AOT270AL/AOB270AL 75V N-Channel MOSFET General Description Product Summary The AOT270AL/AOB270AL uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 75V 140A RDS(ON) (at VGS=10V) < 2.6mΩ (< 2.4mΩ ) RDS(ON) (at VGS=6V) < 3.2mΩ (< 3.0mΩ ∗) ∗ 100% UIS Tested 100% Rg Tested TO-263 TO220 Top View Bottom Top View D Bottom View D D D G D S S D D G G S G G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Avalanche Current C C Avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 Rev 0 : Dec. 2012 Steady-State Steady-State A IAS 120 A EAS 720 mJ 500 W 250 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s A 17 PDSM TA=70°C V 21.5 PD TC=100°C ±20 560 IDSM TA=70°C Units V 110 IDM TA=25°C Continuous Drain Current Maximum 75 140 ID TC=100°C C S S °C -55 to 175 Typ 12 50 0.25 www.aosmd.com Max 15 60 0.3 Units °C/W °C/W °C/W Page 1 of 6 AOT270AL/AOB270AL Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA 2.2 ID(ON) On state drain current VGS=10V, VDS=5V 560 VGS=10V, ID=20A TJ=125°C VGS=6V, ID=20A TO220 VGS=10V, ID=20A TO263 TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 2.7 3.3 V 2.15 2.6 3.25 4 2.55 3.2 1.95 2.4 3.0 3.8 2.35 3.0 A 0.66 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=37.5V, ID=20A Gate Source Charge 0.3 mΩ S 1 V 140 A 10830 VGS=0V, VDS=37.5V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 80 DYNAMIC PARAMETERS Ciss Input Capacitance Coss V 5 IGSS Static Drain-Source On-Resistance Units 1 TJ=55°C TO220 Max 75 VDS=75V, VGS=0V VGS(th) RDS(ON) Typ pF 1520 pF 97 pF 0.75 1.2 Ω 147 206 nC 38.5 nC Qgd Gate Drain Charge 30 nC tD(on) Turn-On DelayTime 30 ns tr Turn-On Rise Time 20 ns tD(off) Turn-Off DelayTime 66 ns tf Turn-Off Fall Time 18 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 53 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 438 ns nC VGS=10V, VDS=37.5V, RL=1.9Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package is 140A. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Dec. 2012 www.aosmd.com Page 2 of 6 AOT270AL/AOB270AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 4.5V 80 80 6V 60 ID(A) ID (A) 60 40 40 125°C 4V 20 25°C 20 Vgs=3.5V 0 0 0 1 2 3 4 5 2 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 5 Normalized On-Resistance 2 6 RDS(ON) (mΩ Ω) 2.5 4 VGS=6V 2 VGS=10V 0 1.8 VGS=10V ID=20A 1.6 1.4 1.2 VGS=6V ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 5 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 ID=20A 1.0E+01 4 125°C IS (A) RDS(ON) (mΩ Ω) 1.0E+00 3 125°C 1.0E-01 25°C 1.0E-02 2 25°C 1.0E-03 1 1.0E-04 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : Dec. 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT270AL/AOB270AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 12000 VDS=37.5V ID=20A 10000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 8000 6000 Coss 4000 Crss 2000 0 0 0 30 60 90 120 Qg (nC) Figure 7: Gate-Charge Characteristics 150 0 25 50 VDS (Volts) Figure 8: Capacitance Characteristics 5000 1000.0 TJ(Max)=175°C TC=25°C 10µs RDS(ON) limited 10µs 100µs 10.0 DC 1.0 4000 1ms 10ms Power (W) 100.0 ID (Amps) 75 TJ(Max)=175°C TC=25°C 0.1 17 5 2 10 3000 2000 1000 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 40 RθJC=0.3°C/W PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : Dec. 2012 www.aosmd.com Page 4 of 6 AOT270AL/AOB270AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 TA=100°C TA=25°C 100 500 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=150°C TA=125°C 400 300 200 100 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 150 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 10000 TA=25°C 1000 Power (W) Current rating ID(A) 120 90 60 100 10 30 0 1 0 Zθ JA Normalized Transient Thermal Resistance 10 1 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 175 0.001 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 0.1 0.01 PD 0.001 Ton T Single Pulse 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : Dec. 2012 www.aosmd.com Page 5 of 6 AOT270AL/AOB270AL Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0 : Dec. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6