datasheet

SKM 200GB176D
.& / %
Absolute Maximum Ratings
Symbol Conditions
IGBT
0 .& /
#
0 2&) /
2'))
.!)
$
3) /
23)
$
6))
$
8 .)
2)
<
.& /
.2)
$
3) /
2>)
$
6))
$
0 2&) /
22))
$
.& /
.2)
$
3) /
2>)
$
6))
$
22))
$
&))
$
0
( >) ,,, ? 2&)
/
(>),,,?2.&
/
>)))
#45."#
7
Trench IGBT Modules
2.)) 9 7 : .) 9 0 2.& /
; 2')) Inverse Diode
#=
0 2&) /
#=45
#=45."#=
SKM 200GB176D
#=5
2) 9 ,
SKM 200GAL176D
Freewheeling Diode
Features
! " #
Typical Applications*
$ % &'& (
'&) $
* +" ,-
#=
0 2&) /
#=45
#=45."#=
#=5
2) 9 ,
0 2&) /
Module
#+45-
$ 2 ,
.& / %
Characteristics
Symbol Conditions
IGBT
7+-
7 # ! $
#
7 ) )
+
7 2& max.
Units
&.
&3
!>
6
$
2
2.
0 2.& /
)@
22
0 .&/
!'
36
A
0 2.&/
2)
2.
A
.
. >&
0 2.&/,
.>
.@
2 5B
22 >
) &&
=
=
) >>
=
C7
7 (3,,,?2&
2.))
47
0 .& /
> .&
D
6!)
>&
@6
'!)
2>)
E
&3
E
%+
%+
47
& A
47 & A
4+0(-
1
typ.
0 .& /
#
2&) $ 7 2& 0 .&/,
.& 7 ) min.
0 .& /
GB
Units
.& /
#45
SEMITRANS® 3
Values
#7F
2.))
# 2&)$
0 2.& /
7 8 2&
) 2.
GHI
GAL
28-06-2010 GIL
© by SEMIKRON
SKM 200GB176D
Characteristics
Symbol Conditions
Inverse Diode
= #=
2&) $9 7 ) =)
=
®
SEMITRANS 3
Trench IGBT Modules
#445
C
#= 2&) $
%H% 6')) $H<
7 (2& 9 2.)) 4+0(-J
%%
min.
typ.
max.
Units
0 .& /,
2'
2@
0 2.& /,
2'
2@
0 .& /
22
26
0 2.& /
)@
22
0 .& /
>
>
A
0 2.& /
&6
&6
A
0 2.& /
2@&
&.
$
<
62
E
) .&
GHI
FWD
SKM 200GB176D
SKM 200GAL176D
= #=
2&) $9 7 ) =)
=
Features
! " #
#445
C
#= 2&) $
%H% 6')) $H<
7 (2& 9 2.)) 4+0(-=J
%%
2'
2@
0 2.& /,
2'
2@
0 .& /
22
26
0 2.& /
)@
22
0 .& /
>
>
0 2.& /
&6
&6
0 2.& /
2@&
&.
$
<
62
E
) .&
GHI
Module
K
4L?L
2&
, (
Typical Applications*
$ % &'& (
4+(-
%
5
M 5!
5
5!
'&) $
* +" ,-
0 .& /,
.)
.& /
) 6&
A
2.& /
)&
A
) )63
GHI
6
&
N
.&
&
N
6.&
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
GB
2
GAL
28-06-2010 GIL
© by SEMIKRON
SKM 200GB176D
SEMITRANS® 3
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
4
4
4
4
2
.
6
>
2
.
6
3)
6)
3.
23
) )'&6
) )2
) )))3
MHI
MHI
MHI
MHI
>
) )))6
4
4
4
4
2
.
6
>
2
.
6
2!)
!'
.)
6
) )63.
) ))@
) )))@
MHI
MHI
MHI
MHI
>
) ))&
Zth(j-c)D
Trench IGBT Modules
SKM 200GB176D
SKM 200GAL176D
Features
! " #
Typical Applications*
$ % &'& (
'&) $
* +" ,-
GB
3
GAL
28-06-2010 GIL
© by SEMIKRON
SKM 200GB176D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
28-06-2010 GIL
© by SEMIKRON
SKM 200GB176D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 Typ. CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode reverse recovery charge
5
28-06-2010 GIL
© by SEMIKRON
SKM 200GB176D
UL Recognized
File no. E 63 532
J &!
7F
6
J &!
7$K
J &'
28-06-2010 GIL
© by SEMIKRON