Datasheet

AOD502
25V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Latest Trench Power MOSFET technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
ID (at VGS=10V)
25V
46A
RDS(ON) (at VGS=10V)
< 8mΩ
RDS(ON) (at VGS = 4.5V)
< 11.9mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
TO252
DPAK
D
TopView
Bottom View
D
D
S
D
G
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
V
36
A
15
IDSM
TA=70°C
±20
140
IDM
TA=25°C
Continuous Drain
Current
Units
V
46
ID
TC=100°C
Maximum
25
A
12
IAS
25
A
Avalanche energy L=0.1mH C
EAS
33
mJ
VDS Spike
VSPIKE
33
V
100ns
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
PD
TA=25°C
Rev 0: July 2012
2.5
Steady-State
Steady-State
RθJA
RθJC
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
W
25
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
50
-55 to 175
Typ
16
41
2.5
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°C
Max
20
50
3
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD502
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS,ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=20A
µA
5
1.6
0.7
Units
V
1
TJ=55°C
IGSS
Max
25
VDS=25V, VGS=0V
VGS(th)
Coss
Typ
2
100
nA
2.4
V
6
8
7.5
10
8.5
11.9
91
0.7
mΩ
mΩ
S
1
V
46
A
1187
pF
483
pF
60
pF
1.5
2.3
Ω
18
nC
8.8
nC
4.1
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
3.6
nC
tD(on)
Turn-On DelayTime
7.3
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
10.5
ns
21.8
ns
5
ns
14.7
ns
nC
24
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: July 2012
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Page 2 of 6
AOD502
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
4.5V
80
VDS=5V
80
7V
5V
4V
60
ID(A)
ID (A)
60
40
40
125°C
20
25°C
20
VGS=3.0V
0
0
0
1
2
3
4
0
5
12
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
2
3
4
5
6
1.6
10
VGS=4.5V
8
6
VGS=10V
4
2
VGS=10V
ID=20A
1.4
1.2
1
VGS=4.5V
ID=20A
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
15
1.0E+02
ID=20A
1.0E+01
12
40
1.0E+00
125°C
9
IS (A)
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
25°C
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
3
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: July 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOD502
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
VDS=15V
ID=20A
8
1400
Ciss
Capacitance (pF)
VGS (Volts)
1200
6
4
1000
800
600
Coss
400
2
200
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
300
1000.0
10µs
100.0
10.0
100µs
1ms
DC
1.0
Power (W)
10µs
RDS(ON)
ID (Amps)
Crss
0
200
17
5
TJ(Max)=150°C
2
TC=25°C
10
100
TJ(Max)=150°C
TC=25°C
0.1
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=T
/T
D=Ton
on/T
T
TJ,PK
=TCC+P
+PDM
.ZθJC
.RθJC
J,PK=T
DM.Z
θJC.R
θJC
1
16
12
R
RθJC
=3°C/W
θJC=3°C/W
InIndescending
descendingorder
order
D=0.5,
D=0.5,0.3,
0.3,0.1,
0.1,0.05,
0.05,0.02,
0.02,0.01,
0.01,single
singlepulse
pulse
0.1
Single Pulse
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: July 2012
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Page 4 of 6
AOD502
60
60
50
50
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
40
30
20
10
0
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
175
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
/T
D=T
on
TJ,PK=T
=TA+P
+PDM.Z
.ZθJA.R
.RθJA
T
J,PK
1
A
DM
θJA
descendingorder
order
InIndescending
D=0.5,0.3,
0.3,0.1,
0.1,0.05,
0.05,0.02,
0.02,0.01,
0.01,single
singlepulse
pulse
16 D=0.5,
12
θJA
RθJA=64°C/W
=50°C/W
R
θJA
0.1
0.01
Single
Pulse
Single
Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: July 2012
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Page 5 of 6
AOD502
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: July 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6