datasheet

SKM 195GB066D
Absolute Maximum Ratings
Symbol Conditions
IGBT
0 ,- .
&
0 +9- .
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8 <2 /// C +9-
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8 <2 /// C +,-
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SEMITRANS® 2
Trench IGBT Modules
SKM195GB066D
>$2 ? 5 1 +- ?
@ $22 Inverse Diode
&B
0 +9- .
&B4;
&B4;,%&B
&B;
+2 ? /
0 +9- .
Module
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0
Features
!!
"#
! $ % &
Typical Applications*
' (
)*
(
Remarks
( +,-. %/#
( / ( !
0 1+-2.
(3 ) ! ! 45
6
7 ! 8 (
" (/
Units
,- .
5
Values
'# + /
Characteristics
Symbol Conditions
IGBT
5
5 # & >#, '
&
5 2 # 2
5 +- ,-.# !(
min.
typ.
max.
Units
-
-#:
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0 ,- .
2#D
+
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408
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,
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LJM
GB
1
22-03-2011 GIL
© by SEMIKRON
SKM 195GB066D
Characteristics
Symbol Conditions
Inverse Diode
B &B
,22 '? 5 2 B2
B
SEMITRANS® 2
Trench IGBT Modules
SKM195GB066D
&44;
G
&B ,22 '
(J( ,222 'JA
5 8: ? >22 408N
((
!!
"#
! $ % &
Typical Applications*
' (
)*
(
Remarks
( typ.
max.
Units
0 ,- ./
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+#$
0 ,- .
2#D-
+
0 ,- .
,#>
>
E
0 +-2 .
+22
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A
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I
2#<
LJM
Module
O
4PCP
>2
/# 8
,- .
2#9-
E
+,- .
+
E
48
(
2#2-
LJM
;
7 ;$
>
-
Q
;
;-
,#-
-
Q
+-2
Features
min.
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
+,-. %/#
( / ( !
0 1+-2.
(3 ) ! ! 45
6
7 ! 8 (
" (/
GB
2
22-03-2011 GIL
© by SEMIKRON
SKM 195GB066D
®
SEMITRANS 2
Trench IGBT Modules
SKM195GB066D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
4
4
4
4
+
,
>
<
+
,
>
+$2
<+
+$
>
2#2,9$
2#2<2$
2#22+
7JM
7JM
7JM
7JM
<
2#22++
4
4
4
4
+
,
>
<
+
,
>
,-2
++2
>2#2-<
2#2+,
2#22+-
7JM
7JM
7JM
7JM
<
2#2229
Zth(j-c)D
Features
!!
"#
! $ % &
Typical Applications*
' (
)*
(
Remarks
( +,-. %/#
( / ( !
0 1+-2.
(3 ) ! ! 45
6
7 ! 8 (
" (/
GB
3
22-03-2011 GIL
© by SEMIKRON
SKM 195GB066D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
22-03-2011 GIL
© by SEMIKRON
SKM 195GB066D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovered charge
5
22-03-2011 GIL
© by SEMIKRON
SKM 195GB066D
UL recognized, file no. E 63 532
N $+
5K
6
N $+
22-03-2011 GIL
© by SEMIKRON
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