datasheet

SK50GB12T4T
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Absolute Maximum Ratings
Symbol Conditions
IGBT
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Values
Inverse Diode
IGBT Module
SK50GB12T4T
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1
23-03-2016 MS
© by SEMIKRON
SK50GB12T4T
Characteristics
Symbol Conditions
Inverse Diode
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®
SEMITOP 3
IGBT Module
SK50GB12T4T
min.
typ.
max.
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Remarks
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GB-T
2
23-03-2016 MS
© by SEMIKRON
SK50GB12T4T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
23-03-2016 MS
© by SEMIKRON
SK50GB12T4T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
23-03-2016 MS
© by SEMIKRON
SK50GB12T4T
! 26 >- !
,
# ! #! #N )?
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1,
chapter IX.
! 26
5
@
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of
product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products
describe only the usual characteristics of products to be expected in typical applications, which
may still vary depending on the specific application. Therefore, products must be tested for the
respective application in advance. Application adjustments may be necessary. The user of
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regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a
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23-03-2016 MS
© by SEMIKRON
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