AOS Semiconductor Product Reliability Report AOD508, rev A 30V N-Channel AlphaMOS ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOD508. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOD508 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: General description: • Latest Trench Power MOSFET technology 30V • Very Low RDS(on) at 10V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application: • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial -RoHS Compliant -Halogen Free Details refer to the datasheet. II. Die / Package Information: AOD508 Standard sub-micron Low voltage N channel process Package Type TO252 Lead Frame Bare Cu Die Attach Soft solder Bond wire Al & Au wire Mold Material Epoxy resin with silica filler Moisture Level Up to Level 1 * Note * based on info provided by assembler and mold compound supplier Process 2 III. Result of Reliability Stress for AOD508 Test Item Test Condition Time Point MSL Precondition 168hr 85° c /85%RH +3 cycle reflow@260° c Temp = 150° c, Vgs=100% of Vgsmax - 168hrs 500 hrs 1000 hrs 1 lot Temp = 150° c, Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 1 lot HTGB Lot Attribution 9 lots Total Sample size Number of Failures Reference Standard 1210pcs 0 JESD22A113 77pcs 0 JESD22A108 0 JESD22A108 495pcs 0 JESD22A110 77 pcs / lot HTRB 77pcs 77 pcs / lot HAST Pressure Pot Temperature Cycle 130 +/- 2° c, 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121° c , 29.7psi, RH=100% 100 hrs 9 lots 96 hrs (Note A*) 5 lots 55 pcs / lot 275pcs 0 JESD22A102 -65° c to 150° c, air to air, 250 / 500 cycles (Note A*) 8 lots 55 pcs / lot 440pcs 0 JESD22A104 (Note A*) 55 pcs / lot Note A: The reliability data presents the available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 137 MTTF = 833 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion device hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 109 / [2x (2x77x168+6x77x1000) x (258)] = 137 9 6 MTTF = 10 / FIT = 7.30 x 10 hrs = 833 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C Tuse Af 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 3