datasheet

SK50GH065F
$ - ./ 01 Absolute Maximum Ratings
Symbol Conditions
IGBT
,2+
$3 - ./ 0
%
$3 - 6./ 0
%:;
455
,
/7
8
$ - 95 0
75
8
655
8
< .5
,
$3 - 6./ 0
65
A
$ - ./ 0
9.
8
$ - 95 0
/5
8
6.5
8
%:;- . %
, - =55 ,> ,&2 ? .5 ,>
,2+ @ 455 ,
Units
$ - ./ 0
,&2+
SEMITOP® 3
Values
Inverse Diode
IGBT Module
%'
%':;
SK50GH065F
$3 - 6/5 0
%':;- . %'
Module
%:;+
Target Data
$*3
B75 CCC D6/5
0
$
B75 CCC D6./
0
./55
,
,
Features
! "#$ %&$
$ '(
) *
) Typical Applications*
+
%*
+
!#+
Remarks
,' - * *
8
81 6 C
$ - ./ 01 Characteristics
Symbol Conditions
IGBT
,&2
,&2 - ,21 % - 51E 8
%2+
,&2 - 455 ,1 ,2 - ,2+
$3 - ./ 0
%&2+
,2 - 5 ,1 ,&2 - .5 ,
$3 - ./ 0
,25
2
,2
,&2 - 6/ ,
% - 45 81 ,&2 - 6/ ,
,2 - ./1 ,&2 - 5 ,
:& - 6/ G
I - 6.55 8IA
:& - 6/ G
I - 6.55 8IA
2
:3B
typ.
max.
Units
=
7
/
,
5155..
8
6.5
8
$3 - ./ 0
61.
61=
,
$3 - 6./ 0
616
51F
,
$3 - ./0
6.
G
$3 - 6./0
..
G
,
$3 - ./0
*C
.
.1/
$3 - 6./0
*C
.1.
.1E
- 6 ;H
=1.
51=
'
'
5169
'
615E
J
2
min.
, - =55,
%- 458
$3 - 6./ 0
,&2-<6/,
61E4
%&$
,
J
519/
KI(
GH
1
25-08-2009 DIL
© by SEMIKRON
SK50GH065F
Characteristics
Symbol Conditions
Inverse Diode
,' - ,2
%' - 45 8> ,&2 - 5 ,
min.
$3 - ./ 0
*C
typ.
max.
Units
616
614
,
61.
,
$3 - 6./ 0
*C
SEMITOP® 3
IGBT Module
,'5
$3 - 6/5 0
519/
,
'
$3 - 6/5 0
6.
G
$3 - 6./ 0
75
=
8
A
517.
J
%::;
L
%' - 75 8
I - 6.55 8IA
2
,-=55,
:3B ;
M
.1./
=5
616
KI(
.1/
"
SK50GH065F
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Target Data
Features
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
! "#$ %&$
$ '(
) *
) Typical Applications*
+
%*
+
!#+
Remarks
,' - * *
GH
2
25-08-2009 DIL
© by SEMIKRON
SK50GH065F
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
25-08-2009 DIL
© by SEMIKRON
SK50GH065F
Fig. 7 Typ. switching times vs. IC
4
Fig. 8 Typ. switching times vs. gate resistor RG
25-08-2009 DIL
© by SEMIKRON
SK50GH065F
UL recognized file
no. E 63 532
$6F + 1 #1 N .
$6F
5
&
25-08-2009 DIL
© by SEMIKRON