Datasheet

AOD536
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
30V
46A
ID (at VGS=10V)
Applications
RDS(ON) (at VGS=10V)
< 8.5mΩ
RDS(ON) (at VGS=4.5V)
< 14.7mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
TO252
DPAK
D
TopView
Bottom View
D
D
S
G
D
G
S
G
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOD536
TO-252
Tape & Reel
2500
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentG
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current C
Avalanche energy
VDS Spike
L=0.1mH
C
10µs
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: July 2014
IAS
24
A
EAS
29
mJ
36
V
37.5
6.2
Steady-State
Steady-State
W
4
TJ, TSTG
Symbol
t ≤ 10s
W
18.5
PDSM
TA=70°C
A
16.5
PD
TC=100°C
A
20.5
VSPIKE
TC=25°C
V
127
IDSM
TA=70°C
±20
36
IDM
TA=25°C
Units
V
46
ID
TC=100°C
C
Maximum
30
RθJA
RθJC
-55 to 175
Typ
15
40
3.3
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°C
Max
20
50
4
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
gFS
Forward Transconductance
VDS=5V, ID=20A
1.4
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
VGS=4.5V, ID=20A
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
±100
nA
1.8
2.2
V
7
8.5
10
12
11.6
14.7
0.73
VGS=0V, VDS=15V, f=1MHz
mΩ
S
1
V
40
A
1140
pF
400
pF
45
pF
2.5
3.8
Ω
14
22
nC
Qg(4.5V) Total Gate Charge
6.5
12
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=15V, ID=20A
1.2
mΩ
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
f=1MHz
µA
42
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
V
5
VGS=10V, ID=20A
Static Drain-Source On-Resistance
Units
1
TJ=55°C
RDS(ON)
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
nC
3
nC
Gate Drain Charge
2.5
nC
Turn-On DelayTime
7
ns
13.5
ns
18.5
ns
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
4
ns
IF=20A, dI/dt=500A/µs
12
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
20
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: July 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
6V
80
VDS=5V
80
8V
4.5V
60
ID(A)
ID (A)
60
4V
40
40
3.5V
125°C
20
20
VGS=3V
25°C
0
0
0
1
2
3
4
0
5
1
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
16
Normalized On-Resistance
1.8
VGS=4.5V
12
RDS(ON) (mΩ)
2
8
VGS=10V
4
1.6
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
30
1.0E+02
ID=20A
1.0E+01
1.0E+00
20
125°C
IS (A)
RDS(ON) (mΩ)
25
125°C
15
1.0E-01
1.0E-02
10
1.0E-03
5
25°C
1.0E-04
25°C
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: July 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
VDS=15V
ID=20A
Ciss
1200
Capacitance (pF)
VGS (Volts)
8
6
4
2
900
600
Coss
300
Crss
0
0
0
3
6
9
12
15
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
500
1000.0
10µs 10µs
RDS(ON)
limited
10.0
100µs
DC
1ms
10ms
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
TJ(Max)=175°C
TC=25°C
400
Power (W)
100.0
ID (Amps)
10
300
200
100
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.0001
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=4°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: July 2014
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
60
Current rating ID(A)
Power Dissipation (W)
30
20
10
40
20
0
0
0
25
50
75
100
125
150
175
0
25
TCASE (°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
175
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: July 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: July 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6