Datasheet

AOT288L/AOB288L/AOTF288L
80V N-Channel MOSFET
General Description
Product Summary
The AOT288L & AOB288L & AOTF288L uses trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Both conduction and switching power losses are
minimized due to an extremely low combination of RDS(ON),
Ciss and Coss.This device is ideal for boost converters
and synchronous rectifiers for consumer, telecom,
industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
80V
46A / 43A
RDS(ON) (at VGS=10V)
< 9.2mΩ(< 8.9mΩ*)
RDS(ON) (at VGS=6V)
<12.5mΩ(< 12.2mΩ*)
100% UIS Tested
100% Rg Tested
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
G
G
AOT288L
D
S
AOTF288L
G
D
AOB288L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT288L/AOB288L
VDS
Drain-Source Voltage
80
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
* Surface mount package TO263
Rev 0 : Dec. 2012
Steady-State
Steady-State
A
A
IAS
35
A
EAS
61
mJ
93.5
35.5
46.5
17.5
2.1
TJ, TSTG
RθJA
RθJC
-55 to 175
AOT288L/AOB288L
15
60
1.6
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W
W
1.3
Symbol
t ≤ 10s
30
8
PDSM
Junction and Storage Temperature Range
V
10.5
PD
TA=25°C
Units
V
160
IDSM
TA=70°C
AOTF288L
43
36
IDM
TA=25°C
Continuous Drain
Current
S
G
±20
46
ID
TC=100°C
C
S
S
°C
AOTF288L
15
60
4.2
Units
°C/W
°C/W
°C/W
Page 1 of 7
AOT288L/AOB288L/AOTF288L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS，ID=250µA
2.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
160
VGS=10V, ID=20A
TJ=125°C
VGS=6V, ID=20A
TO220/TO220F
VGS=10V, ID=20A
TO263
gFS
Forward Transconductance
VGS=6V, ID=20A
TO263
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
nA
3.4
V
7.6
9.2
12.6
15.2
9.5
12.5
mΩ
7.3
8.9
mΩ
9.2
12.2
mΩ
A
VGS=10V, VDS=40V, ID=20A
0.6
mΩ
S
1
V
46
A
1871
pF
265
pF
14
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qgs
±100
2.8
0.71
VGS=0V, VDS=40V, f=1MHz
Output Capacitance
µA
50
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
V
5
IGSS
TO220/TO220F
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
80
VDS=80V, VGS=0V
VGS(th)
RDS(ON)
Typ
pF
1.3
2
Ω
26.5
38
nC
8.5
nC
Gate Drain Charge
4
nC
Turn-On DelayTime
11.5
ns
8.5
ns
21.5
ns
5.5
ns
ns
nC
VGS=10V, VDS=40V, RL=2Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
32
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
162
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2012
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Page 2 of 7
AOT288L/AOB288L/AOTF288L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
6V
VDS=5V
80
80
8V
5V
60
ID(A)
ID (A)
60
40
40
4.5V
20
20
125°C
Vgs=4V
25°C
0
0
0
1
2
3
4
1
5
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
12
2.4
Normalized On-Resistance
VGS=6V
10
RDS(ON) (mΩ
Ω)
2
8
VGS=10V
6
4
VGS=10V
ID=20A
2
1.6
17
5
2
VGS=6V
ID=20A 10
1.2
0.8
0.4
2
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
25
1.0E+02
ID=20A
1.0E+01
20
40
1.0E+00
15
IS (A)
RDS(ON) (mΩ
Ω)
125°C
10
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
5
1.0E-04
1.0E-05
0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Dec. 2012
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AOT288L/AOB288L/AOTF288L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=40V
ID=20A
Ciss
2000
Capacitance (pF)
VGS (Volts)
8
6
4
2
1500
Coss
1000
500
Crss
0
0
0
5
10
15
20
25
30
0
20
30
40
50
60
70
80
1000
1000.0
10µs
10µs
100.0
10.0
DC
100µs
1ms
10ms
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
TJ(Max)=175°C
TC=25°C
800
Power (W)
RDS(ON)
ID (Amps)
10
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
17
5
2
10
600
400
200
10
100
0
0.0001 0.001
1000
0.01
0.1
1
10
100
1000
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT288L and AOB288L (Note F)
for AOT288L and AOB288L (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.6°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT288L and AOB288L (Note F)
Rev 0 : Dec. 2012
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Page 4 of 7
AOT288L/AOB288L/AOTF288L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
1000.0
100.0
10µs
RDS(ON)
100µs
10.0
Power (W)
ID (Amps)
TJ(Max)=175°C
TC=25°C
250
1ms
10ms
1.0
TJ(Max)=175°C
TC=25°C
0.1
DC
200
150
100
50
0.0
0.01
0.1
1
10
100
0
0.0001 0.001
1000
VDS (Volts)
0.01
0.1
1
10
100
1000
17
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-Case
5
for AOTF288L (Note F)
Figure 12: Maximum Forward Biased
Safe Operating Area for AOTF288L
2
10
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=4.2°C/W
1
0
18
0.1
PD
Single Pulse
0.01
1E-05
0.0001
0.001
Ton
0.01
0.1
40
1
10
T
100
1000
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF288L (Note F)
Rev 0 : Dec. 2012
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Page 5 of 7
AOT288L/AOB288L/AOTF288L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
100
TA=100°C
TA=150°C
TA=125°C
10
1
80
60
40
20
0
1
10
100
1000
0
25
Time in avalanche, tA (µ
µs)
Figure 15: Single Pulse Avalanche capability
(Note C)
50
75
100
125
150
175
TCASE (°
°C)
Figure 16: Power De-rating (Note F)
1000
50
TA=25°C
100
Power (W)
Current rating ID(A)
40
30
20
17
5
2
10
10
10
0
0
25
50
75
100
125
150
175
TCASE (°
°C)
Figure 17: Current De-rating (Note F)
1
0.001
0.01
0.1
1
10
0100
1000
18
Pulse Width (s)
Figure 18: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 19: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Dec. 2012
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Page 6 of 7
AOT288L/AOB288L/AOTF288L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0 : Dec. 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7