Datasheet

AOD480
30V N-Channel MOSFET
1.4
General Description
Features
VGStechnology
=10V, ID=18A
The AOD480 uses advanced trench
and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
VDS (V) = 30V
ID = 25A (VGS = 10V)
RDS(ON) <23 mΩ (VGS = 10V)
RDS(ON) <33 mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
TO-252
D-PAK
Bottom View
D
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Maximum
30
Units
V
VGS
±20
V
TC=25°C
Continuous Drain
TC=100°C
Current G
Pulsed Drain Current C
ID
25
18
A
IDM
64
Avalanche Current C
IAR
12
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR
7
mJ
Gate-Source Voltage
Power Dissipation B
TC=100°C
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Maximum Junction-to-Case
B
Alpha & Omega Semiconductor, Ltd.
2.5
W
1.6
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
11
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
21
PD
RθJA
RθJC
Typ
16.7
40
4.5
°C
Max
25
50
7
Units
°C/W
°C/W
°C/W
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AOD480
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
64
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
Rg
Gate resistance
100
nA
2.6
V
18.5
23
26
32
25.4
33
mΩ
1
V
3.2
A
A
373
VGS=0V, VDS=0V, f=1MHz
µA
2.1
20
VGS=0V, VDS=15V, f=1MHz
Units
V
0.75
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
1
5
VGS=4.5V, ID=8A
Output Capacitance
0.004
TJ=55°C
VGS=10V, ID=20A
Coss
Max
30
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
448
pF
67
pF
41
pF
2
2.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.7
7.1
8.6
nC
Qg(4.5V) Total Gate Charge
2.7
3.5
4.2
nC
VGS=10V, VDS=15V, ID=20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
8.4
10.5
12.6
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
3.6
4.5
5.4
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
1.2
nC
1.6
nC
4.3
ns
2.8
ns
15.8
ns
3
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current is limited by package.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev3: May. 2011
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD480
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
16
10V
50
6V
VDS=5V
12
4.5V
ID(A)
ID (A)
40
30
20
8
VGS=3.5V
125°C
4
10
25°C
0
0
0
1
2
3
4
5
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
35
1.8
Normalized On-Resistance
VGS=4.5V
30
RDS(ON) (mΩ
Ω)
2
25
20
VGS=10V
15
VGS=10V
ID=20A
1.6
1.4
VGS=4.5V
ID=8A
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
60
1.0E+01
ID=20A
1.0E+00
1.0E-01
40
IS (A)
RDS(ON) (mΩ
Ω)
50
125°C
125°C
1.0E-02
30
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
AS CRITICAL
25°C
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1.0E-04
25°C
FUNCTIONS AND RELIABILITY
WITHOUT NOTICE.
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
1.0E-05
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
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AOD480
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
10
Capacitance (pF)
VGS (Volts)
500
VDS=15V
ID=20A
8
6
4
2
Ciss
400
300
1.4
200
Coss
494
692
100
0
Crss
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
593
830
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
193
18
100
100
RDS(ON)
limited
10µs
ID (Amps)
10
100µs
DC
1ms
1
TJ(Max)=175°C
TC=25°C
Power (W)
80
TJ(Max)=175°C
TC=25°C
60
40
20
0
0.1
0.1
1
10
100
VDS (Volts)
0.0001
30
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
59 0.1
1
10
142Width (s)
Pulse
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=7°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOD480
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
Power Dissipation (W)
ID(A), Peak Avalanche Current
100
10
20
10
1
1
10
100
0
1000
0
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Power De-rating (Note B)
50
30
TA=25°C
40
20
Power (W)
Current rating ID(A)
175
30
20
10
10
0
0
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 14: Current De-rating (Note B)
175
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
100
1000
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AOD480
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
Vgs
Vgs
+ Vdd
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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