Down

Y6N02
WF
WFY
20V N−Channel MOSFET
Features
■ 6A, 20V, RDS(on)(Max 40mΩ)@VGS=4.5V
■ 1.8 V Rated for Low Voltage Gate Drive
■ SOT-23 Surface Mount for Small Footprint
■ Single Pulse Avalanche Energy Rated
■ RoHS compliant
al De
scription
Gener
Genera
Des
D
This MOSFET is produced using Winsemi’s advanced MOS
technology. This latest technology has been especially designed
to minimize on-state resistance, have a high rugged avalanche
characteristics. This devices is specially well suited for Load
switching and PA switching.
S
G
T-23
SO
SOT
s(Tc=25℃ unless otherwise noted)
Absolute Maximum Rating
Ratings
Symbol
Value
Units
VDSS
Drain Source Voltage
Parameter
20
V
ID
Continuous Drain Current
6
A
IDM
Drain Current Pulsed
20
A
PD
Total Power Dissipation(Note 1)
0.3
W
VGS
Gate to Source Voltage
±12
V
TJ, Tstg
Junction and Storage Temperature
-55~150
℃
TL
Maximum lead Temperature for soldering purposes
260
℃
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are
individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.
cterist
Thermal Chara
Charac
teristiics
Symbol
RQJA
RQJA
RQJA
Parameter
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 2)
Value
Min
Typ
Max
-
-
170
110
300
Units
℃/W
℃/W
℃/W
Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Mounted on a ceramic board (1000mm2×0.8mm) 1units)
Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.
Rev. A Mar.2010-H04F
[email protected] Microelectronics Co., Ltd., All right reserved.
P12-3
Y6N02
WF
WFY
cterist
Electrical Chara
Charac
teristiics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current(Note 4)
IGSS
VGS = ±10 V, VDS = 0 V
-
-
±100
nA
Drain cut−off current(Note 4)
IDSS
VDS = 16 V, VGS = 0 V
-
-
-1
μA
V(BR)DSS
ID = 250 μA, VGS = 0 V
20
-
-
V
VGS(th)
VDS = VDS ID =-250 μA
0.5
-
1.0
V
-
32
40
VGS = 2.5 V, ID = 2.0 A
40
55
VGS = 1.8 V, ID = 1.0 A
65
110
Drain−source breakdown voltage
Gate threshold voltage
VGS = 4.5 V, ID = 3A
Drain−source ON resistance
RDS(ON)
Forward Transconductance
gfs
VDS = 5.0 V, ID = 2.8 A
-
6.5
-
Input capacitance
Ciss
VDS =10 V,
-
430
-
Reverse transfer capacitance
Crss
VGS = 0 V,
-
90
-
Coss
f = 1 MHz
-
110
-
Turn-on Delay time
td(on)
VGS =4.5 V,
-
5
10
Turn−on Rise time
tr
VDS =10V,
-
15
28
Turn-off Delay time
td(off)
ID =
-
26
48
RG = 6 Ω, RL=10 Ω
-
15
28
Qg
VGS =4.5V,
-
6
8
Gate−source charge
Qgs
VDS =10V,
-
0.7
-
Gate−drain (“miller”) Charge
Qgd
ID = 6 A
-
3
-
Output capacitance
mΩ
S
pF
Switching
time
ns
1.0 A,
(Note 5)
Turn−off Fall time
Total gate charge
tf
nC
e−Drain Ratings and Characteristics (Ta = 25°C)
Sourc
Source
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
6
A
Pulse drain reverse current
IDRP
-
-
-
20
A
Forward voltage (diode)
VDSF
-
0.7
1.3
V
IDR = 1A, VGS = 0 V
Note 4: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%.
Note 5: Switching characteristics are independent of operating junction temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/6
Steady, keep you advance
Y6N02
WF
WFY
FFiigg.. 11 OOnn--SSttaattee CChhaarraacctteerriissttiiccss
FFiigg..33 OOnn−−RReessiissttaannccee vvss.. DDrraaiinn CCuurrrreenntt
FFiigg..22 TTrraannssffeerr CCuurrrreenntt CChhaarraacctteerriissttiiccss
FFiigg..44 DDiiooddee FFoorrwwaarrdd VVoollttaaggee vvss.. CCuurrrreenntt
-
FFiigg..55 OOnn--RReessiissttaannccee VVaarriiaattiioonn vvss JJuunnccttiioonn
TTeemmppeerraattuurree
FFiigg..66 GGaattee CChhaarrggee CChhaarraacctteerriissttiiccss
3/6
Steady, keep you advance
Y6N02
WF
WFY
FFiigg..99 SSiinnggllee PPuullssee PPoowweerr
4/6
Steady, keep you advance
Y6N02
WF
WFY
sistive Switching Test & Wavefor
ms
Re
Res
aveform
5/6
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Y6N02
WF
WFY
T-2
3 Pac
kage Dimension
SO
SOT
-23
Pack
DIM
A
A1
B
C
D
E
F
G
H
I
J
MILL
MILLIIMTERS
MIN
INCHES
MAX
MIN
0.95
1.90
2.60
1.40
2.80
1.00
0.00
0.35
0.10
0.30
50o
MAX
0.037
0.074
3.00
1.70
3.10
1.30
0.10
0.50
0.20
0.60
10o
0.102
0.055
0.110
0.039
0.000
0.014
0.004
0.012
50o
0.118
0.067
0.122
0.051
0.004
0.020
0.008
0.024
10o
6/6
Steady, keep you advance
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