Datasheet

AOD498
100V N-Channel MOSFET
General Description
Product Summary
The AOD498 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
100V
11A
RDS(ON) (at VGS=10V)
< 140mΩ
RDS(ON) (at VGS=4.5V)
< 152mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
Top View
D
Bottom View
D
D
S
G
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: August 2012
IAS
8
A
EAS
3
mJ
45
Steady-State
Steady-State
W
23
2.1
RθJA
RθJC
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
A
2
PDSM
TA=70°C
A
2.5
PD
TC=100°C
V
20
IDSM
TA=70°C
±20
8
IDM
TA=25°C
Continuous Drain
Current
Units
V
11
ID
TC=100°C
Maximum
100
-55 to 175
Typ
17
50
2.7
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°C
Max
25
60
3.3
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD498
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS,ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
TJ=55°C
±100
nA
1.7
2.3
V
116
140
227
274
VGS=4.5V, ID=3A
121
152
mΩ
15
1
V
11
A
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=4.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
A
0.76
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Units
µA
5
VGS=10V, ID=4.5A
Coss
Max
V
VDS=100V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=50V, f=1MHz
S
415
pF
31.5
pF
13
VGS=0V, VDS=0V, f=1MHz
pF
Ω
1.8
2.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
10
14
nC
Qg(4.5V) Total Gate Charge
5
7
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=50V, ID=4.5A
VGS=10V, VDS=50V, RL=11Ω,
RGEN=3Ω
0.9
mΩ
1.6
nC
1.9
nC
4.5
ns
3
ns
20
ns
tf
Turn-Off Fall Time
2.5
ns
trr
Body Diode Reverse Recovery Time
IF=4.5A, dI/dt=500A/µs
23
Qrr
Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs
100
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: August 2012
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Page 2 of 6
AOD498
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
VDS=5V
10V
4.5V
15
15
ID(A)
ID (A)
3.5V
10
10
3V
125°C
5
5
VGS=2.5V
25°C
0
0
0
1
2
3
4
1
5
140
3
4
5
Normalized On-Resistance
2.6
VGS=4.5V
130
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
120
110
VGS=10V
2.4
VGS=10V
ID=4.5A
2.2
2
17
5
2
VGS=4.5V
10
1.8
1.6
1.4
1.2
ID=3A
1
0.8
100
0
0
2
4
6
8
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
280
1.0E+02
ID=4.5A
260
1.0E+01
240
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
220
200
180
160
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
140
25°C
1.0E-04
120
1.0E-05
100
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: August 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOD498
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=50V
ID=4.5A
700
8
Capacitance (pF)
VGS (Volts)
600
6
4
500
Ciss
400
300
Coss
200
2
100
0
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
10
20 30 40 50 60 70 80
VDS (Volts)
Figure 8: Capacitance Characteristics
90
100
200
100.0
10µs10µs
1.0
Power (W)
100µs
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
160
10.0
ID (Amps)
Crss
1ms
10ms
DC
17
5
2
10
120
80
0.1
40
TJ(Max)=175°C
TC=25°C
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001
0.001
0.01
0.1
1
010
100
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=3.3°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: August 2012
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Page 4 of 6
AOD498
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
TA=100°C
TA=25°C
10
TA=150°C
TA=125°C
1
30
20
10
0
1
10
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
100
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
10000
12
TA=25°C
10
1000
8
Power (W)
Current rating ID(A)
40
6
17
5
2
10
100
4
10
2
1
0
0.00001
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10
1000
0
18
175
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: August 2012
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Page 5 of 6
AOD498
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: August 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6