AOS Semiconductor Product Reliability Report AOD5N40, rev B 400V, 4.2A N-channel MOSFET ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOD5N40. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOD5N40 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOD5N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. -RoHS Compliant -Halogen Free Details refer to the datasheet. II. Die / Package Information: AOD5N40 Standard sub-micron Middle voltage N channel process Package Type TO252 Lead Frame Bare Cu Die Attach Soft solder Bond wire Al wire Mold Material Epoxy resin with silica filler Moisture Level Up to Level 1 * Note * based on info provided by assembler and mold compound supplier Process 2 III. Result of Reliability Stress for AOD5N40 Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150°c , Vgs=100% of Vgsmax - HTGB HTRB HAST Pressure Pot Temperature Cycle Temp = 150°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 168hrs 500 hrs 1000 hrs Lot Attribution Total Sample size Number of Failures Reference Standard 15 lots 2739pcs 0 JESD22A113 2 lots 3 lots 4 lots (Note A*) 693pcs 0 JESD22A108 2 lots 3 lots 4 lots (Note A*) 693pcs 0 JESD22A108 660pcs 0 JESD22A110 0 JESD22A102 0 JESD22A104 77 pcs / lot 77 pcs / lot 130 +/- 2°c , 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121°c , 29.7psi, RH=100% 100 hrs 12 lots 96 hrs (Note A*) 12lots 55 pcs / lot 924pcs (Note A*) 77 pcs / lot -65°c to 150°c , air to air, 250 / 500 cycles 15 lots (Note A*) 1155pcs 77 pcs / lot Note A: The reliability data presents the available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 4 MTTF = 28929 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion device hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (4x77x168 +6x77x500 +8x77x168) x258)] = 4 9 8 MTTF = 10 / FIT = 2.53 x 10 hrs = 28929 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C Tuse Af 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 3