datasheet

SK75GD126T
6 #5 7*" &
Absolute Maximum Ratings
Symbol Conditions
IGBT
2*
8 6 #5 7*
*
8 6 !5: 7*
*=
SEMITOP 4
IGBT Module
!#::
2
44
+
6 ;: 7*
<;
+
!0:
+
> #:
2
8 6 !#5 7*
!:
B
6 #5 7*
C!
+
6 ;: 7*
<4
+
!5:
+
*=6 # ' *
Preliminary Data
2* A !#:: 2
Inverse Diode
=
SK75GD126T
2** 6 <:: 2? 2( @ #: 2?
8 6 !5: 7*
=6 # ' Module
D=E
+
%8
F0: 333 G!5:
7*
F0: 333 G!#5
7*
#5::
2
2
+*" ! 3
Features
Characteristics
Symbol Conditions
IGBT
% &
2(DE
2( 6 2*" * 6 $ +
*
2( 6 : 2" 2* 6 2*
(
2* 6 : 2" 2( 6 #: 2
!"#"$
' () *+, -.
/* Typical Applications*
%
0# 12+
3 !4"5 1-
Units
6 #5 7*
2(
®
Values
6 #5 7*" &
min.
typ.
5
5"4
8 6 #5 7*
max.
<"5
2
:"::C0
+
8 6 !#5 7*
+
8 6 #5 7*
!#::
8 6 !#5 7*
2*:
*
2*DE
*
*
2( 6 !5 2
* 6 ;5 +" 2( 6 !5 2
2* 6 #5" 2( 6 : 2
=( 6 4"# H
K 6 !$0: +KB
=(&& 6 4"# H
K 6 !$0: +KB
&&
=D8FE
()
+
+
8 6 #5 7*
!
!"#
8 6 !#5 7*
:"C
!"!
2
8 6 #57*
!:
!$
H
8 6 !#57*
!<
!C
H
8 6 #57*%3
!";
#"!
2
8 6 !#57*%3
#
#"0
& 6 ! IJ
*
DE
D&&E
&
Units
2** 6 <::2
*6 ;5+
8 6 !#5 7*
2(6 F;KG!5 2
2
2
5
:"#<
:"#$
<#
$#
!!"$
5!0
C:
L
!:
L
:"5
MK-
GD-T
1
27-08-2008 DIL
© by SEMIKRON
SK75GD126T
Characteristics
Symbol Conditions
Inverse Diode
2 6 2*
6 ;5 +? 2( 6 : 2
2:
®
SEMITOP 4
IGBT Module
==
N
6 ;5 +
K 6 !$0: +KB
2**6 <::2
=D8FE.
1
SK75GD126T
min.
8 6 #5 7*%3
typ.
max.
Units
!"0<
2
8 6 !#5 7*%3
!"0
2
8 6 #5 7*
!":5
2
8 6 !#5 7*
:"C5
2
8 6 #5 7*
5"5
H
8 6 !#5 7*
<
H
8 6 !#5 7*
;:
#:
+
B*
<
L
:";
MK-
#"5
#";5
/
<:
0C$>5O
H
Temperature sensor
=!::
6!::7* D=#5651HE
Preliminary Data
Features
!"#"$
% &
' () *+, -.
/* This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Typical Applications*
%
0# 12+
3 !4"5 1-
GD-T
2
27-08-2008 DIL
© by SEMIKRON
SK75GD126T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
27-08-2008 DIL
© by SEMIKRON
SK75GD126T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
27-08-2008 DIL
© by SEMIKRON
SK75GD126T
UL recognized file
no. E 63 532
* ;0 D &
P #3 &
P $"< E
* ;0
5
(.F
27-08-2008 DIL
© by SEMIKRON