datasheet

SKM50GB063D
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 150 °C
600
V
Tc = 25 °C
70
A
Tc = 75 °C
51
A
50
A
ICnom
ICRM
SEMITRANS® 2
Superfast NPT-IGBT
Modules
ICRM = 2xICnom
100
A
-20 ... 20
V
10
µs
-55 ... 150
°C
Tc = 25 °C
75
A
Tc = 80 °C
45
A
50
A
100
A
-40 ... 150
°C
VGES
tpsc
VCC = 300 V
VGE ≤ 20 V
VCES ≤ 600 V
Tj = 125 °C
Tj
Inverse diode
IF
SKM50GB063D
IFnom
Target Data
IFRM
IFRM = 2xIFnom
Features
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
• NPT = non punch-through
IGBT technology
• High short circuit capability, self
limiting to 6 x IC
• Pos. temp.-coeff. of VCEsat
• Isolated copper baseplate
A
Module
It(RMS)
Tterminal < 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
200
A
-40 ... 125
°C
2500
V
Characteristics
Typical Applications*
• Switched mode power supplies
• UPS
• Three phase inverters for servo / AC
motor speed control
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
2.1
2.5
V
Tj = 125 °C
2.4
2.8
V
VCE0
Tj = 25 °C
1.05
1.3
V
Tj = 125 °C
1
1.2
V
rCE
Tj = 25 °C
21.0
24.0
mΩ
28.0
32.0
mΩ
5.5
6.5
V
Tj = 25 °C
0.1
0.3
mA
f = 1 MHz
2.2
IGBT
VCE(sat)
IC = 50 A
VGE = 15 V
chiplevel
VGE = 15 V
VGE(th)
VGE=VCE, IC = 1 mA
ICES
VGE = 0 V
VCE = 600 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 20 V
RGint
Tj = 25 °C
VCC = 300 V
IC = 50 A
VGE = ±15 V
RG on = 22 Ω
RG off = 22 Ω
td(on)
tr
Eon
Tj = 125 °C
4.5
mA
nF
f = 1 MHz
f = 1 MHz
nF
0.2
nF
nC
Ω
Tj = 125 °C
50
ns
Tj = 125 °C
40
ns
Tj = 125 °C
2.5
mJ
Tj = 125 °C
300
ns
tf
Tj = 125 °C
30
ns
Eoff
Tj = 125 °C
1.8
mJ
td(off)
Rth(j-c)
per IGBT
0.5
K/W
GB
© by SEMIKRON
Rev. 2 – 22.04.2010
1
SKM50GB063D
Characteristics
Symbol
SEMITRANS® 2
rF
IRRM
Qrr
Superfast NPT-IGBT
Modules
Conditions
Inverse diode
VF = VEC IF = 50 A
VGE = 0 V
chip
VF0
Err
Rth(j-c)
IF = 50 A
di/dtoff = 50 A/µs
VGE = ±15 V
VCC = 300 V
per diode
min.
typ.
max.
Unit
Tj = 25 °C
1.35
1.60
V
Tj = 125 °C
1.35
1.60
V
Tj = 25 °C
1.05
1.2
V
Tj = 125 °C
0.9
1
V
Tj = 25 °C
6.0
8.0
mΩ
Tj = 125 °C
9.0
12.0
mΩ
Tj = 125 °C
31
A
Tj = 125 °C
3.2
µC
Tj = 125 °C
0.48
mJ
1
K/W
Module
SKM50GB063D
LCE
RCC'+EE'
Target Data
Features
• NPT = non punch-through
IGBT technology
• High short circuit capability, self
limiting to 6 x IC
• Pos. temp.-coeff. of VCEsat
• Isolated copper baseplate
30
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
nH
TC = 25 °C
0.65
mΩ
TC = 125 °C
1
mΩ
0.04
to terminals M5
0.05
K/W
3
5
Nm
2.5
5
Nm
Nm
w
160
g
Typical Applications*
• Switched mode power supplies
• UPS
• Three phase inverters for servo / AC
motor speed control
GB
2
Rev. 2 – 22.04.2010
© by SEMIKRON
SKM50GB063D
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2 – 22.04.2010
3
SKM50GB063D
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 2 – 22.04.2010
© by SEMIKRON
SKM50GB063D
SEMITRANS 2
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 2 – 22.04.2010
5
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