Datasheet

AOD538/AOI538
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
30V
70A
ID (at VGS=10V)
Application
RDS(ON) (at VGS=10V)
< 3.1mΩ
RDS(ON) (at VGS=4.5V)
< 4.8mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
TO252
DPAK
TopView
TO-251A
IPAK
Top View
Bottom View
D
D
D
S
D
G
G
S
S
G
D
Bottom View
G
G
D
S
S
D
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOD538
AOI538
TO-252
TO-251A
Tape & Reel
Tube
2500
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy
L=0.1mH
VDS Spike
C
10µs
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: January 2014
IAS
36
A
EAS
65
mJ
VSPIKE
36
V
93
Steady-State
Steady-State
W
46
6.2
W
4
TJ, TSTG
Symbol
t ≤ 10s
A
27
PDSM
Junction and Storage Temperature Range
A
34
PD
TA=25°C
V
280
IDSM
TA=70°C
±20
54
IDM
TA=25°C
Continuous Drain
Current
Units
V
70
ID
TC=100°C
Maximum
30
RθJA
RθJC
-55 to 175
Typ
15
40
1.3
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°C
Max
20
50
1.6
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
1.4
±100
nA
1.8
2.2
V
2.5
3.1
3.6
4.5
4.8
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
3.8
gFS
Forward Transconductance
VDS=5V, ID=20A
91
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS=10V, ID=20A
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
VGS=0V, VDS=15V, f=1MHz
mΩ
mΩ
S
1
V
70
A
2160
pF
915
pF
115
pF
1.8
2.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
30
42
nC
Qg(4.5V) Total Gate Charge
14
20
nC
Qgs
Gate Source Charge
Qgd
tD(on)
f=1MHz
VGS=10V, VDS=15V, ID=20A
0.9
5.1
nC
Gate Drain Charge
6.3
nC
Turn-On DelayTime
8
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
5.5
ns
IF=20A, dI/dt=500A/µs
16.5
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
34.2
ns
nC
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
4
ns
29
ns
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: January 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
100
4.5V
VDS=5V
3.5V
80
60
60
ID(A)
ID (A)
80
40
125°C
40
3V
25°C
20
20
VGS=2.5V
0
0
0
1
2
3
4
0
5
1
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
6
1.8
Normalized On-Resistance
5
VGS=4.5V
RDS(ON) (mΩ
Ω)
2
4
3
2
VGS=10V
1
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
8
1.0E+02
ID=20A
1.0E+01
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
6
4
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
2
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: January 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=15V
ID=20A
2500
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
2000
1500
Coss
1000
2
500
0
Crss
0
0
10
20
30
40
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
500
10µs
RDS(ON)
limited
400
100µs
10.0
1ms
DC
10ms
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
TJ(Max)=175°C
TC=25°C
10µs
Power (W)
ID (Amps)
15
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
10
300
200
100
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.0001
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.6°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: January 2014
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Page 4 of 6
100
100
80
80
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
40
20
60
40
20
0
0
0
25
50
75
100
125
150
175
0
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
175
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Zθ JA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
Ton
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: January 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: January 2014
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6