mA
lm
∆%
991
-0.6
986
1000mA
1500mA
1600
1800
lm
lm
∆%
120.0
150.0
SPHWH2L3D30ED4U0J3
130.0
160.0
SPHWH2L3D30ED4U0K3
120.0
150.0
SPHWH2L3D30ED4T0J3
130.0
160.0
SPHWH2L3D30ED4T0K3
130.0
160.0
1316
140.0
170.0
SPHWH2L3D30DD4QTM3
120.0
150.0
SPHWH2L3D30CD4V0J3
130.0
160.0
SPHWH2L3D30CD4V0K3
130.0
160.0
SPHWH2L3D30CD4T0K3
140.0
170.0
SPHWH2L3D30CD4T0M3
150.0
180.0
SPHWH2L3D30CD4T0N3
130.0
160.0
SPHWH2L3D30CD4RTK3
140.0
170.0
SPHWH2L3D30CD4RTM3
150.0
180.0
SPHWH2L3D30CD4RTN3
130.0
160.0
SPHWH2L3D30CD4QTK3
140.0
170.0
SPHWH2L3D30CD4QTM3
0.5
1301
150.0
180.0
SPHWH2L3D30CD4QTN3
130.0
160.0
SPHWH2L3D30CD4PTK3
140.0
170.0
SPHWH2L3D30CD4PTM3
150.0
180.0
SPHWH2L3D30CD4PTN3
5700
1795
1.1
1711
4.7
Competitor B
384
30.3
721
27.3
984
25.2
1372
23.6
Competitor C
423
23.1
751
24.2
982
25.4
1304
27.4
Competitor D
353
35.9
663
33.2
909
30.9
1282
28.6
2000 [lm]
6500
SPHWH2L3D30ED4RTM3
Dimensions (unit : mm)
3.50 ±0.13
3.35
Samsung provides enhanced
5700K
5700K certification accreditations support program to customers launching new products.
TUV SUD
3.50 ±0.13
3.35
CCIC
Ø3.
3.35
3.50 ±0.13
3.35
22
The program offers testing and certification services to manufacturers who require third-party validation of quality, safety, and energy efficiency
at a 20-50 percent improvement in costs and total testing time.
KTL
SPHWH2L3D30ED4RTK3
350
5700
∆%
5000K
5000K
Certifiacation
Support Program
Intertek
SPHWH2L3D30ED4V0K3
SPHWH2L3D30DD4RTM3
5000
70
620
Chip
480
0
Phosphor
Mixing Ratio-A
LH351B
Mixing Ratio-B
Mixing Ratio-C
600
700
160.0
Cathode Mark
R1
.45
1.93
3.50 ±0.13
3.35 0.431
0.20
22
Ø3.
R1
.45
1.93
0.431
0.20
22
Ø3.
R1
.45
1.93
0.431
3.30
0.20
(+)
3.30
3.30
(+)
(+)
(-)
R0.20
R0.20
R0.20
Silicone lens
Silicone
lens
Silicone lens
Ceramic
substrate
Ceramic pad
substrate
Ceramic substrate
Cathode Mark Cathode Mark
Thermal
(-)
Thermal pad
0.50
540
620
490
SPHWH2L3D30ED4V0J3
130.0
1.30
520
600
800
150.0
170.0
4000
3.50 ±0.13
Chip
SPHWH2L3D30ED4V0H3
120.0
170.0
15.3
2000 [mA]
580
1000
140.0
(-)
0.50
1200
SPHWH2L3D30ED4W0J3
110.0
0.50
1400
150.0
1.30
1600
LH351B
Competitior A
540
Phosphor
Competitior
B
Single Mixing Ratio
560
Competitior
C
Competitior D
SPHWH2L3D30ED4W0H3
120.0
0.50
520
SPHWH2L3D30ED4W0G3
140.0
0.50
1800
130.0
110.0
140.0
[ Lumens per $]
[lm/$]
2000
100.0
0.50
1800
SPHWH2L3D30GD4U0H3
1.30
1600
SPHWH2L3D30GD4U0G3
140
0.50
1400
130
110
0.50
1200
100
0.50
1000
SPHWH2L3D30GD4V0G3
140.0
0
800
130
5000
3000
100
600
SPHWH2L3D30GD4V0F3
100
0.50
200
400
SPHWH2L3D30GD4W0G3
120
0.50
300
200
130
90
0.50
400
0
100
3.35
500
SPHWH2L3D30GD4W0F3
3.50 ±0.13
LH351B
Competitior A
Competitior B
Competitior C
600
120
3500
2700
[lm]
700
90
3000
3.5 × 3.5 mm
Part Number
Max.
2700
• Excellent efficacy: 165 lm/W @350 mA, 85℃, 4000 K
IF (mA)
Min.
Thermal pad
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