Datasheet

AOD496
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD496 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications.
-RoHS Compliant
-Halogen Free*
VDS (V) = 30V
ID = 62A (VGS = 10V)
RDS(ON) < 9.5mΩ (VGS = 10V)
RDS(ON) < 16mΩ (VGS = 4.5V)
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Top View
D
Bottom View
D
G
S
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current B
TC=100°C
Avalanche Current C
Power Dissipation B
C
Power Dissipation
Junction and Storage Temperature Range
Maximum Junction-to-Case C
V
ID
44
120
IAR
30
A
135
mJ
EAR
2.5
W
1.6
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
31
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
62.5
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
±20
IDM
PD
TC=100°C
TA=25°C
A
Units
V
62
Pulsed Drain Current
Repetitive avalanche energy L=0.3mH
TC=25°C
Maximum
30
RθJA
RθJC
Typ
15
41
2
°C
Max
20
50
2.4
Units
°C/W
°C/W
°C/W
AOD496
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
V
0.1
µA
1.9
2.5
V
7.7
9.5
A
11.0
13
VGS=0V, VDS=0V, f=1MHz
mΩ
16.0
mΩ
1.0
V
46
A
40
0.73
1000
VGS=0V, VDS=15V, f=1MHz
uA
5
VGS(th)
gFS
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=24V, VGS=0V
IGSS
RDS(ON)
Typ
S
1200
pF
340
pF
100
pF
Ω
1.3
2.0
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
18
23
Qg(4.5V) Total Gate Charge
8.5
nC
3.1
nC
4.8
nC
5.6
ns
5.5
ns
18.5
ns
VGS=10V, VDS=15V, ID=20A
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
5
ns
IF=20A, dI/dt=100A/µs
29
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
24
ns
nC
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1: Sep. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD496
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
30
10V
VDS=5V
25
7V
90
20
ID(A)
ID (A)
4.5V
60
4V
15
125°
10
30
25°C
5
VGS=3.5V
0
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Figure 1: On-Region Characteristics
3
3.5
4
1.6
Normalized On-Resistance
VGS=4.5V
13
RDS(ON) (mΩ )
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
15
11
9
VGS=10V
7
5
VGS=10V
1.4
ID=20A
1.2
VGS=4.5
V
VGS=4.5V
1
0.8
VGS=10V
0.6
0
5
10
15
20
25
30
-50
-20
10
40
70
100
130
160
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
1.0E+01
1.0E+00
25
ID=20A
125°C
1.0E-01
20
IS (A)
RDS(ON) (mΩ )
2
25°C
1.0E-02
125°C
15
1.0E-03
10
25°C
1.0E-04
1.0E-05
5
2
4
6
8
10
12
14
16
18
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AOD496
10
1500
8
1200
Capacitance (pF)
VGS (Volts)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
VDS=15V
ID=20A
6
4
2
Ciss
900
600
Coss
300
0
Crss
0
0
5
10
15
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000.0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
10µs
100µ
1m
1.0
DC
10ms
0.1
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
120
Power (W)
RDS(ON)
limited
10.0
TJ(Max)=175°C
TC=25°C
100
80
60
40
1
VDS (Volts)
10
100
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
20
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
10
Zθ JC Normalized Transient
Thermal Resistance
30
140
100.0
ID (Amps)
5
D=Ton/T
TJ,PK=TC+PDM.ZθJc.RθJc
RθJC=2.4°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOD496
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
TA=25°C
60
Power Dissipation (W)
ID(A), Peak Avalanche Current
200
160
120
80
40
50
40
30
20
10
0
0
0.000001
0.00001
0.0001
0.001
0
0.01
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
current derating
140
80
120
TJ(Max)=150°C
TA=25°C
100
60
Power (W)
Current rating ID(A)
25
40
80
60
40
20
20
0
0.001
0
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note B)
Zθ JA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
PD
Ton
T
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
100
1000
AOD490
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
Vgs
Vgs
+ Vdd
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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