Datasheet

AOD476
N-Channel Enhancement Mode Field Effect Transistor
1.4
General Description
Features
The AOD476 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
VDS (V) = 20V
ID = 25A (VGS = 10V)
RDS(ON) <21 mΩ (VGS = 10V)
RDS(ON) <28 mΩ (VGS = 4.5V)
RDS(ON) <79 mΩ (VGS = 2.5V)
193
100% UIS Tested!
18
100% Rg Tested!
-RoHS Compliant
-Halogen Free*
TO-252
D-PAK
Top View
D
D
Bottom View
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
G
TC=100°C
Avalanche Current C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
C
V
ID
20
75
IAR
13
A
25
mJ
EAR
2.5
W
1.6
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
16.7
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
33.3
PDSM
Junction and Storage Temperature Range
Maximum Junction-to-Case B
±16
IDM
PD
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
25
Pulsed Drain Current C
Repetitive avalanche energy L=0.3mH
TC=25°C
Maximum
20
RθJA
RθJC
Typ
17
40
3.6
°C
Max
25
50
4.5
Units
°C/W
°C/W
°C/W
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AOD476
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250uA, VGS=0V
5
Gate-Body leakage current
VDS=0V, VGS=±16V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
0.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
75
VGS=10V, ID=20A
TJ=125°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current G
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qg(4.5V) Total Gate Charge
Gate Source Charge
nA
2
V
14
21
A
21
28
VGS=2.5V, ID=4A
57
79
VDS=5V, ID=20A
19
IS=1A, VGS=0V
0.77
VGS=10V, VDS=10V, ID=20A
mΩ
S
1
V
30
A
900
pF
162
pF
105
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
100
20
VGS=0V, VDS=10V, f=1MHz
uA
1.26
VGS=4.5V, ID=10A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
TJ=55°C
RDS(ON)
Max
20
VDS=16V, VGS=0V
IGSS
Coss
Typ
pF
0.9
1.35
Ω
15
18
nC
7.2
9
nC
1.8
nC
Qgd
Gate Drain Charge
2.8
nC
tD(on)
Turn-On DelayTime
4.5
ns
tr
Turn-On Rise Time
9.2
ns
tD(off)
Turn-Off DelayTime
18.7
ns
tf
trr
Turn-Off Fall Time
3.3
ns
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
18
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
9.5
ns
nC
VGS=10V, VDS=10V, RL=0.5Ω,
RGEN=3Ω
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
0
T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev2: Oct. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD476
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
100
10V
8V
80
6V
25°C
VDS=5V
25
125°C
-40°C
20
60
40
ID(A)
ID (A)
4.5V
3.5V
15
1.4
10
20
494
692
5
593
830
VGS=3V
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics
5
1
2
3
4
VGS(Volts)
Figure 2: Transfer Characteristics
193
18
1.60
80
5
VGS=10V, 20A
70
Normalized On-Resistance
VGS=2.5V
1.40
RDS(ON) (mΩ )
60
50
VGS=4.5V, 10A
1.20
40
VGS=4.5V
30
1.00
20
10
VGS=2.5V, 4A
0.80
VGS=10V
0
0
5
10
15
20
25
30
0.60
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-25
0
25
50
59
75
142
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
35
100
ID=20A
10
30
IS (A)
RDS(ON) (mΩ )
1
125°C
25
125°C
0.1
-40°C
0.01
20
25°C
25°C
0.001
15
0.0001
10
0.00001
3
4
5
6
7
8
9
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD476
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
10
1200
VDS=12.5V
ID=20A
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
1000
800
1.4
600
Coss
400
494
692
2
200
0
Crss
0
0
3
6
9
12
15
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
200
100µs
Power (W)
ID (Amps)
160
1ms
10
20
193
18
10µs
DC
593
830
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
120
80
1
40
TJ(Max)=175°C, TC=25°C
0
0.1
0.0001
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
59 0.1
1
10
Pulse 142
Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
0.01
0.00001
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOD476
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
tA =
30
40
L ⋅ ID
35
BV − VDD
Power Dissipation (W)
ID(A), Peak Avalanche Current
35
25
TA=25°C
20
15
30
25
20
1.4
15
494
692
10
5
10
0.000001
0
0.00001
0.0001
0.001
0
25
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
193
18
30
50
25
40
20
Power (W)
Current rating ID(A)
593
830
15
TA=25°C
30
20
10
10
5
0
0.01
0
0
25
50
75
100
125
150
175
0.1
1
59 10
142
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note B)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOD476
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
Vgs
Vgs
+ Vdd
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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